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1.发明申请公开(公告)号：US20090245723A1
公开(公告)日：2009-10-01
申请号：US12393633
申请日：2009-02-26
申请人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
发明人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
IPC分类号： G02B6/12
CPC分类号： G02B6/1228 , G02B6/125 , G02B2006/12061
摘要： An optical waveguide circuit includes: a lower cladding layer formed on a substrate; a first optical waveguide formed on the lower cladding layer so as to partition the lower cladding layer into a first portion and a second portion; a second optical waveguide formed on the first portion, the second optical waveguide including a tip end portion directed toward a side face of the first optical waveguide, the tip end portion being narrowed in a tapered manner; and a third optical waveguide formed on the second portion, the third optical waveguide including a tip end portion directed toward the tip end portion of the second optical waveguide, a tip end portion of the third optical waveguide being narrowed in a tapered manner.
摘要翻译： 光波导电路包括：形成在基板上的下包层; 第一光波导，其形成在下包层上，以将下包层分隔成第一部分和第二部分; 形成在所述第一部分上的第二光波导，所述第二光波导包括朝向所述第一光波导的侧面的前端部，所述前端部以锥形变窄; 以及形成在所述第二部分上的第三光波导，所述第三光波导包括朝向所述第二光波导的前端部的前端部，所述第三光波导的前端部以锥形变窄。
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2.发明授权Optical waveguide circuit and multi-core central processing unit using the same 有权光波导电路和多核心中央处理单元采用相同的方式公开(公告)号：US08068704B2
公开(公告)日：2011-11-29
申请号：US12393633
申请日：2009-02-26
申请人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
发明人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
IPC分类号： G02B6/12
CPC分类号： G02B6/1228 , G02B6/125 , G02B2006/12061
摘要： An optical waveguide circuit includes: a lower cladding layer formed on a substrate; a first optical waveguide formed on the lower cladding layer so as to partition the lower cladding layer into a first portion and a second portion; a second optical waveguide formed on the first portion, the second optical waveguide including a tip end portion directed toward a side face of the first optical waveguide, the tip end portion being narrowed in a tapered manner; and a third optical waveguide formed on the second portion, the third optical waveguide including a tip end portion directed toward the tip end portion of the second optical waveguide, a tip end portion of the third optical waveguide being narrowed in a tapered manner.
摘要翻译： 光波导电路包括：形成在基板上的下包层; 第一光波导，其形成在下包层上，以将下包层分隔成第一部分和第二部分; 形成在所述第一部分上的第二光波导，所述第二光波导包括朝向所述第一光波导的侧面的前端部，所述尖端部以锥形变窄; 以及形成在所述第二部分上的第三光波导，所述第三光波导包括朝向所述第二光波导的前端部的前端部，所述第三光波导的前端部以锥形变窄。
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公开(公告)号：US07830937B2
公开(公告)日：2010-11-09
申请号：US12191181
申请日：2008-08-13
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。
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公开(公告)号：US20070047607A1
公开(公告)日：2007-03-01
申请号：US11387315
申请日：2006-03-23
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。
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公开(公告)号：US20080317081A1
公开(公告)日：2008-12-25
申请号：US12191181
申请日：2008-08-13
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。
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公开(公告)号：US07426228B2
公开(公告)日：2008-09-16
申请号：US11387315
申请日：2006-03-23
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。
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7.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开半导体发光装置，散热器和制造半导体发光装置的方法公开(公告)号：US20120273794A1
公开(公告)日：2012-11-01
申请号：US13407191
申请日：2012-02-28
申请人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
发明人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0217 , H01S5/3201 , H01S5/3211 , H01S5/3428 , H01S5/34333 , H01S5/4037 , H01S5/4056 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，有源层和第二半导体层。 第一层具有第一上表面和第一侧面。 有源层具有覆盖第一上表面并具有第二上表面的第一部分和覆盖第一侧表面并具有第二侧表面的第二部分。 第二层具有覆盖第二上表面的第三部分和覆盖第二侧表面的第四部分。 第一层和第二层包括氮化物半导体。 沿着层叠方向的第一部分沿着从第一侧面朝向第二侧面的方向具有比第二部分厚的厚度。 沿堆叠方向的第三部分沿着该方向具有比第四部分厚的厚度。
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公开(公告)号：US20120056524A1
公开(公告)日：2012-03-08
申请号：US13034128
申请日：2011-02-24
申请人： Shinji SAITO , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
发明人： Shinji SAITO , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
IPC分类号： H01J1/63
CPC分类号： H05B33/145
摘要： A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion.
摘要翻译： 根据一个实施例的发光体具有纤维形状。 并且它包括含有发光材料的芯部分，该材料吸收激发光并发射具有比激发光的波长更长的波长的光。 并且还包括设置在芯部外侧的包层部分，所述包层部分具有第一区域和第二区域，所述第二区域周期性地形成在所述第一区域中，所述第二区域的折射率高于第一区域的折射率 第一区域的折射率等于或高于芯部分的折射率。
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公开(公告)号：US07276735B2
公开(公告)日：2007-10-02
申请号：US10884141
申请日：2004-07-02
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L29/201
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.
摘要翻译： 使用GaAs衬底提供了用于长波长的低成本高性能光学半导体元件。 该光学半导体元件包括具有彼此相对的第一表面和第二表面的GaAs衬底，具有第一表面和第二表面的第二表面， 形成在基板的第一表面上的1-k N N（0 <= j <= 1，0.002 <= k <= 0.05），形成在基板的第一表面上的第一导电型覆盖层 所述缓冲层，形成在所述第一导电型覆盖层上的有源层，并且包括阱层，所述阱层具有In（z） ），所述阱层具有比所述第一导电型覆盖层更小的带隙，所述有源层的厚度大于其基于平衡理论的基板的临界厚度，以及形成在所述有源层上的第二导电型覆盖层和 具有比阱层更大的带隙。
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公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。
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