摘要:
A method and apparatus for detecting whether dynamic logic circuits are precharging properly. The method and apparatus uses a narrowed reset pulse to verify precharging is occurring as designed.
摘要:
An on-chip test circuit for evaluating on-chip signals for a semiconductor memory chip includes an on-chip signal associated with a memory circuit on the chip; said on-chip signal having a signal characteristic to be evaluated; an input circuit for receiving an off-chip test signal; and a test circuit that compares said on-chip signal and said test signal.
摘要:
A method and system for testing multiported memories, especially when one or more of the ports are not directly accessible without intervening logic. The method and system segregates the multiported memory into at least two portions which are then used for testing the one or more ports which are not directly accessible.
摘要:
A built-in self-test (BIST) apparatus and method for testing an integrated circuit are disclosed which enable capture of failure data for a selected failure. The BIST apparatus comprises a clock generator, which generates at least a first clock signal, and a built-in self-tester, which applies predetermined input data patterns to the integrated circuit in response to the first clock signal. In addition, the BIST apparatus includes a data comparator for comparing output data received from the integrated circuit with expected output data. The data comparator detects a failure within the integrated circuit when the output data received from the integrated circuit differs from the expected output data. The BIST apparatus further includes a clock controller that disables the first clock signal in response to the detection of a selected occurrence of a failure. By enabling testing of the integrated circuit to be halted upon the occurrence of a selected failure, failure analysis of the integrated circuit is enhanced.
摘要:
A method for testing memory cells for data retention faults is disclosed. A first logical value is stored in a first cell, and a second logical value is stored in a second cell of a memory device. The second cell shares the same column with the first cell. The bitlines associated with the first and second cells are prevented from being precharged before the second cell can be read. After the second cell has been read repeatedly, the first cell is read, and the bitlines associated with the first and second cells are precharged. At this point, a data retention fault is determined to have occurred if the first cell does not contain the first logical value.
摘要:
The high speed greater than or equal to compare circuit comprises an equal to compare circuit having M number of exclusive-OR gates input into a NOR gate, each exclusive-OR gate N of the M number of exclusive-OR gates receiving as inputs a Nth bit of a first digital number having M bits and a corresponding Nth bit of a second digital number having M bits, wherein 1
摘要:
A built-in self test system (124) and method for two-dimensional memory redundancy allocation. The built-in self test system is adapted to allocate two redundant columns (116) and one redundant row (120) to an embedded memory (104) as needed to repair single cell failures (SCFs) within the rows (108) and columns of the memory. The self-test system includes a left-priority encoder (136), a right-priority encoder (140), and a greater-than-two detector (144). The left-priority encoder encodes the location of the first SCF most proximate the most-significant bit of the corresponding word. The right-priority encoder encodes the location of the first SCF most proximate the least-significant bit of the corresponding word. The greater-than-two detector determines whether a word contains more than two SCFs. If the greater-than-two detector detects that a word contains more than two SCFs, the built-in self test system identifies the corresponding row as being a must-fix row, since the number of SCFs exceeds the number of redundant columns.
摘要:
A finite state machine (FSM) is used to generate, in real time, potentially long sequences of signals which control generation of signals for application to a memory structure during a self-test procedure which is provided in hardware on the same chip with the memory structure. The FSM-based instruction generator requires much less area than is required for storage of a corresponding number of microcode instructions and allows the built-in self-test (BIST) controller to have a modular architecture permitting re-use of hardware designs for the BIST arrangement with consequent reduction of elimination of design costs of the BIST arrangement to accommodate new memory designs. The sequential nature of the operation of a finite state machine as it progresses through a desired sequence of states is particularly well-suited to controlling capture of signals where access to high. speed data transfer circuits cannot otherwise be accommodated.
摘要:
A method and system for testing multiported memories, especially when one or more of the ports are not directly accessible without intervening logic. The method and system segregates the multiported memory into at least two portions which are then used for testing the one or more ports which are not directly accessible.
摘要:
A memory logic built-in self-test (“BIST”) includes slow speed controller-to-collar signals, while allowing collars to test memories at full speed. A controller is configured to include control features and address, data, read/write, output evaluation, and redundancy calculation values are configured within the collars. The controller is further configured to handle scheduling of the collars and diagnostics interfacing. In addition, the collars are configured to allow BIST testing to be run serially, in parallel, or in groups. Collars are also configured to send diagnostic results back to the controller based on the initialization of the respective collars, thus providing a central interface for the diagnostics results.