公开(公告)号：US20180138122A1

公开(公告)日：2018-05-17

申请号：US15855510

申请日：2017-12-27

Applicant: Renesas Electronics Corporation

Inventor： Eisuke KODAMA

IPC: H01L23/525 ,  H01L21/02 ,  H01L23/532 ,  H01L21/82 ,  H01L27/06

CPC classification number: H01L23/5258 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/32132 ,  H01L21/82 ,  H01L23/53295 ,  H01L27/0641

Abstract: As means for preventing a leakage of a fuse element cut by laser trimming due to a conductive residue or the like, an insulating film which has a high thermal conductivity and a relatively low adhesion is formed between an element isolation region and the fuse element in the case of forming the fuse element on the element isolation region in a groove on a main surface of an epitaxial substrate. When the fuse element is cut by performing the laser trimming, both of a part of the fuse element and the insulating film below the part of the fuse element are removed.

公开(公告)号：US20180090480A1

公开(公告)日：2018-03-29

申请号：US15658688

申请日：2017-07-25

Applicant: Renesas Electronics Corporation

Inventor： Eisuke KODAMA

IPC: H01L27/02 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L27/0259 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/417 ,  H01L29/41708 ,  H01L29/861

Abstract: An electrostatic protection element whose electrostatic breakdown resistance can be adjusted with a required minimum design change is provided.A semiconductor device includes an electrostatic protection element including a bipolar transistor whose base region and emitter region are electrically coupled together through a resistance region. At this time, the base region of the electrostatic protection element has a side including a facing portion that faces the collector region. The facing portion of the side includes an exposed portion that is exposed from an emitter wiring in plan view and a covered portion that is covered by the emitter wiring in plan view.

公开(公告)号：US20200294985A1

公开(公告)日：2020-09-17

申请号：US16813442

申请日：2020-03-09

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eisuke KODAMA

IPC: H01L27/01 ,  H01L49/02 ,  H01L21/265 ,  H01L21/225 ,  H01L21/324 ,  H01L21/70

Abstract: A semiconductor device includes a semiconductor substrate SUB, a semiconductor layer EP formed on the semiconductor substrate SUB, a buried layer PBL formed between the semiconductor layer EP and the semiconductor substrate SUB, an isolation layer PiSO formed in the semiconductor layer EP so as to be in contact with the buried layer PBL, and a conductive film FG formed over the isolation layer PiSO via an insulating film IF, whereby a first capacitive element including the conductive film FG as an upper electrode, the insulating film IF as a capacitive insulating film, and the isolation layer PiSO as a lower electrode, is formed over the semiconductor substrate SUB.

公开(公告)号：US20190371881A1

公开(公告)日：2019-12-05

申请号：US16407916

申请日：2019-05-09

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eisuke KODAMA

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324

Abstract: A semiconductor device capable of lowering a temperature coefficient and increasing a sheet resistance value (ps value) and a manufacturing method thereof are provided. The resistive layer RL is made of polycrystalline silicon containing boron. The concentration distribution of boron in the thickness direction of the resistive layer RL includes a concentration peak PC and a low concentration portion LC having a concentration of boron lower than the concentration of boron in the concentration peak PC by two orders of magnitude or more.

公开(公告)号：US20170005036A1

公开(公告)日：2017-01-05

申请号：US14894178

申请日：2014-11-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eisuke KODAMA

IPC: H01L23/525

CPC classification number: H01L23/5258 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/32132 ,  H01L21/82 ,  H01L23/53295 ,  H01L27/0641

Abstract: As means for preventing a leakage of a fuse element cut by laser trimming due to a conductive residue or the like, an insulating film which has a high thermal conductivity and a relatively low adhesion is formed between an element isolation region and the fuse element in the case of forming the fuse element on the element isolation region in a groove on a main surface of an epitaxial substrate. When the fuse element is cut by performing the laser trimming, both of a part of the fuse element and the insulating film below the part of the fuse element are removed.

Abstract translation: 作为用于防止由于导电残渣等导致的由激光修整而切断的熔丝元件的泄漏的手段，在元件隔离区域和熔断元件之间形成具有高导热性和较低粘附性的绝缘膜 在外延衬底的主表面上的沟槽中的元件隔离区上形成熔丝元件的情况。 当通过执行激光修整来切割熔丝元件时，熔断元件的一部分和熔丝元件部分下面的绝缘膜都被去除。

公开(公告)号：US20240030131A1

公开(公告)日：2024-01-25

申请号：US18333033

申请日：2023-06-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Eisuke KODAMA ,  Tohru KAWAI

IPC: H01L23/525 ,  H01L23/532

CPC classification number: H01L23/5256 ,  H01L23/53271 ,  H01L23/53209

Abstract: An electric fuse including a fuse body and a fuse pad has a lamination structure of a polysilicon film and a cobalt silicide film. In the fuse body, a first portion having a first thickness and a second portion having a second thickness are formed. The first thickness is smaller than the second thickness. The polysilicon film is formed such that a thickness of the polysilicon film in the first portion becomes smaller than a thickness of the polysilicon film in the second portion.

公开(公告)号：US20180076191A1

公开(公告)日：2018-03-15

申请号：US15635441

申请日：2017-06-28

Applicant: Renesas Electronics Corporation

Inventor： Eisuke KODAMA

IPC: H01L27/02 ,  H01L27/06 ,  H01L23/535

CPC classification number: H01L27/0248 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/067 ,  H01L27/0772

Abstract: In a semiconductor device including a resistance element, an electrostatic protection element, including a parasitic bipolar transistor having the resistance element as a component, is provided. That is, instead of providing a dedicated electrostatic protection element in a semiconductor device, a function as an electrostatic protection element is also achieved by using a resistance element provided in a semiconductor device.