公开(公告)号：US20140299979A1

公开(公告)日：2014-10-09

申请号：US14048804

申请日：2013-10-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tadatoshi DANNO ,  Toshiyuki HATA ,  Yuichi MACHIDA

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49568 ,  H01L21/4875 ,  H01L23/3107 ,  H01L23/4006 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/97 ,  H01L2023/4056 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate.

Abstract translation: 提高了半导体器件的可靠性。 半导体器件具有与第一金属板电隔离的第一金属板和第二金属板。 在第一金属板上安装包括形成在其上的晶体管元件的第一半导体芯片。 而在第二金属板上安装包括形成在其上的二极管元件的第二半导体芯片。 此外，半导体器件具有包括与第一半导体芯片或第二半导体芯片电耦合的多个引线的引线组。 第一和第二金属板沿引线排列的X方向排列。 这里，将第一金属板中的第一半导体芯片的周边区域的面积设定为大于第二金属板中的第二半导体芯片的周边区域的面积。