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公开(公告)号：US20230369257A1
公开(公告)日：2023-11-16
申请号：US17743033
申请日：2022-05-12
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Yoshikazu TANAKA , Tadashi KAMEYAMA , Takafumi BETSUI
CPC classification number: H01L23/66 , H01P3/081 , H01L2223/6627 , H01L2223/6638
Abstract: A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board. The wiring board includes a first and a second signal transmission line and a reference potential plane. The first and the second signal transmission line is formed in a first conductive layer and connected to the differential signal terminal pair. The reference potential plane includes a conductive pattern formed in a different conductive layer from the first conductive layer. The conductive pattern includes a first and a second region overlapped with the first and the second signal transmission line in plan view, respectively. The conductive pattern has a plurality of openings in the first and the second region. An area of a first conductive portion of the reference potential plane in the first region becomes equal to an area of a second conductive portion of the reference potential plane in the second region.
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公开(公告)号：US20230376058A1
公开(公告)日：2023-11-23
申请号：US17748770
申请日：2022-05-19
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Yusuke AIHARA , Kuniyasu TAJIMA , Naoyuki HAMANISHI , Tadashi KAMEYAMA
CPC classification number: G05F1/46 , H01P3/081 , H01L23/66 , H01L2223/6627
Abstract: A semiconductor device includes a receiving terminal for receiving a signal transmitted through a signal transmission line, a reference plane voltage terminal connected to a refence plane as a refence for the signal on the signal transmission line and a voltage generating circuit configured to generate a refence plane voltage to be supplied to the reference plane voltage terminal based on the signal received by the receiving terminal.
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公开(公告)号：US20210333333A1
公开(公告)日：2021-10-28
申请号：US16855814
申请日：2020-04-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi KAMEYAMA , Masanori IKEDA , Masataka MINAMI , Kenichi SHIMADA , Yukitoshi TSUBOI
IPC: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US20240094064A1
公开(公告)日：2024-03-21
申请号：US18353255
申请日：2023-07-17
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi KAMEYAMA , Fumiki KAWAKAMI , Tetsuhiro KOYAMA , Masataka MINAMI
CPC classification number: G01K13/00 , G01K7/16 , G01K2219/00
Abstract: Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ΔVref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ΔVptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.
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Patent Agency Ranking
公开(公告)号：US20220113357A1
公开(公告)日：2022-04-14
申请号：US17559091
申请日：2021-12-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi KAMEYAMA , Masanori IKEDA , Masataka MINAMI , Kenichi SHIMADA , Yukitoshi TSUBOI
IPC: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US20200209075A1
公开(公告)日：2020-07-02
申请号：US16687308
申请日：2019-11-18
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi KAMEYAMA , Masanori IKEDA
Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.
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公开(公告)号：US20210231508A1
公开(公告)日：2021-07-29
申请号：US17232902
申请日：2021-04-16
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Masanori IKEDA , Tadashi KAMEYAMA
IPC: G01K13/00 , G01K7/01 , G01K15/00 , G01R21/133
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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公开(公告)号：US20170315001A1
公开(公告)日：2017-11-02
申请号：US15473979
申请日：2017-03-30
Applicant: Renesas Electronics Corporation
Inventor： Masanori IKEDA , Tadashi KAMEYAMA
IPC: G01K13/00 , G01R21/133
CPC classification number: G01K13/00 , G01K7/01 , G01K15/005 , G01R21/133
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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公开(公告)号：US20160282202A1
公开(公告)日：2016-09-29
申请号：US15177396
申请日：2016-06-09
Applicant: Renesas Electronics Corporation
Inventor： Tadashi KAMEYAMA , Takanobu NARUSE , Takayasu ITO
Abstract: To suppress an increase in the number of voltage comparators with an expansion in a chip temperature detection range, a temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage obtained by the reference voltage generating circuit with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range. It is possible to expand the chip temperature detection range by changing the correspondence between the chip temperature detection signal and the chip temperature, without increasing the number of voltage comparators.
Abstract translation: 为了抑制芯片温度检测范围扩大的电压比较器的数量的增加，半导体器件中的温度传感器包括：温度检测电路，用于根据芯片温度输出电压;基准电压产生电路，用于产生 多个参考电压，以及多个电压比较器，用于将由参考电压产生电路获得的每个参考电压与温度检测电路的输出电压进行比较，从而生成配置有多个位的芯片温度检测信号。 此外，温度传感器包括控制电路，用于基于芯片温度检测信号来控制由基准电压产生电路产生的参考电压，从而改变芯片温度检测信号和芯片温度之间的对应关系，以移动芯片温度检测范围。 通过改变芯片温度检测信号和芯片温度之间的对应关系，可以扩大芯片温度检测范围，而不增加电压比较器的数量。
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