公开(公告)号：US20220113357A1

公开(公告)日：2022-04-14

申请号：US17559091

申请日：2021-12-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

公开(公告)号：US20210333333A1

公开(公告)日：2021-10-28

申请号：US16855814

申请日：2020-04-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadashi KAMEYAMA ,  Masanori IKEDA ,  Masataka MINAMI ,  Kenichi SHIMADA ,  Yukitoshi TSUBOI

IPC: G01R31/40

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

公开(公告)号：US20210294691A1

公开(公告)日：2021-09-23

申请号：US16821915

申请日：2020-03-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Katsushige MATSUBARA ,  Ryoji HASHIMOTO ,  Takahiro IRITA ,  Kenichi SHIMADA ,  Tetsuya SHIBAYAMA

IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F9/30

Abstract: In a data processing device comprising a memory controller controlling writing/reading of data to/from the memory, a processor requesting writing/reading of data, and an error detection module requesting writing/reading of data to/from the memory controller in accordance with a request from the processor, an error detection module calculates a first error detection code of the first data having a write request from the processor, reads the second data having a read request from the processor from the memory, calculates a second error detection code from the read data, compares the first error detection code and the second error detection code, and transmits the result of the comparison to the external module.

公开(公告)号：US20210365093A1

公开(公告)日：2021-11-25

申请号：US17319880

申请日：2021-05-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo MORI ,  Kazuki FUKUOKA ,  Kenichi SHIMADA

IPC: G06F1/26 ,  G06F1/28

Abstract: A semiconductor device includes: a plurality of cores configured to receive power from a power supply; a plurality of power switch circuits provided for each core and configured to control the power supplied to the corresponding cores; a compare circuit configured to receive power from the power supply and compare output data of the plurality of cores; and a core voltage monitor circuit configured to monitor a voltage of a node that connects the power supply and the compare circuit.