公开(公告)号：US20120153048A1

公开(公告)日：2012-06-21

申请号：US13398814

申请日：2012-02-16

Applicant: John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

IPC: B05B7/26

CPC classification number: C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

Abstract translation: 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的安瓿。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

公开(公告)号：US20070131252A1

公开(公告)日：2007-06-14

申请号：US11456259

申请日：2006-07-10

Applicant: Ravi Laxman ,  Ashutosh Misra

Inventor： Ravi Laxman ,  Ashutosh Misra

IPC: B08B9/00 ,  B08B9/027 ,  B08B3/00

CPC classification number: C23G5/02 ,  C11D7/5009 ,  C11D11/0041 ,  C11D11/0047 ,  C23C16/4402 ,  C23C16/4407 ,  Y10S134/902

Abstract: Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

Abstract translation: 用于清洁使用烷基硅烷的沉积系统的组合物和方法在本文中描述。 在一个实施例中，清洁半导体制造系统的方法包括用包含至少一种烷基硅烷的溶剂冲洗该系统。 在另一个实施方案中，从半导体制造系统中去除至少一种化学前体的方法包括通过半导体制造系统强制含有至少一种烷基硅烷的溶剂并将至少一种化学前体溶解在溶剂中。 溶剂也可以含有不同烷基硅烷和其它有机溶剂的混合物。

公开(公告)号：US20090136668A1

公开(公告)日：2009-05-28

申请号：US12358723

申请日：2009-01-23

Applicant: John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

IPC: C23C16/44 ,  C23C16/54

CPC classification number: C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

Abstract translation: 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的阿姆空。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

公开(公告)号：US07300038B2

公开(公告)日：2007-11-27

申请号：US10858509

申请日：2004-06-01

Applicant: John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

IPC: C23C16/00

CPC classification number: C23C16/4481 ,  Y10S261/65

Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container. For at least one disclosed embodiment, gas resulting from contact of received gas with vaporized material may be delivered to atomic layer deposition (ALD) process equipment.

Abstract translation: 结构有助于在具有增加的暴露表面积的容器中支撑材料，以帮助促进气体与气化材料的接触。 对于至少一个所公开的实施例，该结构可以帮助以与材料放置在结构处的形式相同的形式来支撑用于汽化的材料。 对于至少一个公开的实施例，该结构可以帮助支撑具有相对于没有结构的材料在容器中静置的最大暴露表面积的增加的暴露表面积的材料。 对于至少一个公开的实施例，除了容器的内部区域的底部表面之外，该结构可以在容器的内部区域中限定一个或多个材料支撑表面。 对于至少一个所公开的实施例，结构可以在容器的内部区域中限定一个或多个材料支撑表面，其总表面积大于容器内部区域的底部表面的表面积。 对于至少一个公开的实施例，由接收的气体与气化材料的接触产生的气体可以被输送到原子层沉积（ALD）工艺设备。

公开(公告)号：US20070062270A1

公开(公告)日：2007-03-22

申请号：US11458565

申请日：2006-07-19

Applicant: Ashutosh Misra ,  Benjamin Jurcik ,  Ravi Laxman

Inventor： Ashutosh Misra ,  Benjamin Jurcik ,  Ravi Laxman

IPC: G01F17/00

CPC classification number: G01G23/3728 ,  G01G17/04

Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

Abstract translation: 本文描述了一种用于监测化学品用途的化学储存装置和方法。 该装置和公开的方法利用集成到一个可运输单元中的化学储存罐和负载单元。 称重传感器能够补偿在半导体工业中使用的附加分配装置的附加重量。 此外，当从化学品存储装置中取出化学品时，称重传感器连续地显示化学品的重量。 这些功能包括在负载传感器本身中的负载传感器的控制逻辑中。

公开(公告)号：US20050038276A1

公开(公告)日：2005-02-17

申请号：US10937434

申请日：2004-09-09

Applicant: Ravi Laxman ,  Chongying Xu ,  Thomas Baum

Inventor： Ravi Laxman ,  Chongying Xu ,  Thomas Baum

IPC: C07F7/08 ,  C07F7/18 ,  C23C16/30 ,  C07F7/04 ,  H01L21/31 ,  C08J7/04 ,  H01L21/469

CPC classification number: C23C16/30 ,  C07F7/0838 ,  C07F7/1896

Abstract: A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.

Abstract translation: 使用具有至少一个烷基和至少一个可裂解的有机官能团的有机硅前体组合物生产低介电常数的SiOC薄膜的CVD方法，当被激活重新排列并且作为高挥发性液体或气态副产物裂解时。 在第一步骤中，由具有至少一个烷基和至少一个可切割的有机官能团的有机硅前体CVD沉积致密的SiOC薄膜，其中保留有至少一部分烷基和可裂解的有机官能团。 在第二步骤中，将致密的SiOC薄膜进行后退火以有效地除去挥发性液体或气态副产物，导致多孔低介电常数SiOC薄膜。 多孔，低介电常数的SiOC薄膜可用作微电子器件结构中的绝缘层。 使用二（格式）二甲基硅烷作为有机硅前体制备优选的多孔，低介电SiOC薄膜。

公开(公告)号：US20080041310A1

公开(公告)日：2008-02-21

申请号：US11846394

申请日：2007-08-28

Applicant: John Gregg ,  Scott Battle ,  Jeffrey Banton ,  Donn Naito ,  Ravi Laxman

Inventor： John Gregg ,  Scott Battle ,  Jeffrey Banton ,  Donn Naito ,  Ravi Laxman

IPC: C23C16/00

CPC classification number: C23C16/4481 ,  Y10S261/65

Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable mateiral disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resuting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment.

Abstract translation: 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发的材料。 容器可以包括具有可移除顶部的阿姆空。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 引入气体与蒸发材料接触的产物气体可以被递送到原子层沉积（ALD）或类似的工艺设备。

公开(公告)号：US07293569B2

公开(公告)日：2007-11-13

申请号：US11456259

申请日：2006-07-10

Applicant: Ravi Laxman ,  Ashutosh Misra ,  Jean-Marc Girard

Inventor： Ravi Laxman ,  Ashutosh Misra ,  Jean-Marc Girard

IPC: B08B9/00

CPC classification number: C23G5/02 ,  C11D7/5009 ,  C11D11/0041 ,  C11D11/0047 ,  C23C16/4402 ,  C23C16/4407 ,  Y10S134/902

Abstract: Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

Abstract translation: 用于清洁使用烷基硅烷的沉积系统的组合物和方法在本文中描述。 在一个实施例中，清洁半导体制造系统的方法包括用包含至少一种烷基硅烷的溶剂冲洗该系统。 在另一个实施方案中，从半导体制造系统中去除至少一种化学前体的方法包括通过半导体制造系统强制含有至少一种烷基硅烷的溶剂并将至少一种化学前体溶解在溶剂中。 溶剂也可以含有不同烷基硅烷和其它有机溶剂的混合物。

公开(公告)号：US20060235182A1

公开(公告)日：2006-10-19

申请号：US11452875

申请日：2006-06-14

Applicant: Chongying Xu ,  Thomas Baum ,  Alexander Borovik ,  Ziyun Wang ,  James Lin ,  Scott Battle ,  Ravi Laxman

Inventor： Chongying Xu ,  Thomas Baum ,  Alexander Borovik ,  Ziyun Wang ,  James Lin ,  Scott Battle ,  Ravi Laxman

IPC: C08G77/04 ,  C08G77/34 ,  B32B9/04

CPC classification number: C23C16/4402 ,  B01D3/36 ,  C07F7/089 ,  C07F7/20 ,  C08G77/34 ,  C09D4/00 ,  C23C16/401 ,  C08G77/04

Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

公开(公告)号：US20050006799A1

公开(公告)日：2005-01-13

申请号：US10858509

申请日：2004-06-01

Applicant: John Gregg ,  Scott Battle ,  Jeffrey Banton ,  Donn Naito ,  Ravi Laxman

Inventor： John Gregg ,  Scott Battle ,  Jeffrey Banton ,  Donn Naito ,  Ravi Laxman

IPC: B01F3/04 ,  C23C16/448

CPC classification number: C23C16/4481 ,  Y10S261/65

Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container. For at least one disclosed embodiment, gas resulting from contact of received gas with vaporized material may be delivered to atomic layer deposition (ALD) process equipment.

Abstract translation: 结构有助于在具有增加的暴露表面积的容器中支撑材料，以帮助促进气体与气化材料的接触。 对于至少一个所公开的实施例，该结构可以帮助以与材料放置在结构处的形式相同的形式来支撑用于汽化的材料。 对于至少一个公开的实施例，该结构可以帮助支撑具有相对于没有结构的材料在容器中静置的最大暴露表面积的增加的暴露表面积的材料。 对于至少一个公开的实施例，除了容器的内部区域的底部表面之外，该结构可以在容器的内部区域中限定一个或多个材料支撑表面。 对于至少一个公开的实施例，该结构可以在容器的内部区域中限定一个或多个材料支撑表面，其总表面积大于容器内部区域的底部表面的表面积。 对于至少一个公开的实施例，由接收的气体与气化材料的接触产生的气体可以被输送到原子层沉积（ALD）工艺设备。