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31 条记录 (耗时 0.024 秒)

    High aspect ratio etch using modulation of RF powers of various frequencies
    3.
    发明授权
    High aspect ratio etch using modulation of RF powers of various frequencies 有权
    使用各种频率的RF功率调制的高纵横比蚀刻

    公开(公告)号：US07144521B2

    公开(公告)日：2006-12-05

    申请号：US10737022

    申请日：2003-12-15

    申请人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric A. Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

    发明人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric A. Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

    IPC分类号： B44C1/22

    CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

    摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

    摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

    Plasma processor in plasma confinement region within a vacuum chamber
    7.
    发明授权
    Plasma processor in plasma confinement region within a vacuum chamber 有权
    等离子体处理器在真空室内的等离子体约束区域

    公开(公告)号：US06984288B2

    公开(公告)日：2006-01-10

    申请号：US10032279

    申请日：2001-12-31

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Eric Lenz ,  Lumin Li

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01J37/32522 ,  H01J37/32082 ,  Y10S156/916

    摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

    摘要翻译： 用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。 该室包括在参考电位的壁和与壁间隔开的等离子体约束区域。 连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到 流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。

    HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN
    8.
    发明申请
    HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
    HARDMASK打开和调试配置控制与HARDMASK开放

    公开(公告)号：US20100327413A1

    公开(公告)日：2010-12-30

    申请号：US12595234

    申请日：2008-05-02

    申请人： Jong Pil Lee ,  Seiji Kawaguchi ,  Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

    发明人： Jong Pil Lee ,  Seiji Kawaguchi ,  Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

    IPC分类号： H01L29/00 ,  H01L21/3065 ,  C23F1/08 ,  H01L21/306

    CPC分类号： H01L21/31144 ,  H01L21/31122

    摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.

    摘要翻译： 提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。 硬掩模层设置在图案化掩模下方。 将基板放置在等离子体处理室中。 通过将包括COS组分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。 硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体还可以包括O 2。

    Etch profile control
    9.
    发明申请
    Etch profile control 有权
    蚀刻轮廓控制

    公开(公告)号：US20060226120A1

    公开(公告)日：2006-10-12

    申请号：US11095932

    申请日：2005-03-30

    申请人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

    发明人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

    IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/461

    CPC分类号： H01L21/31116

    摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

    摘要翻译： 提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。 将基板放置在等离子体处理室中。 包含O 2 2的蚀刻剂气体和包含H 2 S 2的至少一种的硫成分气体和含有至少一个碳硫键的化合物被提供到等离子体室中。 等离子体由蚀刻剂气体形成。 通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

    Methods of reducing photoresist distortion while etching in a plasma processing system
    10.
    发明授权
    Methods of reducing photoresist distortion while etching in a plasma processing system 有权
    在等离子体处理系统中蚀刻时减少光致抗蚀剂失真的方法

    公开(公告)号：US06942816B2

    公开(公告)日：2005-09-13

    申请号：US10366201

    申请日：2003-02-12

    申请人： Camelia Rusu ,  Mukund Srinivasan

    发明人： Camelia Rusu ,  Mukund Srinivasan

    IPC分类号： C23F1/00 ,  H01L20060101 ,  H01L21/00 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32

    CPC分类号： H01L21/31144

    摘要： A method for substantially reducing photoresist wiggling while etching a layer on a substrate is provided. The substrate having thereon the layer disposed below a photoresist mask is introduced into the plasma processing chamber. An etchant source gas mixture is flowed into the plasma processing chamber, where the etchant source gas mixture comprises xenon and an active etchant, where a flow rate of the xenon is at least 35% of etchant source gas mixture. A plasma is struck from the etchant source gas mixture. The layer is etched with the plasma, where the flow rate of xenon reduces photoresist wiggling.

    摘要翻译： 提供了一种在蚀刻衬底上的层的同时基本上减少光致抗蚀剂晃动的方法。 其上具有设置在光致抗蚀剂掩模下方的层的基板被引入等离子体处理室。 蚀刻剂源气体混合物流入等离子体处理室，其中蚀刻剂源气体混合物包括氙和活性蚀刻剂，其中氙的流速为蚀刻剂源气体混合物的至少35％。 从蚀刻剂源气体混合物中冲击出等离子体。 用等离子体蚀刻该层，其中氙气的流速减少光致抗蚀剂的晃动。