公开(公告)号：US06297135B1

公开(公告)日：2001-10-02

申请号：US09158265

申请日：1998-09-21

申请人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

发明人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

IPC分类号： H01L2122

CPC分类号： H01L29/66507 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76202 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invented method can be used to form silicide contacts to an integrated MISFET device. Field isolation layers are formed to electrically isolate a portion of the silicon substrate, and gate, source and drain regions are formed therein. A polysilicon runner(s) that makes an electrical connection to the integrated device, is formed on the isolation layers. The structure is subjected to ion implantation to amorphized portions of the silicon gate, source, drain and runner regions. A metal layer is formed in contact with the amorphized regions, and the metal layer overlying the active region of the integrated device is selectively irradiated using a mask. The light melts part of the gate, and amorphized source and drain regions while the remaining portions of the integrated device and substrate remain in their solid phases. Metal diffuses into the melted gate, source and drain regions which are thus converted into respective silicide alloy regions. Preferably, during selective irradiation, a portion of the gate region is not exposed to light so that it is relatively cool and acts as a heat sink to draw heat away from the irradiated portion of the gate region. The heat sink effect causes the gate silicidation rate to more closely correspond with the relatively slow source and drain silicidation rates. The method further includes a blanket irradiation step to diffuse metal into the runner regions to form silicide alloy regions which are then treated to form silicide regions.

摘要翻译： 本发明的方法可用于形成集成MISFET器件的硅化物接触。 形成场隔离层以电隔离硅衬底的一部分，并且在其中形成栅极，源极和漏极区域。 在隔离层上形成有与集成器件电连接的多晶硅浇道。 对硅栅，源极，漏极和流道区域的非晶化部分进行离子注入。 形成与非晶化区域接触的金属层，并且使用掩模选择性地照射覆盖在一体化器件的有源区域上的金属层。 光熔化栅极的一部分，并且源极和漏极区域非晶化，而集成器件和衬底的其余部分保持固相。 金属扩散到熔融的栅极，源极和漏极区域中，从而将其转变成相应的硅化物合金区域。 优选地，在选择性照射期间，栅极区域的一部分不暴露于光，使得其相对较冷，并且用作散热器以将热量从栅极区域的照射部分吸走。 散热效应使栅极硅化速率更接近于相对较慢的源极和漏极硅化速率。 该方法还包括毯子辐射步骤，以将金属扩散到流道区域中以形成硅化物合金区域，然后将其处理形成硅化物区域。

公开(公告)号：US06387803B2

公开(公告)日：2002-05-14

申请号：US09158346

申请日：1998-09-21

申请人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

发明人： Somit Talwar ,  Gaurav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

IPC分类号： H01L2144

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76202 ,  H01L21/76895 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invented method produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes a step of producing an amorphous region on the silicon body using ion implantation, for example, a step of forming a metal layer such as titanium, cobalt or nickel in contact with the amorphous region, and a step of irradiating the metal with intense light from a source such as a laser, to cause metal atoms to diffuse into the amorphous region to form an alloy region with a silicide composition. In an application of the invented method to the manufacture of a MISFET device, the metal layer is preferably formed with a thickness that is at least sufficient to produce a stoichiometric proportion of metal and silicon atoms in the amorphous region of the gate of the MISFET device. Importantly, the irradiating step proceeds until the metal overlying the gate alloy region is consumed and the gate alloy region is exposed. The gate alloy region has a higher reflectivity than the metal layer, and thus reduces further thermal loading of the gate alloy region so that silicide growth can be continued in the source and drain regions without adversely impacting the gate of the MISFET device. The invention also includes an integrated MISFET device in which the gate silicide region is greater than the source/drain silicide region.

摘要翻译： 本发明的方法在硅体上产生可用于各种目的的硅化物区域，包括减少对硅体或其上形成的集成电子器件的电接触电阻。 本发明的方法包括使用离子注入在硅体上制造非晶区域的步骤，例如形成与非晶区域接触的诸如钛，钴或镍的金属层的步骤，以及照射金属 来自诸如激光器的源的强光使金属原子扩散到非晶区域中以形成具有硅化物组成的合金区域。 在本发明的方法应用于制造MISFET器件的过程中，金属层优选形成为至少足以在MISFET器件的栅极的非晶区域中产生化学计量比例的金属和硅原子的厚度 。 重要的是，照射步骤进行直到覆盖在栅极合金区域上的金属被消耗，并且露出栅极合金区域。 栅极合金区域具有比金属层更高的反射率，从而降低栅极合金区域的进一步的热负荷，使得可以在源极和漏极区域中继续进行硅化物生长，而不会对MISFET器件的栅极产生不利影响。 本发明还包括其中栅极硅化物区域大于源极/漏极硅化物区域的集成MISFET器件。

公开(公告)号：US5888888A

公开(公告)日：1999-03-30

申请号：US791775

申请日：1997-01-29

申请人： Somit Talwar ,  Guarav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

发明人： Somit Talwar ,  Guarav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

IPC分类号： H01L21/225 ,  H01L21/265 ,  H01L21/268 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/22 ,  H01L21/24

CPC分类号： H01L29/66507 ,  H01L21/268 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575 ,  H01L21/26506 ,  H01L21/26513

摘要： The method of this invention produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes the steps of producing an amorphous region on the silicon body using ion implantation, for example, forming or positioning a metal such as titanium, cobalt or nickel in contact with the amorphous region, and irradiating the metal with intense light from a laser source, for example, to cause metal atoms to diffuse into the amorphous region. The amorphous region thus becomes an alloy region with the desired silicide composition. Upon cooling after irradiation, the alloy region becomes partially crystalline. To convert the alloy region into a more crystalline form, the invented method preferably includes a step of treating the alloy region using rapid thermal annealing, for example. An insulator layer and a conductive lead can subsequently be patterned to establish electrical contact to the silicide region. The low contact resistivity of the silicide region provides the capability to transmit relatively high-frequency electronic signals through the contact region. In a preferred application, the invented method is used to form self-aligned silicide contact regions for the gate, source and drain of a metal-insulator-semiconductor field-effect transistor (MISFET).

摘要翻译： 本发明的方法在硅体上产生可用于各种目的的硅化物区域，包括降低与硅体或其上形成的集成电子器件的电接触电阻。 本发明的方法包括以下步骤：使用离子注入在硅体上产生非晶区域，例如形成或定位与非晶区域接触的诸如钛，钴或镍的金属，并用来自 例如，激光源使金属原子扩散到非晶区域。 因此，非晶区域成为具有所需硅化物组成的合金区域。 照射后冷却，合金区域变得部分结晶。 为了将合金区域转化为更结晶的形式，本发明的方法优选包括例如使用快速热退火处理合金区域的步骤。 随后可以对绝缘体层和导电引线进行构图以建立与硅化物区域的电接触。 硅化物区域的低接触电阻率提供了通过接触区域传输相对高频电子信号的能力。 在优选的应用中，本发明的方法用于形成用于金属 - 绝缘体 - 半导体场效应晶体管（MISFET）的栅极，源极和漏极的自对准硅化物接触区域。

公开(公告)号：US5908307A

公开(公告)日：1999-06-01

申请号：US792107

申请日：1997-01-31

申请人： Somit Talwar ,  Karl-Josef Kramer ,  Guarav Verma ,  Kurt Weiner

发明人： Somit Talwar ,  Karl-Josef Kramer ,  Guarav Verma ,  Kurt Weiner

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08

CPC分类号： H01L29/66575 ,  H01L21/2254 ,  H01L21/26506 ,  H01L21/823814 ,  H01L29/0847 ,  Y10S148/061

摘要： Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in crystalline silicon and (2) shadowing and diffraction-interference effects by an already fabricated gate of a field-effect transistor on incident laser radiation. Such problems, in the past, have prevented prior-art projection gas immersion laser doping from being effectively employed in the fabrication of integrated circuits comprising MOS field-effect transistors employing 100 nm and shallower junction technology.

摘要翻译： 晶体硅表面层的超非晶化至超浅（例如，小于100nm）深度提供了制造问题的解决方案，包括（1）晶体硅中的高热传导和（2）阴影和衍射干涉效应 通过场效应晶体管已经制造的入射激光辐射的栅极。 过去这些问题已经阻止了现有技术的投影气体浸没激光掺杂在制造包含使用100nm和较浅结结技术的MOS场效应晶体管的集成电路中有效地使用。

公开(公告)号：US06300208B1

公开(公告)日：2001-10-09

申请号：US09505264

申请日：2000-02-16

申请人： Somit Talwar ,  Gaurav Verma

发明人： Somit Talwar ,  Gaurav Verma

IPC分类号： H01L21336

CPC分类号： H01L21/324 ,  H01L21/268 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66575

摘要： The invented method can be used to melt and recrystallize the source and drain regions of an integrated transistor device(s) using a laser, for example. The invented method counteracts shadowing and interference effects caused by the presence of the gate region(s) during annealing of the source and drain regions with radiant energy generated by a laser, for example. The invented method includes forming a radiant energy absorber layer over at least the gate region(s) of an integrated transistor device(s), and irradiating the radiant energy absorber layer with radiant energy to generate heat in the source and drain regions as well as in the radiant energy absorber layer. The heat generated in the radiant energy absorber layer passes through the gate region(s) to portions of source and drain regions of the integrated transistor device(s) adjacent the gate region(s). The thermal energy supplied from the radiant energy absorber layer to the portions of the source and drain regions adjacent the gate region(s) can be used to offset the radiant energy lost in these portions of the source and drain regions through shadowing and interference effects. The invention is also directed to an article that includes the radiant energy absorber layer.

摘要翻译： 例如，本发明的方法可以用于使用激光熔化并重结晶集成晶体管器件的源极和漏极区域。 本发明的方法例如通过激光产生的具有辐射能的源极和漏极区退火期间抵消由于栅极区域的存在而引起的阴影和干涉效应。 本发明的方法包括在至少一个或多个集成晶体管器件的栅极区域上形成辐射能吸收体层，并且用辐射能辐射辐射能吸收体层，以在源极和漏极区域中产生热量，以及 在辐射能吸收层中。 在辐射能量吸收层中产生的热量通过栅极区域到达与栅极区域相邻的集成晶体管器件的源极和漏极区域的一部分。 从辐射能量吸收体层向邻近栅极区域的源极和漏极区域提供的热能可用于通过阴影和干涉效应来抵消在源极和漏极区域的这些部分中损失的辐射能。 本发明还涉及一种包括辐射能吸收层的制品。

公开(公告)号：US5956603A

公开(公告)日：1999-09-21

申请号：US141842

申请日：1998-08-27

申请人： Somit Talwar ,  Kurt Weiner

发明人： Somit Talwar ,  Kurt Weiner

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/268 ,  H01L21/26513 ,  H01L21/26506 ,  H01L21/8238 ,  H01L29/6659 ,  Y10S438/952

摘要： A method for fabricating a plurality of shallow-junction metal oxide semiconductor field-effect transistors (MOSFETs) on a selected area of a silicon wafer, in the case in which the MOSFETs are spaced from one another by substantially transparent isolation elements. The method includes the step of flooding the entire selected area with laser radiation that is intended to effect the heating to a desired threshold temperature of only the selected depth of a surface layer of silicon that has been previously amorphized to this selected depth and then doped. This threshold temperature is sufficient to melt amorphized silicon but is insufficient to melt crystalline silicon. However, should the laser radiation be directly incident on both the substantially transparent isolation elements and the silicon surface, a variable portion of the energy of the incident radiation traveling through the substantially transparent isolation elements would be transferred to the silicon surfaces in contact with the isolation elements depending on the depth of the isolation elements thereby causing unpredictable additional heating of the silicon which would result in an unwanted shift in the fluence required to reach the melt threshold temperature in those silicon regions which reach the melt threshold temperature. To prevent this, a top layer stack of a dielectric and a highly radiation-absorbent material (e.g., silicon dioxide and tantalum nitride) is deposited over the selected area prior to the flooding of the entire selected area with laser radiation taking place. After, the melted silicon has cooled and recrystallized, the top layer of highly radiation-absorbent material is stripped.

摘要翻译： 在通过基本上透明的隔离元件彼此隔开的情况下，在硅晶片的选定区域上制造多个浅结金属氧化物半导体场效应晶体管（MOSFET）的方法。 该方法包括用激光辐射淹没整个所选择的区域的步骤，该激光辐射旨在将加热至仅被预先非晶化到该选定深度的硅的表面层的选定深度的所需阈值温度，然后掺杂。 该阈值温度足以熔化非晶硅，但不足以熔化晶体硅。 然而，如果激光辐射直接入射到基本上透明的隔离元件和硅表面上，则穿过基本上透明的隔离元件的入射辐射的能量的可变部分将被转移到与隔离物接触的硅表面 元素取决于隔离元件的深度，从而引起硅的不可预测的额外加热，这将导致在达到熔融阈值温度的那些硅区域中达到熔体阈值温度所需的注量的不希望的变化。 为了防止这种情况，在发生激光辐射的整个选定区域的溢流之前，在所选择的区域上沉积电介质和高辐射吸收材料（例如二氧化硅和氮化钽）的顶层堆叠。 之后，熔融的硅已经冷却并重结晶，剥离高度辐射吸收材料的顶层。

公开(公告)号：US07731798B2

公开(公告)日：2010-06-08

申请号：US11001954

申请日：2004-12-01

申请人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

发明人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

IPC分类号： C23C16/00

CPC分类号： B23K26/703

摘要： A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.

摘要翻译： 公开了一种用于在激光热处理（LTP）期间支撑晶片并在晶片上保持恒定背景温度的卡盘。 卡盘包括散热器和加热器模块形式的热质量。 加热器模块与散热器热连通，但是通过绝热层在物理上与其分离。 热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗，而不是由辐射和对流损失。 顶板布置在加热器模块的顶部，支撑要处理的晶片，并提供污染屏障。 加热器模块耦合到电源，其适于向加热器模块提供变化量的功率，以将加热器模块保持在恒定的背景温度，即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。 因此，来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。 在没有激光加热的情况下，根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

公开(公告)号：US20090095724A1

公开(公告)日：2009-04-16

申请号：US12316013

申请日：2008-12-09

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/073 ,  B23K26/0853 ,  B23K2101/40 ,  H01L21/268

摘要： A method and apparatus for performing laser thermal processing (LTP) using one or more two-dimensional arrays of laser diodes and corresponding one or more LTP optical systems to form corresponding one or more line images. The line images are scanned across a substrate, e.g., by moving the substrate relative to the one or more line images. The apparatus also includes one or more recycling optical systems arranged to re-image reflected annealing radiation back onto the substrate. The use of one or more recycling optical systems greatly improves the heating efficiency and uniformity during LTP.

摘要翻译： 一种使用一个或多个激光二极管阵列和对应的一个或多个LTP光学系统进行激光热处理（LTP）的方法和装置，以形成对应的一个或多个线图像。 线图像跨基板扫描，例如通过相对于一个或多个线图像移动基板。 该装置还包括一个或多个再循环光学系统，其布置成将反射的退火辐射重新映射回衬底上。 使用一个或多个循环光学系统大大提高了LTP期间的加热效率和均匀性。

公开(公告)号：US20070051708A1

公开(公告)日：2007-03-08

申请号：US11592770

申请日：2006-11-03

申请人： Somit Talwar ,  David Markle

发明人： Somit Talwar ,  David Markle

IPC分类号： B23K26/06

CPC分类号： B23K26/0604 ,  B23K26/032 ,  B23K26/04 ,  B23K26/043 ,  B23K26/0643 ,  B23K26/0738 ,  B23K26/08 ,  B23K26/082 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324 ,  H01L22/10

摘要： Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

摘要翻译： 公开了用扫描激光辐射热处理衬底的装置和方法。 该装置包括连续辐射源和在衬底上形成图像的光学系统。 相对于基板表面扫描图像，使得处理区域中的每个点接收足以热处理该区域的辐射脉冲。

公开(公告)号：US07154066B2

公开(公告)日：2006-12-26

申请号：US10787664

申请日：2004-02-26

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： B23K26/08

CPC分类号： B23K26/0604 ,  B23K26/032 ,  B23K26/04 ,  B23K26/043 ,  B23K26/0643 ,  B23K26/0738 ,  B23K26/08 ,  B23K26/082 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324 ,  H01L22/10

摘要： Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

摘要翻译： 公开了用扫描激光辐射热处理衬底的装置和方法。 该装置包括连续辐射源和在衬底上形成图像的光学系统。 相对于基板表面扫描图像，使得处理区域中的每个点接收足以热处理该区域的辐射脉冲。