Semiconductor device
    1.
    发明授权

    公开(公告)号:US10041841B2

    公开(公告)日:2018-08-07

    申请号:US15818357

    申请日:2017-11-20

    Abstract: A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.

    Voltage generating circuit
    2.
    发明授权

    公开(公告)号:US10289145B2

    公开(公告)日:2019-05-14

    申请号:US15966176

    申请日:2018-04-30

    Abstract: A voltage generating circuit, in which the influence of offset of an amplifier on an output voltage is reduced, has first and second bipolar transistors (Q1, Q2) having emitter terminals at the same electric potential. A base terminal of Q1 is disposed on a collector side of Q2. A first resistance element connects the collector side of Q2 with the base side of Q2; and a second resistance element (R1) connects a collector side of Q1 to R2. A third resistance element (R3) connects a base terminal of Q2 with the electric potential of the emitter terminals. An amplifier (A1) outputs a voltage based on a voltage difference between the collector sides of Q1 and Q2; and a voltage-current converting section (MP1, MP2) converts amplifier output into a current supplied to the connection node of R1 and R2. A voltage is then output on the basis of the generated current.

    Voltage generating circuit
    3.
    发明授权

    公开(公告)号:US09989985B2

    公开(公告)日:2018-06-05

    申请号:US15388308

    申请日:2016-12-22

    CPC classification number: G05F3/267 G05F3/20 G05F3/26 G05F3/30 H02M3/158

    Abstract: A voltage generating circuit, in which the influence of offset of an amplifier on an output voltage is reduced, has first and second bipolar transistors (Q1, Q2) having emitter terminals at the same electric potential. A base terminal of Q1 is disposed on a collector side of Q2. A first resistance element connects the collector side of Q2 with the base side of Q2; and a second resistance element (R1) connects a collector side of Q1 to R2. A third resistance element (R3) connects a base terminal of Q2 with the electric potential of the emitter terminals. An amplifier (A1) outputs a voltage based on a voltage difference between the collector sides of Q1 and Q2; and a voltage-current converting section (MP1, MP2) converts amplifier output into a current supplied to the connection node of R1 and R2. A voltage is then output on the basis of the generated current.

    Semiconductor device
    4.
    发明授权

    公开(公告)号:US09835499B2

    公开(公告)日:2017-12-05

    申请号:US14928856

    申请日:2015-10-30

    CPC classification number: G01K7/01 G01K2217/00 G01K2219/00 H03K21/00 H03K21/38

    Abstract: The present invention provides a semiconductor device having a sensor capable of improving precision while suppressing increase in occupation area. A semiconductor device has: a first counter; and a second counter (time measuring circuit) measuring time until a count value, which is obtained by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the first counter. The first counter obtains a piece of digital information corresponding to the first voltage on the basis of a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, on the basis of the time measured by the time measuring circuit.

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