公开(公告)号：US20140252567A1

公开(公告)日：2014-09-11

申请号：US14261029

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/485 ,  H01L29/0657 ,  H01L29/78606 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/13

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括附接到晶片把手的半导体堆叠结构，其具有至少一个孔，其延伸穿过晶片把手到达半导体堆叠结构的暴露部分。 导热和电阻聚合物基本上填充至少一个孔并接触半导体堆叠结构的暴露部分。 用于制造半导体器件的一种方法包括在晶片手柄中形成图案化孔以暴露半导体堆叠结构的一部分。 图案化的孔可以或可以不与构成半导体堆叠结构的RF电路的部分对准。 接下来的步骤包括使半导体堆叠结构的暴露部分与聚合物接触，并且用聚合物基本上填充图案化的孔，其中聚合物是导热的并具有电阻性。

公开(公告)号：US09214337B2

公开(公告)日：2015-12-15

申请号：US14261029

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L21/683 ,  H01L29/786 ,  H01L29/06 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/485 ,  H01L29/0657 ,  H01L29/78606 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/13

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括附接到晶片把手的半导体堆叠结构，其具有至少一个孔，其延伸穿过晶片把手到达半导体堆叠结构的暴露部分。 导热和电阻聚合物基本上填充至少一个孔并接触半导体堆叠结构的暴露部分。 用于制造半导体器件的一种方法包括在晶片手柄中形成图案化孔以暴露半导体堆叠结构的一部分。 图案化的孔可以或可以不与构成半导体堆叠结构的RF电路的部分对准。 接下来的步骤包括使半导体堆叠结构的暴露部分与聚合物接触，并且用聚合物基本上填充图案化的孔，其中聚合物是导热的并具有电阻性。

公开(公告)号：US09184049B2

公开(公告)日：2015-11-10

申请号：US14261029

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L21/683 ,  H01L29/786 ,  H01L29/06 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

公开(公告)号：US20140306324A1

公开(公告)日：2014-10-16

申请号：US14315765

申请日：2014-06-26

Applicant: RF Micro Devices, Inc.

Inventor： Julio Costa ,  Michael Carroll ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

IPC: H01L23/373

CPC classification number: H01L23/3737 ,  H01L21/565 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/367 ,  H01L24/13 ,  H01L2221/6834 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构。 具有高导热性和高电阻率的聚合物基板设置在半导体堆叠结构的第一表面上。 一种方法包括提供具有与晶片把手直接接触的第一表面的半导体堆叠结构。 下一步涉及去除晶片把手以暴露半导体堆叠结构的第一表面。 以下步骤包括将具有高导热性和高电阻率的聚合物基材物质直接设置在半导体堆叠结构的第一表面上。

公开(公告)号：US20140252566A1

公开(公告)日：2014-09-11

申请号：US14260909

申请日：2014-04-24

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Julio Costa ,  Michael Carroll ,  Don Willis ,  Elizabeth Glass

IPC: H01L29/02 ,  H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/36 ,  H01L23/3737 ,  H01L29/78606 ,  H01L2224/13022

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device.

Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构。 具有高导热性和高电阻率的第一聚合物设置在半导体堆叠结构的第一表面上。 一种示例性方法包括提供具有与晶片把手直接接触的第二表面的半导体堆叠结构。 下一步涉及去除晶片把手以暴露半导体堆叠结构的第二表面。 以下步骤包括将具有高导热性和高电阻率的第二聚合物直接设置在半导体堆叠结构的第二表面上。 在配置第一聚合物和第二聚合物以实现半导体器件之前，附加方法将氮化硅层应用于半导体叠层结构的第一表面和第二表面。