公开(公告)号：US20210231508A1

公开(公告)日：2021-07-29

申请号：US17232902

申请日：2021-04-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masanori IKEDA ,  Tadashi KAMEYAMA

IPC: G01K13/00 ,  G01K7/01 ,  G01K15/00 ,  G01R21/133

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

公开(公告)号：US20170315001A1

公开(公告)日：2017-11-02

申请号：US15473979

申请日：2017-03-30

Applicant: Renesas Electronics Corporation

Inventor： Masanori IKEDA ,  Tadashi KAMEYAMA

IPC: G01K13/00 ,  G01R21/133

CPC classification number: G01K13/00 ,  G01K7/01 ,  G01K15/005 ,  G01R21/133

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

公开(公告)号：US20220113357A1

公开(公告)日：2022-04-14

申请号：US17559091

申请日：2021-12-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

公开(公告)号：US20200209075A1

公开(公告)日：2020-07-02

申请号：US16687308

申请日：2019-11-18

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA

IPC: G01K15/00 ,  G01K7/01 ,  G06F1/20

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.

公开(公告)号：US20210333333A1

公开(公告)日：2021-10-28

申请号：US16855814

申请日：2020-04-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.