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公开(公告)号：US09570165B2
公开(公告)日：2017-02-14
申请号：US14568011
申请日：2014-12-11
Applicant: Rambus Inc.
Inventor： Deepak Chandra Sekar , Gary Bela Bronner , Christophe J. Chevallier , Lidia Vereen , Philip F. S. Swab , Elizabeth Friend , Mehmet Gunhan Ertosun
CPC classification number: G11C13/004 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0088 , G11C2213/72 , G11C2213/78 , H01L27/2409 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
Abstract: A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element, and a two-terminal switching element. The first resistive memory element is electrically coupled to the second resistive memory element and to the switching element at a common node.
Abstract translation: 存储器件包括电阻存储器单元阵列。 阵列中的每个电阻性存储单元包括第一电阻存储器元件，第二电阻存储元件和两端开关元件。 第一电阻性存储器元件在公共节点处电耦合到第二电阻性存储器元件和电连接到开关元件。
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公开(公告)号：US20150162382A1
公开(公告)日：2015-06-11
申请号：US14568011
申请日：2014-12-11
Applicant: Rambus Inc.
Inventor： Deepak Chandra Sekar , Gary Bela Bronner , Christophe J. Chevallier , Lidia Vereen , Philip F.S. Swab , Elizabeth Friend , Mehmet Gunhan Ertosun
CPC classification number: G11C13/004 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0088 , G11C2213/72 , G11C2213/78 , H01L27/2409 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
Abstract: A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element, and a two-terminal switching element. The first resistive memory element is electrically coupled to the second resistive memory element and to the switching element at a common node.
Abstract translation: 存储器件包括电阻存储器单元阵列。 阵列中的每个电阻性存储单元包括第一电阻存储器元件，第二电阻存储元件和两端开关元件。 第一电阻性存储元件在公共节点处电耦合到第二电阻性存储器元件和电连接到开关元件。
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