公开(公告)号：US08220502B1

公开(公告)日：2012-07-17

申请号：US11966654

申请日：2007-12-28

申请人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

发明人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

IPC分类号： G01F22/02

CPC分类号： G01F22/02 ,  Y10T137/86035

摘要： A pressure gauge may be coupled to a vessel into which a liquid chemical is to be dispensed. The volume of the vessel may be known and a control device may determine an initial pressure of the vessel using the pressure gauge. A volume of liquid chemical may be dispensed into the vessel which may cause the pressure within the vessel to increase to a second pressure. The control device may determine the second pressure using the pressure gauge may calculate the volume of liquid chemical dispensed into the vessel using the volume of the vessel, the initial pressure of the vessel, and the second pressure of the vessel.

摘要翻译： 压力计可以连接到要分配液体化学品的容器中。 容器的体积可以是已知的，并且控制装置可以使用压力计来确定容器的初始压力。 液体化学品的体积可以分配到容器中，这可能导致容器内的压力增加到第二压力。 控制装置可以使用压力计来确定第二压力可以使用容器的体积，容器的初始压力和容器的第二压力来计算分配到容器中的液体化学品的体积。

公开(公告)号：US20120273072A1

公开(公告)日：2012-11-01

申请号：US13492477

申请日：2012-06-08

申请人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

发明人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

IPC分类号： B67D7/02

CPC分类号： G01F22/02 ,  Y10T137/86035

摘要： A pressure gauge may be coupled to a vessel into which a liquid chemical is to be dispensed. The volume of the vessel may be known and a control device may determine an initial pressure of the vessel using the pressure gauge. A volume of liquid chemical may be dispensed into the vessel which may cause the pressure within the vessel to increase to a second pressure. The control device may determine the second pressure using the pressure gauge may calculate the volume of liquid chemical dispensed into the vessel using the volume of the vessel, the initial pressure of the vessel, and the second pressure of the vessel.

摘要翻译： 压力计可以连接到要分配液体化学品的容器中。 容器的体积可以是已知的，并且控制装置可以使用压力计来确定容器的初始压力。 液体化学品的体积可以分配到容器中，这可能导致容器内的压力增加到第二压力。 控制装置可以使用压力计来确定第二压力可以使用容器的体积，容器的初始压力和容器的第二压力来计算分配到容器中的液体化学品的体积。

公开(公告)号：US09164517B2

公开(公告)日：2015-10-20

申请号：US13214426

申请日：2011-08-22

申请人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

发明人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

IPC分类号： G05D16/00 ,  G05D7/06 ,  B01J19/00

CPC分类号： G05D7/0635 ,  B01J19/0046 ,  B01J2219/00286 ,  B01J2219/00306 ,  B01J2219/00337 ,  B01J2219/00389 ,  B01J2219/00418 ,  B01J2219/00479 ,  B01J2219/00585 ,  B01J2219/00698 ,  B01J2219/0072 ,  B01J2219/00756 ,  Y10T137/0379 ,  Y10T137/3115 ,  Y10T137/3127 ,  Y10T137/4807

摘要： A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a predetermined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.

摘要翻译： 压力计可以耦合到供应管线，其将液体从瓶运送到组合加工工具中的一个或多个混合容器和/或一个或多个反应器。 控制装置可以监测由压力计测量的压力，并且控制装置可以被配置成基于测量的压力与预定压力值的比较来改变供给到瓶子的压力。 控制装置可以使用耦合到压力源的压力调节器来调节提供给瓶子的压力。 通过改变提供给瓶子的压力，控制装置可以保持流体从液体源到一个或多个混合容器和/或一个或多个反应器的相对恒定的流速。

公开(公告)号：US08037894B1

公开(公告)日：2011-10-18

申请号：US11965442

申请日：2007-12-27

申请人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

发明人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

IPC分类号： F17D3/00

CPC分类号： G05D7/0635 ,  B01J19/0046 ,  B01J2219/00286 ,  B01J2219/00306 ,  B01J2219/00337 ,  B01J2219/00389 ,  B01J2219/00418 ,  B01J2219/00479 ,  B01J2219/00585 ,  B01J2219/00698 ,  B01J2219/0072 ,  B01J2219/00756 ,  Y10T137/0379 ,  Y10T137/3115 ,  Y10T137/3127 ,  Y10T137/4807

摘要： A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a pre-determined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.

摘要翻译： 压力计可以耦合到供应管线，其将液体从瓶运送到组合加工工具中的一个或多个混合容器和/或一个或多个反应器。 控制装置可以监测由压力计测量的压力，并且控制装置可以被配置成基于测量的压力与预定压力值的比较来改变供给到瓶子的压力。 控制装置可以使用耦合到压力源的压力调节器来调节提供给瓶子的压力。 通过改变提供给瓶子的压力，控制装置可以保持流体从液体源到一个或多个混合容器和/或一个或多个反应器的相对恒定的流速。

公开(公告)号：US20110303696A1

公开(公告)日：2011-12-15

申请号：US13214426

申请日：2011-08-22

申请人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

发明人： Rajesh Kelekar ,  Gaurav Verma ,  Kurt Weiner

IPC分类号： B67D1/00

CPC分类号： G05D7/0635 ,  B01J19/0046 ,  B01J2219/00286 ,  B01J2219/00306 ,  B01J2219/00337 ,  B01J2219/00389 ,  B01J2219/00418 ,  B01J2219/00479 ,  B01J2219/00585 ,  B01J2219/00698 ,  B01J2219/0072 ,  B01J2219/00756 ,  Y10T137/0379 ,  Y10T137/3115 ,  Y10T137/3127 ,  Y10T137/4807

摘要： A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a predetermined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.

摘要翻译： 压力计可以耦合到供应管线，其将液体从瓶运送到组合加工工具中的一个或多个混合容器和/或一个或多个反应器。 控制装置可以监测由压力计测量的压力，并且控制装置可以被配置成基于测量的压力与预定压力值的比较来改变供给到瓶子的压力。 控制装置可以使用耦合到压力源的压力调节器来调节提供给瓶子的压力。 通过改变提供给瓶子的压力，控制装置可以保持流体从液体源到一个或多个混合容器和/或一个或多个反应器的相对恒定的流速。

公开(公告)号：US07824935B2

公开(公告)日：2010-11-02

申请号：US12167118

申请日：2008-07-02

申请人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

发明人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

IPC分类号： H01L21/00

CPC分类号： G01R31/2831 ,  G01R31/2834 ,  H01L22/34

摘要： In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

摘要翻译： 在本发明的实施例中，描述了用于这些方法的组合处理方法和测试芯片。 这些方法和测试芯片能够有效地开发用于半导体制造工艺的材料，工艺和工艺顺序集成方案。 通常，这些方法简化了在测试芯片上形成器件或部分形成的器件的处理顺序，使得器件可以在形成后立即进行测试。 即时测试允许测试芯片上各种材料，工艺或工艺顺序的高通量测试。 测试芯片具有多个位置隔离区域，其中每个区域彼此变化，并且测试芯片被设计为能够实现不同区域的高通量测试。

公开(公告)号：US08143619B2

公开(公告)日：2012-03-27

申请号：US12905945

申请日：2010-10-15

申请人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

发明人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

IPC分类号： H01L29/00

CPC分类号： G01R31/2831 ,  G01R31/2834 ,  H01L22/34

摘要： In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

摘要翻译： 在本发明的实施例中，描述了用于这些方法的组合处理方法和测试芯片。 这些方法和测试芯片能够有效地开发用于半导体制造工艺的材料，工艺和工艺顺序集成方案。 通常，这些方法简化了在测试芯片上形成器件或部分形成的器件的处理顺序，使得器件可以在形成后立即进行测试。 即时测试允许测试芯片上各种材料，工艺或工艺顺序的高通量测试。 测试芯片具有多个位置隔离区域，其中每个区域彼此变化，并且测试芯片被设计为能够实现不同区域的高通量测试。

公开(公告)号：US20100001269A1

公开(公告)日：2010-01-07

申请号：US12167118

申请日：2008-07-02

申请人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

发明人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

IPC分类号： C23C16/00 ,  H01L21/66 ,  H01L23/58

CPC分类号： G01R31/2831 ,  G01R31/2834 ,  H01L22/34

摘要： In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

摘要翻译： 在本发明的实施例中，描述了用于这些方法的组合处理方法和测试芯片。 这些方法和测试芯片能够有效地开发用于半导体制造工艺的材料，工艺和工艺顺序集成方案。 通常，这些方法简化了在测试芯片上形成器件或部分形成的器件的处理顺序，使得器件可以在形成后立即进行测试。 即时测试允许测试芯片上各种材料，工艺或工艺顺序的高通量测试。 测试芯片具有多个位置隔离区域，其中每个区域彼此变化，并且测试芯片被设计为能够实现不同区域的高通量测试。

公开(公告)号：US20110248264A1

公开(公告)日：2011-10-13

申请号：US12905945

申请日：2010-10-15

申请人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

发明人： Gaurav Verma ,  Kurt Weiner ,  Prashant Phatak ,  Imran Hashim ,  Sandra Malhotra ,  Tony Chiang

IPC分类号： H01L29/66

CPC分类号： G01R31/2831 ,  G01R31/2834 ,  H01L22/34

摘要： In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

摘要翻译： 在本发明的实施例中，描述了用于这些方法的组合处理方法和测试芯片。 这些方法和测试芯片能够有效地开发用于半导体制造工艺的材料，工艺和工艺顺序集成方案。 通常，这些方法简化了在测试芯片上形成器件或部分形成的器件的处理顺序，使得器件可以在形成后立即进行测试。 即时测试允许测试芯片上各种材料，工艺或工艺顺序的高通量测试。 测试芯片具有多个位置隔离区域，其中每个区域彼此变化，并且测试芯片被设计为能够实现不同区域的高通量测试。

公开(公告)号：US06297135B1

公开(公告)日：2001-10-02

申请号：US09158265

申请日：1998-09-21

申请人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

发明人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

IPC分类号： H01L2122

CPC分类号： H01L29/66507 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76202 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invented method can be used to form silicide contacts to an integrated MISFET device. Field isolation layers are formed to electrically isolate a portion of the silicon substrate, and gate, source and drain regions are formed therein. A polysilicon runner(s) that makes an electrical connection to the integrated device, is formed on the isolation layers. The structure is subjected to ion implantation to amorphized portions of the silicon gate, source, drain and runner regions. A metal layer is formed in contact with the amorphized regions, and the metal layer overlying the active region of the integrated device is selectively irradiated using a mask. The light melts part of the gate, and amorphized source and drain regions while the remaining portions of the integrated device and substrate remain in their solid phases. Metal diffuses into the melted gate, source and drain regions which are thus converted into respective silicide alloy regions. Preferably, during selective irradiation, a portion of the gate region is not exposed to light so that it is relatively cool and acts as a heat sink to draw heat away from the irradiated portion of the gate region. The heat sink effect causes the gate silicidation rate to more closely correspond with the relatively slow source and drain silicidation rates. The method further includes a blanket irradiation step to diffuse metal into the runner regions to form silicide alloy regions which are then treated to form silicide regions.

摘要翻译： 本发明的方法可用于形成集成MISFET器件的硅化物接触。 形成场隔离层以电隔离硅衬底的一部分，并且在其中形成栅极，源极和漏极区域。 在隔离层上形成有与集成器件电连接的多晶硅浇道。 对硅栅，源极，漏极和流道区域的非晶化部分进行离子注入。 形成与非晶化区域接触的金属层，并且使用掩模选择性地照射覆盖在一体化器件的有源区域上的金属层。 光熔化栅极的一部分，并且源极和漏极区域非晶化，而集成器件和衬底的其余部分保持固相。 金属扩散到熔融的栅极，源极和漏极区域中，从而将其转变成相应的硅化物合金区域。 优选地，在选择性照射期间，栅极区域的一部分不暴露于光，使得其相对较冷，并且用作散热器以将热量从栅极区域的照射部分吸走。 散热效应使栅极硅化速率更接近于相对较慢的源极和漏极硅化速率。 该方法还包括毯子辐射步骤，以将金属扩散到流道区域中以形成硅化物合金区域，然后将其处理形成硅化物区域。