公开(公告)号：US10008919B2

公开(公告)日：2018-06-26

申请号：US15043253

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: G05F1/565 ,  G05F1/00 ,  H03K17/687 ,  H02M1/088 ,  H01L27/06 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H01L29/40 ,  H01L29/08 ,  H01L29/423

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.

公开(公告)号：US20160164398A1

公开(公告)日：2016-06-09

申请号：US15043253

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: H02M1/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.

Abstract translation: 一种控制对包括具有高侧驱动电路的第一区域，具有信号处理电路的第二区域，低侧驱动电路和电压控制电路的第一区域的半导体器件的电源的控制方法以及形成在 第一和第二区域并具有整流元件，包括将第一控制信号接通到电压控制电路，将第一控制信号切断到电压控制电路，并重复第一控制信号的接通和关断 第一个控制信号。

公开(公告)号：US09287256B2

公开(公告)日：2016-03-15

申请号：US14517657

申请日：2014-10-17

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H03K17/687

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.

Abstract translation: 提供了包括第一导电类型的衬底，第一电路区域，分离区域，第二电路区域和整流元件的半导体器件。 整流元件具有第二导电类型层，第一高浓度第二导电类型区域，第二高浓度第二导电类型区域，元件隔离膜，第一绝缘层和第一导电膜。 第一触点耦合到第一高浓度第二导电类型区域，第二触点耦合到第二高浓度第二导电类型区域。 第三触点耦合到第一导电膜。 第一触点，第二触点和第三触点彼此分离。