Abstract:
A method of refreshing a dynamic random access memory (DRAM) includes detecting an open page of the DRAM at a row of a DRAM bank within an open sub-array of the DRAM bank. The method also includes delaying issuance of a refresh command to a target refresh row of the DRAM bank when the target refresh row of the DRAM bank is within the open sub-array of the DRAM bank.
Abstract:
Errors can be introduced when data is transferred over a link between two entities such as between a host and a memory. Link error protection schemes can be implemented to detect and correct errors that occur on the link to enhance transmission reliability. However, these benefits are not without costs since such protection schemes increase both latency and power consumption. In one or more aspects, it is proposed to dynamically adjust the level of link error protection applied to match any change in the operating environment. For example, likelihood of link errors strongly correlates with the link speed. If the link speed is increased, a greater level of link error protection can be applied to counteract the increase in the link errors. If the link speed is decreased, the level of protection can be decreased so that latency and power consumption penalties can be minimized.
Abstract:
A memory having a redundancy area is operated in a normal mode and an error is detected. A selecting selects between in-line repair process and off-line repair. In-line repair applies a short term error correction, which remaps a fail address to a remapped memory area of the memory. An in-system repair is applied, for a one-time programmed remapping of the fail address to a redundancy area of the memory. In-system repair utilizes idle time of the memory to maintain valid memory content.
Abstract:
Errors can be introduced when data is transferred over a link between two entities such as between a host and a memory. Link error protection schemes can be implemented to detect and correct errors that occur on the link to enhance transmission reliability. However, these benefits are not without costs since such protection schemes increase both latency and power consumption. In one or more aspects, it is proposed to dynamically adjust the level of link error protection applied to match any change in the operating environment. For example, likelihood of link errors strongly correlates with the link speed. If the link speed is increased, a greater level of link error protection can be applied to counteract the increase in the link errors. If the link speed is decreased, the level of protection can be decreased so that latency and power consumption penalties can be minimized.
Abstract:
Methods and systems for an in-system repair process that repairs or attempts to repair random bit failures in a memory device are provided. In some examples, an in-system repair process may select alternative steps depending on whether the failure is correctable or uncorrectable. In these examples, the process uses communications between a system on chip and the memory to fix the failures during normal operation.
Abstract:
Disclosed are techniques for generating a parity check matrix representing an error correcting code (ECC) for protecting a plurality of bits of a message. In an aspect, a method includes initializing a matrix M to store selected three-bit codes, selecting a first three-bit code from a set L of three-bit combinations of a number of bits n of the ECC that minimizes a sum of squared row weights of each row of the matrix M, comparing the first three-bit code with each of a plurality of error syndromes, and calculating, based on no comparison of the first three-bit code with each of the plurality of error syndromes, new error syndromes and storing the new error syndromes, wherein the new error syndromes are calculated by comparing the first three-bit code with each three-bit code in the matrix M, and storing the first three-bit code in the matrix M.
Abstract:
In a repair of a random access memory (RAM), an error information is received, a fail address of the RAM identified, and a one-time programming applied to a portion of the redundancy circuit while a content of the RAM is valid. Optionally, the RAM is a dynamic access RAM (DRAM), a refresh burst is applied to the DRAM, followed by a non-refresh interval, and the one-time programming is performed during the non-refresh interval.
Abstract:
Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.