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    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE
    1.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE 审中-公开

    公开(公告)号：US20190259912A1

    公开(公告)日：2019-08-22

    申请号：US16398958

    申请日：2019-04-30

    Applicant: ROHM CO., LTD.

    Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

    IPC: H01L33/24 ,  H01L33/42 ,  H01L33/38 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32 ,  H01L33/56 ,  H01L33/44

    Abstract: In a light-emitting element (1), a light-emitting layer (4), a second conductivity type semiconductor layer (5), a transparent electrode layer (6), a reflecting electrode layer (7) and an insulating layer (8) are stacked in this order on a first conductivity type semiconductor layer (3), while a first electrode layer (10) and a second electrode layer (12) are stacked on the insulating layer (8) in an isolated state. The light-emitting element (1) includes a plurality of insulating tube layers (9), discretely arranged in plan view, passing through the reflecting electrode layer (7), the transparent electrode layer (6), the second conductivity type semiconductor layer (5) and the light-emitting layer (4) continuously from the insulating layer (8) and reaching the first conductivity type semiconductor layer (3), first contacts (11), continuous from the first electrode layer (10), connected to the first conductivity type semiconductor layer (3) through the insulating layer (8) and the insulating tube layers (9), and second contacts (13), continuous from the second electrode layer (12), passing through the insulating layer (8) to be connected to the reflecting electrode layer (7).

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20170331004A1

    公开(公告)日：2017-11-16

    申请号：US15586613

    申请日：2017-05-04

    Applicant: ROHM CO., LTD.

    Inventor： Takao FUJIMORI ,  Kazuaki TSUTSUMI ,  Hirotaka OBUCHI

    IPC: H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

    CPC classification number: H01L33/24 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/46 ,  H01L33/62

    Abstract: A semiconductor light emitting device includes a substrate having a first major surface and a second major surface, a semiconductor layer that includes a first semiconductor layer of a first conductive type formed on the first major surface of the substrate, a light emitting layer formed on the first semiconductor layer and a second semiconductor layer of a second conductive type formed on the light emitting layer, and a mesa structure formed in the semiconductor layer by selectively notching the first semiconductor layer, the light emitting layer and the second semiconductor layer so as to expose the first semiconductor layer, and a ratio of a luminescent area of the light emitting layer with respect to an area of the first major surface of the substrate being set to equal to or smaller than 0.25.

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE
    3.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE 审中-公开

    公开(公告)号：US20170098734A1

    公开(公告)日：2017-04-06

    申请号：US15387925

    申请日：2016-12-22

    Applicant: ROHM CO., LTD.

    Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

    IPC: H01L33/24 ,  H01L33/38 ,  H01L33/56 ,  H01L33/44 ,  H01L33/32 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: In a light-emitting element (1), a light-emitting layer (4), a second conductivity type semiconductor layer (5), a transparent electrode layer (6), a reflecting electrode layer (7) and an insulating layer (8) are stacked in this order on a first conductivity type semiconductor layer (3), while a first electrode layer (10) and a second electrode layer (12) are stacked on the insulating layer (8) in an isolated state. The light-emitting element (1) includes a plurality of insulating tube layers (9), discretely arranged in plan view, passing through the reflecting electrode layer (7), the transparent electrode layer (6), the second conductivity type semiconductor layer (5) and the light-emitting layer (4) continuously from the insulating layer (8) and reaching the first conductivity type semiconductor layer (3), first contacts (11), continuous from the first electrode layer (10), connected to the first conductivity type semiconductor layer (3) through the insulating layer (8) and the insulating tube layers (9), and second contacts (13), continuous from the second electrode layer (12), passing through the insulating layer (8) to be connected to the reflecting electrode layer (7).

    LIGHT EMITTING ELEMENT UNIT AND METHOD FOR MANUFACTURING THE SAME, LIGHT EMITTING ELEMENT PACKAGE AND ILLUMINATING DEVICE
    5.
    发明申请
    LIGHT EMITTING ELEMENT UNIT AND METHOD FOR MANUFACTURING THE SAME, LIGHT EMITTING ELEMENT PACKAGE AND ILLUMINATING DEVICE 有权
    发光元件单元及其制造方法，发光元件包装和照明装置

    公开(公告)号：US20150270461A1

    公开(公告)日：2015-09-24

    申请号：US14730796

    申请日：2015-06-04

    Applicant: ROHM CO., LTD.

    Inventor： Takao FUJIMORI ,  Yasuo NAKANISHI ,  Nobuaki MATSUI ,  Hirotaka OBUCHI

    IPC: H01L33/60 ,  H01L33/62 ,  H01L33/48

    CPC classification number: H01L33/60 ,  F21V7/00 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225

    Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

    Abstract translation: 根据本发明的发光元件单元包括具有表面，后表面和侧表面的半导体发光元件，其中表面或背表面是从其发射的光的光提取表面， 具有底壁和侧壁的基座具有由底壁和侧壁限定的凹部，并且通过底壁将光提取表面向上指向的位置支撑半导体发光元件 所述凹部具有在所述侧壁上的倾斜面，相对于所述底壁以与所述半导体发光元件的侧面相对的方式倾斜预定角度，并且形成在所述倾斜面上的光反射膜 底座。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
    6.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
    发光装置和发光装置包装

    公开(公告)号：US20140191270A1

    公开(公告)日：2014-07-10

    申请号：US14203385

    申请日：2014-03-10

    Applicant: ROHM CO., LTD.

    Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

    IPC: H01L33/22

    CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

    Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

    Abstract translation: 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE
    9.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE 有权

    公开(公告)号：US20160005929A1

    公开(公告)日：2016-01-07

    申请号：US14856599

    申请日：2015-09-17

    Applicant: ROHM CO., LTD.

    Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

    IPC: H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7.

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