公开(公告)号：US20100126847A1

公开(公告)日：2010-05-27

申请号：US12697057

申请日：2010-01-29

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

IPC分类号： H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

摘要翻译： 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

公开(公告)号：US20070141729A1

公开(公告)日：2007-06-21

申请号：US11303729

申请日：2005-12-16

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

IPC分类号： H01L21/00 ,  C23F1/00 ,  H01L21/302 ,  G01L21/30

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

摘要翻译： 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

公开(公告)号：US07683289B2

公开(公告)日：2010-03-23

申请号：US11303729

申请日：2005-12-16

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

IPC分类号： B23K10/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

摘要翻译： 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

公开(公告)号：US08299390B2

公开(公告)日：2012-10-30

申请号：US12697057

申请日：2010-01-29

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

IPC分类号： B23K10/00

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

摘要翻译： 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

公开(公告)号：US20050264218A1

公开(公告)日：2005-12-01

申请号：US10855706

申请日：2004-05-28

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

IPC分类号： H01J37/32 ,  H01J7/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3299

摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.

摘要翻译： 处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。 或者通过第四匹配网络将60MHz施加到第二电极。 基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。 匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz信号源分离。 串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

公开(公告)号：US20050264219A1

公开(公告)日：2005-12-01

申请号：US10855707

申请日：2004-05-28

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

IPC分类号： H01J37/32 ,  H01J7/24

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

摘要翻译： 等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。 电极之间的RF激发等离子体在其上引起DC偏压。 底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。 中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

公开(公告)号：US07276135B2

公开(公告)日：2007-10-02

申请号：US10855707

申请日：2004-05-28

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

IPC分类号： C23F1/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

摘要翻译： 等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。 电极之间的RF激发等离子体在其上引起DC偏压。 底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。 中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

公开(公告)号：US20070012659A1

公开(公告)日：2007-01-18

申请号：US11525602

申请日：2006-09-21

申请人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

发明人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

IPC分类号： C03C25/68 ,  C23F1/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

公开(公告)号：US20060118518A1

公开(公告)日：2006-06-08

申请号：US10737022

申请日：2003-12-15

申请人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

发明人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

IPC分类号： B44C1/22 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：US08000082B2

公开(公告)日：2011-08-16

申请号：US12405906

申请日：2009-03-17

申请人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

发明人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

IPC分类号： H01L21/683 ,  H01T23/60

CPC分类号： H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

摘要翻译： 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔位于静电卡盘陶瓷层的座面上。 可以可选地将嵌入式极图案并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。