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公开(公告)号：US09379232B2
公开(公告)日：2016-06-28
申请号：US14182521
申请日：2014-02-18
IPC分类号： H01L21/02 , H01L29/78 , H01L29/66 , H01L29/51 , G11C11/56 , H01F10/00 , G11C11/16 , B82Y10/00 , H01L29/16 , H01F10/32
CPC分类号： H01L29/78 , B82Y10/00 , G11C11/161 , G11C11/5607 , H01F10/002 , H01F10/3268 , H01L29/1606 , H01L29/517 , H01L29/66984
摘要： The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
摘要翻译： 本发明涉及一种包括氧化铬的栅极膜和可以是石墨烯，InP，GaAs，GaSb，PbS，MoS2，WS2，MoSe2，WSe2的导电沟道材料的薄膜及其混合物的磁电自旋FET。 氧化铬或其他磁电和导电通道材料沿其间的界面紧密接触。 所得到的磁电设备可以是电压控制的并且提供非易失性存储器。
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公开(公告)号：US20140231888A1
公开(公告)日：2014-08-21
申请号：US14182521
申请日：2014-02-18
CPC分类号： H01L29/78 , B82Y10/00 , G11C11/161 , G11C11/5607 , H01F10/002 , H01F10/3268 , H01L29/1606 , H01L29/517 , H01L29/66984
摘要： The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
摘要翻译： 本发明涉及一种包括氧化铬的栅极膜和可以是石墨烯，InP，GaAs，GaSb，PbS，MoS2，WS2，MoSe2，WSe2的导电沟道材料的薄膜及其混合物的磁电自旋FET。 氧化铬或其他磁电和导电通道材料沿其间的界面紧密接触。 所得到的磁电设备可以是电压控制的并且提供非易失性存储器。
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