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    Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same
    1.
    发明授权
    Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same 有权
    在外延生长层之间具有降低的界面电荷的电子器件及其制造方法

    公开(公告)号：US07531851B1

    公开(公告)日：2009-05-12

    申请号：US11713070

    申请日：2007-02-28

    申请人： Rajesh D. Rajavel ,  Mary Y. Chen ,  Steven S. Bui ,  David H. Chow ,  James Chingwei Li ,  Mehran Mokhtari ,  Marko Sokolich

    发明人： Rajesh D. Rajavel ,  Mary Y. Chen ,  Steven S. Bui ,  David H. Chow ,  James Chingwei Li ,  Mehran Mokhtari ,  Marko Sokolich

    IPC分类号： H01L31/0328

    CPC分类号： H01L29/7371 ,  H01L27/0605 ,  H01L29/0821 ,  H01L29/66318 ,  Y10S438/906

    摘要： An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer supported by the As-based nucleation layer, a base layer supported by the collector layer, an emitter layer and a base contact supported by the base layer, an emitter cap layer supported by the emitter layer, an emitter contact supported by the emitter cap layer, and a collector contact supported by the sub-collector. A method provides for selecting a first InP layer, forming an As-based nucleation layer on the first InP layer, and epitaxially growing a second InP layer on the As-based nucleation layer.

    摘要翻译： 电子器件包含衬底，由衬底支撑的子集电极，具有选择性注入的掩埋子集电极并由子集电极支撑的未掺杂层，由未掺杂的部分支撑的基于As的成核层 由As基成核层支撑的集电体层，由集电极层支撑的基极层，由基极层支撑的发射极层和基极接触，由发射极层支撑的发射极盖层，负极 由发射极盖层和由集电极支撑的集电极触点。 一种方法提供选择第一InP层，在第一InP层上形成基于As的成核层，以及在As基成核层上外延生长第二InP层。

    Modulation doped super-lattice base for heterojunction bipolar transistors
    3.
    发明授权
    Modulation doped super-lattice base for heterojunction bipolar transistors 有权
    用于异质结双极晶体管的调制掺杂超晶格基极

    公开(公告)号：US08957455B1

    公开(公告)日：2015-02-17

    申请号：US13438810

    申请日：2012-04-03

    申请人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    发明人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    IPC分类号： H01L29/737

    CPC分类号： H01L29/155 ,  H01L29/201 ,  H01L29/7373

    摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.

    摘要翻译： 具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙， 第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体， 耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

    Modulation doped super-lattice base for heterojunction bipolar transistors
    4.
    发明授权
    Modulation doped super-lattice base for heterojunction bipolar transistors 有权
    用于异质结双极晶体管的调制掺杂超晶格基极

    公开(公告)号：US08178946B1

    公开(公告)日：2012-05-15

    申请号：US12623325

    申请日：2009-11-20

    申请人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    发明人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    IPC分类号： H01L29/00

    CPC分类号： H01L29/155 ,  H01L29/201 ,  H01L29/7373

    摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.

    摘要翻译： 具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙， 第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体， 耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

    Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs
    5.
    发明授权
    Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs 有权
    用于高性能HBT和BJT的调制掺杂超晶格子集电极

    公开(公告)号：US07868335B1

    公开(公告)日：2011-01-11

    申请号：US12193436

    申请日：2008-08-18

    申请人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    发明人： James Chingwei Li ,  Marko Sokolich ,  Tahir Hussain ,  David H. Chow

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7371 ,  H01L29/155 ,  H01L29/365

    摘要： A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.

    摘要翻译： 具有发射极，基极和集电极的双极结型晶体管包括与集电极相邻的一个或多个层组的叠层。 每个层组包括具有第一带隙的第一材料，其中所述第一材料是高度掺杂的，以及具有比所述第一带隙窄的第二带隙的第二材料，其中所述第二材料最多是轻掺杂的。

    Bipolar transistors with low parasitic losses
    7.
    发明授权
    Bipolar transistors with low parasitic losses 失效
    具有低寄生损耗的双极晶体管

    公开(公告)号：US07569872B1

    公开(公告)日：2009-08-04

    申请号：US11313865

    申请日：2005-12-20

    申请人： Rajesh D. Rajavel ,  David H. Chow ,  Tahir Hussain ,  Yakov Royter

    发明人： Rajesh D. Rajavel ,  David H. Chow ,  Tahir Hussain ,  Yakov Royter

    IPC分类号： H01L29/739 ,  H01L31/072

    CPC分类号： H01L29/7371 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66318

    摘要： Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.

    摘要翻译： 提出了双极结晶体管（BJT）和具有低寄生效应的单或双异质结双极晶体管及其制造方法。 制造晶体管使得基极接触区域下面的集电极区域被去激活。 这导致基极集电极寄生电容Cbc的急剧减小。 本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。

    Electronically tunable and reconfigurable hyperspectral photon detector
    9.
    发明授权
    Electronically tunable and reconfigurable hyperspectral photon detector 有权
    电子可调谐和可重新配置的高光谱光子检测器

    公开(公告)号：US07652252B1

    公开(公告)日：2010-01-26

    申请号：US11868915

    申请日：2007-10-08

    申请人： Rajesh D. Rajavel ,  David H. Chow ,  Andrew T. Hunter

    发明人： Rajesh D. Rajavel ,  David H. Chow ,  Andrew T. Hunter

    IPC分类号： G01J5/20

    CPC分类号： G01J3/32 ,  G01J3/2803 ,  H01L27/14652 ,  H01L31/03046 ,  H01L31/1035 ,  Y02E10/544 ,  Y02P70/521

    摘要： Electronically tunable and reconfigurable hyperspectral IR detectors and methods for making the same are presented. In one embodiment, a reconfigurable hyperspectral sensor (or detector) detects radiation from about 0.4 μm to about 2 μm and beyond. This sensor is configured to be compact, and lightweight and offers hyperspectral imaging capability while providing wavelength agility and tunability at the chip-level. That is, the sensor is used to rapidly image across diverse terrain to identify man-made objects and other anomalies in cluttered environments.

    摘要翻译： 介绍了电子可调和可重构高光谱红外探测器及其制作方法。 在一个实施例中，可重新配置的高光谱传感器（或检测器）检测约0.4μm至约2μm及以上的辐射。 该传感器配置为紧凑，重量轻，提供高光谱成像能力，同时在芯片级提供波长敏捷性和可调谐性。 也就是说，传感器用于在不同的地形上快速成像，以在杂乱的环境中识别人造物体和其他异常现象。

    Low power bipolar transistors with low parasitic losses
    10.
    发明授权
    Low power bipolar transistors with low parasitic losses 失效
    具有低寄生损耗的低功率双极晶体管

    公开(公告)号：US07372084B1

    公开(公告)日：2008-05-13

    申请号：US11313881

    申请日：2005-12-20

    申请人： Rajesh D. Rajavel ,  Kenneth Elliott ,  David H. Chow

    发明人： Rajesh D. Rajavel ,  Kenneth Elliott ,  David H. Chow

    IPC分类号： H01L29/73

    CPC分类号： H01L29/7371 ,  H01L29/1004 ,  H01L29/66318

    摘要： Low power double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.

    摘要翻译： 提出了具有低寄生效应的低功率双异质结双极晶体管及其制造方法。 制造晶体管使得基极接触区域下面的集电极区域被去激活。 这导致基极 - 集电极寄生电容C bc 的急剧减小。 本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。