Abstract:
An on-chip wavelength locker may include an optical waveguide splitter to split an input optical signal received from a laser. The on-chip wavelength locker may include a plurality of integrated periodic optical elements, each to receive a respective portion of the input optical signal after splitting of the input optical signal by the optical waveguide splitter, and provide, based on the respective portion of the input optical signal, a respective periodic output optical signal of a plurality of periodic output optical signals. Each periodic output optical signal, of the plurality of periodic output optical signals, may be phase shifted with respect to other periodic output optical signals of the plurality of periodic output optical signals. The on-chip wavelength locker may include a plurality of integrated photodiodes to receive the plurality of periodic output optical signals in association with wavelength locking the laser.
Abstract:
A multi-channel tunable laser includes: a frequency selective optical multiplexer comprising: a plurality of channel terminals for receiving/transmitting light; a plurality of channel waveguide blocks, each channel waveguide block comprising at least one reflectively terminated channel waveguide; and an optical coupling element optically coupling the plurality of channel terminals with the plurality of channel waveguide blocks, each of the channel waveguides of the plurality of channel waveguide blocks having a different length; a plurality of channel paths, each channel path coupled to a respective channel terminal of the plurality of channel terminals and comprising a gain element, a phase element and a reflective element; and a plurality of optical tuners, each one configured to tune the channel waveguides of a respective channel waveguide block of the plurality of channel waveguide blocks.
Abstract:
A light emitting device, an optical module and a manufacturing method thereof are disclosed. According to an example of the disclosure, the light emitting device may comprise an optical waveguide chip, a light emitting chip and a grating between the light emitting chip and the optical waveguide chip. The light emitting chip may emit laser light. The grating may couple the laser light emitted from the active layer into the optical waveguide chip in a way that the laser light is output along a length direction of the optical waveguide chip.
Abstract:
Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.
Abstract:
The disclosed embodiments provide a tunable laser that includes a set of M reflective silicon optical amplifiers (RSOAs) and a set of N narrow-band reflectors. It also includes a silicon-photonic optical switch, having M amplifier ports, which are coupled through a set of M optical waveguides to the set of M RSOAs, and N reflector ports, which are coupled to the set of N narrow-band reflectors. The tunable laser also includes a switching mechanism that facilitates coupling at least one selected amplifier port from the M amplifier ports with a selected reflector port from the N reflector ports, thereby causing an RSOA coupled to the selected amplifier port to form a lasing cavity with a narrow-band reflector coupled to the selected reflector port. The tunable laser also includes a laser output, which is optically coupled to the lasing cavity.
Abstract:
An optical semiconductor device includes: an active region which includes an active layer which produces light when current is injected therein, a first diffraction grating layer having a first diffraction grating with a prescribed grating period, and a phase shift portion formed within the first diffraction grating layer, wherein the phase shift portion provides a phase shift not smaller than 1.5π but not larger than 1.83π; and a distributed reflection mirror region which is optically coupled to a first end of the active region as viewed along a direction of an optical axis, and which includes a second diffraction grating which reflects the light produced by the active region back into the active region.
Abstract:
In the field of narrow linewidth laser sources and a laser device that comprises a laser source and a waveguide of determined refractive index with which it is coupled, a waveguide is single-mode and includes at least four reflectors in the form of trenches etched into the waveguide and irregularly distributed along the waveguide, the distance separating two neighbouring reflectors being above 1 μm, and the waveguide and the laser source have respective lengths such that the length of waveguide over which the reflectors are located is greater than the length of the laser source itself.
Abstract:
A method and apparatus for calibrating and controlling tunable lasers are disclosed. Multiple methodologies disclosed herein may be used, alone or in combination, which significantly speed up a calibration time and thus provide a significant advantage over existing technology in calibrating the tunable lasers. Certain methodologies benefit from a unique design of the tunable lasers that couple two or more optical facets to an output. The tunable lasers may be equipped with two or more sampled grating distributed Bragg reflector (SGDBR) mirrors and may include Semiconductor Optical Amplifiers (SOAs) after the SGDBR mirrors.
Abstract:
Provided is a transmission unit for an optical transmitter/receiver or an optical transmitter provided with an optical integrated circuit, characterized in the arrangement of a single-channel or multichannel semiconductor laser and the placement of a plurality of optical waveguides.This present invention is provided with: a semiconductor laser for emitting laser light in a plurality of channels; optical waveguides optically coupled in a corresponding manner to the semiconductor lasers, the optical waveguides propagating laser light as input light for each channel; optical modulators for modulating the input light and generating an optical signal; and an optical signal output unit coupled to the optical modulators, the optical signal output unit outputting the optical signal propagated from the optical modulators to the exterior. The present invention is characterized in that the semiconductor laser is arranged on the opposite side from an optical branching unit and the optical modulators, with the optical signal output unit interposed therebetween, in the plane of an opto-electric hybrid board.
Abstract:
A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.