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1.发明授权Light emitting diode device comprising a luminescent substrate that performs phosphor conversion 有权发光二极管装置，其包括进行磷光体转换的发光基板公开(公告)号：US06630691B1
公开(公告)日：2003-10-07
申请号：US09407231
申请日：1999-09-27
IPC分类号： H01L2715
摘要： The present invention provides an LED device comprising a phosphor-converting substrate that converts primary light emitted by the LED, which is blue light, into one or more other wavelengths of light, which then combine with unconverted primary light to produce white light. The substrate is a single crystal phosphor having desired luminescent properties. The single crystal phosphor has the necessary lattice structure to promote single crystalline growth of the light-emitting structure of the LED device. Moreover, the thermo-mechanical properties of the substrate are such that the introduction of excessive strain or cracks in the epitaxial films of the LED device is prevented. The characteristics of the substrate, i.e., the dopant concentration and thickness, are capable of being precisely controlled and tested before the LED device is fabricated so that the fraction of primary light that passes through the substrate without being converted is predictable and controllable. Likewise, the fraction of primary light that is converted by the substrate into one or more other wavelengths is predictable and controllable. By precisely controlling these fractions, phosphor-converted LED devices can be achieved that produce uniform, high-quality white light.
摘要翻译： 本发明提供了一种LED装置，其包括将由蓝光发出的LED的一次光转换成一个或多个其它波长的光的磷光体转换基板，然后将其与未转换的初级光结合以产生白光。 基板是具有所需发光特性的单晶荧光体。 单晶荧光体具有必要的晶格结构，以促进LED器件的发光结构的单晶生长。 此外，基板的热机械性能使得防止在LED器件的外延膜中引入过大的应变或裂纹。 在制造LED器件之前，衬底的特性，即掺杂剂浓度和厚度能够被精确地控制和测试，使得通过衬底而不被转换的初级光的分数是可预测的和可控的。 类似地，由衬底转换成一个或多个其它波长的原始光的分数是可预测的和可控的。 通过精确地控制这些部分，可以实现产生均匀的高质量白光的磷光体转换的LED器件。
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公开(公告)号：US4884887A
公开(公告)日：1989-12-05
申请号：US6396
申请日：1987-01-23
申请人： David A. Vanderwater
发明人： David A. Vanderwater
CPC分类号： G01B11/26 , G01N21/84 , G01N2021/8477 , G01N21/4788
摘要： An apparatus is disclosed for use with a device for processing a crystal having crystallographic axes and crystallographic facets on its surface. A light beam is supplied towards the facets where the light beam has a selected spatial relationship to the device. The directions of reflections of the light beam from the facets are detected to determine the spatial relationship between one crystallographic axis and the processing device so that the body is processable using the device in reference to the crystallographic axis. A U-shaped member is placed with its open ends in contact with or adjacent to a reference surface of the processing device. The U-shaped member encloses and is urged against the body when the body is rotated about a reference direction of the device The U-shaped member is of such dimensions that the surface portions of the body at distances smaller than a predetermined distance will cause both ends of the member to contact the reference surface.
摘要翻译： 公开了一种与用于处理其表面上具有结晶轴和晶面的晶体的装置一起使用的装置。 朝向小平面供应光束，其中光束与设备具有选定的空间关系。 检测来自小平面的光束的反射方向以确定一个结晶轴与处理装置之间的空间关系，使得使用该装置参照晶体轴可以处理本体。 U形构件被放置成其开口端与处理装置的参考表面接触或邻近处理装置的参考表面。 当身体围绕设备的参考方向旋转时，U形构件包围并被推靠在身体上.U形构件具有这样的尺寸，使得身体的距离小于预定距离的表面部分将导致两者 构件的端部与参考面接触。
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3.发明授权Method for bonding compounds semiconductor wafers to create an ohmic interface 失效用于将化合物半导体晶片接合以产生欧姆界面的方法
公开(公告)号：US5783477A
公开(公告)日：1998-07-21
申请号：US835948
申请日：1997-04-14
CPC分类号： H01L21/187 , H01L33/0079 , H01L2924/12041
摘要： A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
摘要翻译： 公开了一种在没有金属中间层的单极（同种型）化合物半导体晶片之间形成欧姆界面的方法以及用这些欧姆接口形成的半导体器件。 欧姆接口通过同时匹配晶片表面的晶体取向和两个晶片的表面内的旋转对准，然后在高温下施加单轴压力以形成接合的欧姆界面而形成。 这种欧姆接口对于其中电流从一个接合晶片传递到另一个的器件的实际实现是必需的。
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4.发明授权Method for bonding compound semiconductor wafers to create an ohmic interface 失效用于接合化合物半导体晶片以产生欧姆界面的方法
公开(公告)号：US5661316A
公开(公告)日：1997-08-26
申请号：US718223
申请日：1996-09-20
IPC分类号： H01L21/205 , H01L21/18 , H01L33/00 , H01S5/02 , H01S5/042 , H01L21/302
CPC分类号： H01L33/0062 , H01L21/187 , H01S5/0215 , H01S5/0421
摘要： A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
摘要翻译： 公开了一种在没有金属中间层的单极（同种型）化合物半导体晶片之间形成欧姆界面的方法以及用这些欧姆接口形成的半导体器件。 欧姆接口通过同时匹配晶片表面的晶体取向和两个晶片的表面内的旋转对准，然后使其在高温下施加单轴压力以形成结合的欧姆界面而形成。 这种欧姆接口对于其中电流从一个接合晶片传递到另一个的器件的实际实现是必需的。
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