公开(公告)号：US20210333333A1

公开(公告)日：2021-10-28

申请号：US16855814

申请日：2020-04-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

公开(公告)号：US20180128689A1

公开(公告)日：2018-05-10

申请号：US15861819

申请日：2018-01-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shigeki OBAYASHI ,  Hiroki SHIMANO ,  Masataka MINAMI ,  Hiroji OZAKI

IPC: G01K7/01

CPC classification number: G01K7/01

Abstract: To provide a signal generation circuit having a short settling time of an output voltage. In a PTAT signal generation circuit, a trimming circuit is coupled between the cathodes of 0-th to K-th diodes and a line of a ground voltage, the anode of the 0-th diode is coupled to a first node, the anodes of the first to the K-th diodes are coupled to a second node via a resistive element, the first node and the second node are set to the same voltage, a first current flowing through the 0-th diode and a second current flowing through the first to the K-th diodes are set to have the same value, and a third current flowing through the trimming circuit is set to have the value 2 times that of each of the first current and the second current.

公开(公告)号：US20150063419A1

公开(公告)日：2015-03-05

申请号：US14459356

申请日：2014-08-14

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shigeki OBAYASHI ,  Hiroki SHIMANO ,  Masataka MINAMI ,  Hiroji OZAKI

IPC: G05F1/46 ,  G01K7/00

CPC classification number: G01K7/01

Abstract: To provide a signal generation circuit having a short settling time of an output voltage. In a PTAT signal generation circuit, a trimming circuit is coupled between the cathodes of 0-th to K-th diodes and a line of a ground voltage, the anode of the 0-th diode is coupled to a first node, the anodes of the first to the K-th diodes are coupled to a second node via a resistive element, the first node and the second node are set to the same voltage, a first current flowing through the 0-th diode and a second current flowing through the first to the K-th diodes are set to have the same value, and a third current flowing through the trimming circuit is set to have the value 2 times that of each of the first current and the second current.

Abstract translation: 提供具有输出电压的稳定时间短的信号发生电路。 在PTAT信号发生电路中，微调电路耦合在第0至第K个二极管的阴极和接地电压之间，第0个二极管的阳极耦合到第一节点，阳极 第一到第K个二极管经由电阻元件耦合到第二节点，第一节点和第二节点被设置为相同的电压，流过第0个二极管的第一电流和流过第0个二极管的第二电流 首先将第K个二极管设定为具有相同的值，并且流过修整电路的第三电流被设置为具有第一电流和第二电流中的每一个的值的2倍的值。

公开(公告)号：US20180073935A1

公开(公告)日：2018-03-15

申请号：US15818357

申请日：2017-11-20

Applicant: Renesas Electronics Corporation

Inventor： Naoya ARISAKA ,  Masataka MINAMI ,  Takahiro MIKI

IPC: G01K7/01 ,  H03K21/38 ,  H03K21/00

CPC classification number: G01K7/01 ,  G01K2217/00 ,  G01K2219/00 ,  H03K21/00 ,  H03K21/38

Abstract: A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.

公开(公告)号：US20240094064A1

公开(公告)日：2024-03-21

申请号：US18353255

申请日：2023-07-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Fumiki KAWAKAMI ,  Tetsuhiro KOYAMA ,  Masataka MINAMI

IPC: G01K13/00 ,  G01K7/16

CPC classification number: G01K13/00 ,  G01K7/16 ,  G01K2219/00

Abstract: Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ΔVref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ΔVptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

公开(公告)号：US20220113357A1

公开(公告)日：2022-04-14

申请号：US17559091

申请日：2021-12-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

公开(公告)号：US20160187204A1

公开(公告)日：2016-06-30

申请号：US14928856

申请日：2015-10-30

Applicant: Renesas Electronics Corporation

Inventor： Naoya ARISAKA ,  Masataka MINAMI ,  Takahiro MIKI

IPC: G01K7/01 ,  H03K21/00

CPC classification number: G01K7/01 ,  G01K2217/00 ,  G01K2219/00 ,  H03K21/00 ,  H03K21/38

Abstract: The present invention provides a semiconductor device having a sensor capable of improving precision while suppressing increase in occupation area. A semiconductor device has: a first counter; and a second counter (time measuring circuit) measuring time until a count value, which is obtained by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the first counter. The first counter obtains a piece of digital information corresponding to the first voltage on the basis of a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, on the basis of the time measured by the time measuring circuit.

Abstract translation: 本发明提供一种具有能够在抑制占用面积增加的同时提高精度的传感器的半导体装置。 半导体器件具有：第一计数器; 并且通过对具有对应于第一电压的频率的第一信号进行计数而得到的计数值的第二计数器（时间测量电路）达到可以由第一计数器计数的最大计数值。 第一计数器基于通过对与具有与第一电压不同的第二电压的频率的第二信号进行计数而获得的计数值，基于时间来获得与第一电压对应的数字信息 由时间测量电路测量。