Current detection circuit and DCDC converter including the same

    公开(公告)号:US10256725B2

    公开(公告)日:2019-04-09

    申请号:US15461687

    申请日:2017-03-17

    Inventor: Hideyuki Tajima

    Abstract: According to an embodiment, a current detection circuit includes a transistor, an operational amplifier, and a transistor. In the transistor, the source and the gate are coupled to the source and the gate of a transistor which is provided on a high side of a drive circuit. The operational amplifier amplifies a potential difference between a drain voltage of the transistor and a drain voltage of the transistor. The transistor is provided over a current path through which a current flowing to the transistor flows, and which has the gate to which an output voltage of the operational amplifier is supplied. A value of the current flowing through the transistor is detected based on a value of the current flowing through the transistor.

    Semiconductor device
    2.
    发明授权

    公开(公告)号:US12218579B2

    公开(公告)日:2025-02-04

    申请号:US18145328

    申请日:2022-12-22

    Inventor: Hideyuki Tajima

    Abstract: A semiconductor device includes: a constant current generating circuit unit; a first current mirror circuit unit having a constant current as an input current and generating a first mirror current as a mirror current; a level shift circuit unit including a clamp transistor between whose drain and source a first mirror current flows and to whose base a power supply voltage of the constant current generating circuit unit is applied, and a transistor that is connected in series to the clamp transistor and through which the first mirror current flows; a second current mirror circuit unit having as an input stage a transistor and having as an output stage a transistor through which a second mirror current replicating the first mirror current flows; and an error absorption circuit unit connected to a terminal for outputting the second mirror current of the output-stage transistor in the second current mirror circuit unit.

    Current detection circuit, semiconductor device, and semiconductor system

    公开(公告)号:US11385266B2

    公开(公告)日:2022-07-12

    申请号:US16820178

    申请日:2020-03-16

    Abstract: The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy. According to one embodiment, the current detection circuit 12 comprises a sense transistor Tr11 through which a first sense current proportional to the current flowing through the drive transistor MN1 flows, an operational amplifier AMP1 for amplifying the potential difference of the voltage of the external output terminal OUT and the source voltage of the sense transistor Tr11 for outputting the first sense current, a transistor Tr12 provided in series with the sense transistor Tr11 and to which the output voltage of the operational amplifier AMP1 is applied to the gate, and a switch SW3 provided between the external output terminal OUT and the source of the sense transistor Tr11 and turned on when the drive transistor MN1 is turned off.

    Semiconductor device, load drive system and method of detecting inductor current

    公开(公告)号:US10855266B2

    公开(公告)日:2020-12-01

    申请号:US16223969

    申请日:2018-12-18

    Inventor: Hideyuki Tajima

    Abstract: A monitor circuit monitors a gate potential applied to a gate of a high-side transistor or monitors an output potential generated at an output terminal and generates either one or both of a high-side sampling timing and a high-side holding timing based on the monitored result. A current detection circuit detects an inductor current flowing in an inductor and generates a first detection voltage proportional to the inductor current. A sample-and-hold circuit starts a sampling operation of the first detection voltage in response to the high-side sampling timing and starts a holding operation of the first detection voltage in response to the high-side holding timing so as to output a second detection voltage.

    Semiconductor device
    6.
    发明授权

    公开(公告)号:US11171086B2

    公开(公告)日:2021-11-09

    申请号:US16700485

    申请日:2019-12-02

    Abstract: A semiconductor device includes a base member, a multilayer wiring layer, and a first resistive element. The multilayer wiring layer is formed on the base member. The first resistive element is formed in the multilayer wiring layer. The first resistive element includes a first conductive part, a second conductive part and a third conductive part. The second conductive part is formed over the first conductive part. The third conductive part electrically connects the first conductive part and the second conductive part with each other. A length of the third conductive part in a first direction along a surface of the base member is greater than a length of the third conductive part in a second direction along the surface of the base member and perpendicular to the first direction.

    Semiconductor device and control method thereof

    公开(公告)号:US09654006B2

    公开(公告)日:2017-05-16

    申请号:US14991399

    申请日:2016-01-08

    Inventor: Hideyuki Tajima

    CPC classification number: H02M3/158 H02M3/1582 H02M2001/0025

    Abstract: According to one embodiment, a DC-DC converter 1 includes a power supply unit 12 that includes an inductor L1 and a switching unit and generates an output voltage Vout corresponding to a duty of a pulse signal P1, a PID controller 111 that outputs a control signal S corresponding to a difference between a divided voltage of Vout and a target voltage Vcnst, a PI controller 112 that outputs a control signal D corresponding to a difference between the control signal S and an average current flowing through the inductor L1, a PWM generation unit 113 that generates the pulse signal P1 with a duty ratio corresponding to the control signal D, and in step-down mode, the PI controller 112 performs proportional control of the differential signal ei by using a product of the control signal D and a reference proportionality constant KP as a proportionality constant.

    SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF 有权
    半导体器件及其控制方法

    公开(公告)号:US20160248325A1

    公开(公告)日:2016-08-25

    申请号:US14991399

    申请日:2016-01-08

    Inventor: Hideyuki Tajima

    CPC classification number: H02M3/158 H02M3/1582 H02M2001/0025

    Abstract: According to one embodiment, a DC-DC converter 1 includes a power supply unit 12 that includes an inductor L1 and a switching unit and generates an output voltage Vout corresponding to a duty of a pulse signal P1, a PID controller 111 that outputs a control signal S corresponding to a difference between a divided voltage of Vout and a target voltage Vcnst, a PI controller 112 that outputs a control signal D corresponding to a difference between the control signal S and an average current flowing through the inductor L1, a PWM generation unit 113 that generates the pulse signal P1 with a duty ratio corresponding to the control signal D, and in step-down mode, the PI controller 112 performs proportional control of the differential signal ei by using a product of the control signal D and a reference proportionality constant KP as a proportionality constant.

    Abstract translation: 根据一个实施例,DC-DC转换器1包括电源单元12,其包括电感器L1和开关单元,并且产生与脉冲信号P1的占空比相对应的输出电压Vout; PID控制器111,其输出控制 对应于Vout的分压和目标电压Vcnst之间的差的信号S,输出与控制信号S和流经电感器L1的平均电流之间的差对应的控制信号D的PI控制器112,PWM生成 单元113,其以与控制信号D相对应的占空比生成脉冲信号P1,并且在降压模式下,PI控制器112通过使用控制信号D和参考的乘积对差分信号ei进行比例控制 比例常数KP作为比例常数。

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