公开(公告)号：US20070047607A1

公开(公告)日：2007-03-01

申请号：US11387315

申请日：2006-03-23

申请人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

发明人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18394 ,  H01S5/2063

摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

公开(公告)号：US07830937B2

公开(公告)日：2010-11-09

申请号：US12191181

申请日：2008-08-13

申请人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

发明人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18394 ,  H01S5/2063

摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

公开(公告)号：US20080317081A1

公开(公告)日：2008-12-25

申请号：US12191181

申请日：2008-08-13

申请人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

发明人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

IPC分类号： H01S5/18 ,  H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18394 ,  H01S5/2063

摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

公开(公告)号：US07426228B2

公开(公告)日：2008-09-16

申请号：US11387315

申请日：2006-03-23

申请人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

发明人： Mitsuhiro Kushibe ,  Mizunori Ezaki ,  Rei Hashimoto ,  Michihiko Nishigaki

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18394 ,  H01S5/2063

摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

摘要翻译： 可以将电流基本均匀地注入电流限制区域。 表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。 电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

公开(公告)号：US20060187997A1

公开(公告)日：2006-08-24

申请号：US11332043

申请日：2006-01-13

申请人： Mizunori Ezaki ,  Mitsuhiro Kushibe ,  Michihiko Nishigaki ,  Keiji Takaoka

发明人： Mizunori Ezaki ,  Mitsuhiro Kushibe ,  Michihiko Nishigaki ,  Keiji Takaoka

IPC分类号： H01S3/08

CPC分类号： H01S5/18355 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/3202 ,  H01S2301/176

摘要： It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.

摘要翻译： 即使在具有平面取向（100）面等的普通基板上制造垂直空腔表面发射激光二极管，也可以获得在极化模式下具有高可控性的高性能。 垂直腔表面发射激光二极管包括：衬底; 半导体有源层，其形成在所述基板上并具有发光区域; 夹着半导体活性层的第一反射镜和第二反射镜; 第一凹部，其具有从第一反射镜的最外层至少穿透半导体活性层的第一凹槽深度; 第二凹槽，具有比第一凹槽深度浅的第二凹槽深度; 由第一和第二凹部包围的台面部分; 以及埋设在第一凹部中的绝缘膜。

公开(公告)号：US07244629B2

公开(公告)日：2007-07-17

申请号：US10978346

申请日：2004-11-02

申请人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

发明人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

IPC分类号： H01L21/00 ,  H01L31/00 ,  H01S5/00

CPC分类号： H01S5/18355 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/3201 ,  H01S5/3202 ,  H01S2301/176

摘要： In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.

摘要翻译： 在具有（100）取向平面等的非偏角基板上制造的垂直腔表面发射激光二极管中，通过在Al中形成不对称的氧化结构，向有源层的中心部分施加各向异性的应力 台面中的高浓度部分，从而可以提高装置的极化控制性。

公开(公告)号：US07068696B2

公开(公告)日：2006-06-27

申请号：US10720515

申请日：2003-11-25

申请人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

发明人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

IPC分类号： H01S5/00

CPC分类号： H01S5/18313 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/2063 ,  H01S5/3201 ,  H01S2301/166 ,  H01S2301/176

摘要： A vertical-cavity surface emitting laser diode comprises: a first and a second reflectors; an active layer provided between the first and the second reflectors; and an oxidizee layer having a non-oxidized part and an oxidized part provided around the non-oxidized part. An electric current is injected into the non-oxidized part. The oxidizee layer has a proton-containing part including proton at least at a position substantially enclosing the non-oxidized part.

摘要翻译： 垂直腔表面发射激光二极管包括：第一和第二反射器; 设置在第一和第二反射器之间的有源层; 以及具有非氧化部分和设置在非氧化部分周围的氧化部分的氧化层。 向非氧化部分注入电流。 至少在基本上包围非氧化部分的位置处，氧化层具有包含质子的含质子部分。

公开(公告)号：US20050121678A1

公开(公告)日：2005-06-09

申请号：US10978346

申请日：2004-11-02

申请人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

发明人： Mizunori Ezaki ,  Michihiko Nishigaki ,  Keiji Takaoka

IPC分类号： H01L21/00 ,  H01L21/3205 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01S5/183 ,  H01S5/32 ,  H01L33/00

CPC分类号： H01S5/18355 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/3201 ,  H01S5/3202 ,  H01S2301/176

摘要： In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.

摘要翻译： 在具有（100）取向平面等的非偏角基板上制造的垂直腔表面发射激光二极管中，通过在Al中形成不对称的氧化结构，向有源层的中心部分施加各向异性的应力 台面中的高浓度部分，从而可以提高装置的极化控制性。

公开(公告)号：US20090245723A1

公开(公告)日：2009-10-01

申请号：US12393633

申请日：2009-02-26

申请人： Rei Hashimoto ,  Haruhiko Yoshida ,  Mizunori Ezaki

发明人： Rei Hashimoto ,  Haruhiko Yoshida ,  Mizunori Ezaki

IPC分类号： G02B6/12

CPC分类号： G02B6/1228 ,  G02B6/125 ,  G02B2006/12061

摘要： An optical waveguide circuit includes: a lower cladding layer formed on a substrate; a first optical waveguide formed on the lower cladding layer so as to partition the lower cladding layer into a first portion and a second portion; a second optical waveguide formed on the first portion, the second optical waveguide including a tip end portion directed toward a side face of the first optical waveguide, the tip end portion being narrowed in a tapered manner; and a third optical waveguide formed on the second portion, the third optical waveguide including a tip end portion directed toward the tip end portion of the second optical waveguide, a tip end portion of the third optical waveguide being narrowed in a tapered manner.

摘要翻译： 光波导电路包括：形成在基板上的下包层; 第一光波导，其形成在下包层上，以将下包层分隔成第一部分和第二部分; 形成在所述第一部分上的第二光波导，所述第二光波导包括朝向所述第一光波导的侧面的前端部，所述前端部以锥形变窄; 以及形成在所述第二部分上的第三光波导，所述第三光波导包括朝向所述第二光波导的前端部的前端部，所述第三光波导的前端部以锥形变窄。

公开(公告)号：US08068704B2

公开(公告)日：2011-11-29

申请号：US12393633

申请日：2009-02-26

申请人： Rei Hashimoto ,  Haruhiko Yoshida ,  Mizunori Ezaki

发明人： Rei Hashimoto ,  Haruhiko Yoshida ,  Mizunori Ezaki

IPC分类号： G02B6/12

CPC分类号： G02B6/1228 ,  G02B6/125 ,  G02B2006/12061

摘要： An optical waveguide circuit includes: a lower cladding layer formed on a substrate; a first optical waveguide formed on the lower cladding layer so as to partition the lower cladding layer into a first portion and a second portion; a second optical waveguide formed on the first portion, the second optical waveguide including a tip end portion directed toward a side face of the first optical waveguide, the tip end portion being narrowed in a tapered manner; and a third optical waveguide formed on the second portion, the third optical waveguide including a tip end portion directed toward the tip end portion of the second optical waveguide, a tip end portion of the third optical waveguide being narrowed in a tapered manner.

摘要翻译： 光波导电路包括：形成在基板上的下包层; 第一光波导，其形成在下包层上，以将下包层分隔成第一部分和第二部分; 形成在所述第一部分上的第二光波导，所述第二光波导包括朝向所述第一光波导的侧面的前端部，所述尖端部以锥形变窄; 以及形成在所述第二部分上的第三光波导，所述第三光波导包括朝向所述第二光波导的前端部的前端部，所述第三光波导的前端部以锥形变窄。