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    High speed uplink packet access adaptive retransmission method and apparatus
    7.
    发明授权
    High speed uplink packet access adaptive retransmission method and apparatus 有权
    高速上行分组接入自适应重传方法及装置

    公开(公告)号：US08902918B2

    公开(公告)日：2014-12-02

    申请号：US13449967

    申请日：2012-04-18

    申请人： Xin Huang ,  Dingzhang Dai ,  Hongwei Wang ,  Fangfu Guo

    发明人： Xin Huang ,  Dingzhang Dai ,  Hongwei Wang ,  Fangfu Guo

    IPC分类号： H04J3/16 ,  H04J3/22 ,  H04L1/18 ,  H04L1/00

    CPC分类号： H04L1/1825 ,  H04L1/0015 ,  H04L1/1883

    摘要： An embodiment of the present invention discloses a high speed uplink packet access adaptive retransmission method and apparatus. The method includes: obtaining a resource limitation state; performing adjustment decision according to the resource limitation state and a current target number of retransmissions of a UE; and adjusting the target number of retransmissions of the UE between a preset large target number of retransmissions and a preset small target number of retransmissions, where the large target number of retransmissions is greater than the small target number of retransmissions. The utilization rate of resources may be effectively improved.

    摘要翻译： 本发明的实施例公开了一种高速上行分组接入自适应重传方法和装置。 该方法包括：获取资源限制状态; 根据资源限制状态和UE的当前目标重传次数进行调整决定; 以及在预设的大目标重发次数与预定的小目标重发次数之间调整所述UE的目标重传次数，其中所述大目标重发次数大于所述小目标重传次数。 资源利用率可以有效提高。

    Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer
    9.
    发明授权
    Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
    ATM和ATR / CHEK1作为癌症预后指标的遗传变化

    公开(公告)号：US08722325B2

    公开(公告)日：2014-05-13

    申请号：US13480358

    申请日：2012-05-24

    申请人： Susanne M. Gollin ,  Rahul Atul Parikh ,  Xin Huang

    发明人： Susanne M. Gollin ,  Rahul Atul Parikh ,  Xin Huang

    IPC分类号： C12Q1/68

    CPC分类号： C12Q1/6886 ,  G01N33/5091 ,  G01N33/57484

    摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.

    摘要翻译： 本发明涉及这样的发现：在人类癌症中，ATM的11q缺失与ATR和CHEK1表达的增加一起与电离辐射的抗性相关，可以通过抑制ATR / CHEK1途径来克服。 它提供了鉴定不太可能对可能受益于ATR / CHEK1途径抑制的放射治疗和/或化学疗法表现出足够反应的患者的方法，以及治疗所述患者的方法。

    Heat dissipation structure of SOI field effect transistor
    10.
    发明授权
    Heat dissipation structure of SOI field effect transistor 有权
    SOI场效应晶体管的散热结构

    公开(公告)号：US08598636B2

    公开(公告)日：2013-12-03

    申请号：US13582624

    申请日：2011-08-17

    申请人： Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

    发明人： Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

    IPC分类号： H01L29/80

    CPC分类号： H01L23/38 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the source terminal is applied a high potential with respect to the source terminal, and a metal wire for the P-type material in the vicinity of the source terminal is applied a lower potential with respect to the source terminal. By way of a Peltier effect, in the present invention heat can be absorbed at a contact portion between the thermoelectric material and the source/drain, and at the same time dissipated at a connection portion between the thermoelectric material and a bottom electrode metal, so that the heat generated in an active region of the device is effectively transferred to the substrate and dissipated through a heat sink.

    摘要翻译： 本发明公开了一种具有肖特基源极/漏极的SOI场效应晶体管的散热结构，涉及微电子领域。 散热结构包括与漏极端子或者源极端子和漏极端子连接的两个孔，其分别填充有高热电系数的N型材料和具有高热电系数的P型材料。 在漏极端子附近，用于具有高热电系数的N型材料的金属线相对于漏极端子施加高电位，并且用于具有高热电系数的P型材料的金属线 漏极端子相对于漏极端子施加低电位。 在源极端子附近具有高热电系数的N型材料的金属线相对于源极端子施加高电位，并且在源极端子附近的用于P型材料的金属线是 相对于源极端子施加较低的电位。 通过珀耳帖效应，在本发明中，热量可以在热电材料和源极/漏极之间的接触部分处被吸收，并且同时在热电材料和底部电极金属之间的连接部分消散，因此 在器件的有源区域中产生的热量有效地传递到衬底并通过散热器散发。