摘要:
A high optical density, i.e., .gtoreq.3.0, at 1 micron or less film thickness, black matrix is disclosed having improved stability and shelf life as a consequence of admixing Pigment Black 7 and organic dye or dye mixtures on a polyimide polymer vehicle.
摘要:
An organic black matrix having high resistivity (.gtoreq.10.sup.11 ohm/square), high optical density (.gtoreq.2.0) at ultra thin film thicknesses (.ltoreq.1.0 microns) for improved STN and TFT pixel display applications is made possible by combining polyimide/dye solutions and mixed metal oxide pigment dispersions at a weight/weight ratio of dye to pigment of 1:15 to 3:15. The need for low resistivity carbon black, as a replacement for sputtered chrome, is negated.
摘要:
Disclosed is a method of forming patterned electron beam resists from styrene-diene block copolymers and the resists formed thereby. A thin film of a styrene-diene block copolymer is applied to a support and is subjected to an electron beam scan. An electron beam irradiates a portion of the copolymer film according to a programmed pattern; the copolymer cross links where irradiated, thus causing the irradiated portion of the copolymer to become insoluble in a solvent. The balance of the copolymer remains soluble in the solvent, dissolves and is removed, resulting in the desired pattern of openings.
摘要:
A light absorbing medium to be interposed under photosensitive layers, such as a photo-resist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polymer vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photo-resist. The material reduces the losses due to defects and increases the yield of useable product.
摘要:
A light absorbing medium to be interposed under photosensitive layers, such as a photo-resist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polymer vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photo-resist. The material reduces the losses due to defects and increases the yield of useable product.
摘要:
Filters suitable for microelectronic uses and the like may be prepared directly on substrates either as monolithically integrated filters or as hybrid filters using a soluble dye material in a resin. The resin may be applied to microelectronic substrates and patterned by conventional microphotolithographic processes.
摘要:
The invention is an apparatus and method for making a polymer bolometer. The apparatus consists of a current supply and current receiving paths affixed to a substrate. Bridging the current supply paths and current receiving paths is an electrically conductive polymer. The polymer bolometer may be fabricated using conventional photolithographic techniques.
摘要:
Soluble conducting polymers from substituted polyanilines and large organic counterions are disclosed and used directly from solution in the manufacture of electronic devices.
摘要:
A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.
摘要:
The invention is a method and apparatus for a pirani pressure sensor. The apparatus consists of a current supply and current receiving means affixed to a substrate. Bridging the current supply means and current receiving means is an electrically conductive polymer. The pirani pressure sensor may be made using conventional photolithographic techniques.