公开(公告)号：US20170278722A1

公开(公告)日：2017-09-28

申请号：US15621226

申请日：2017-06-13

Applicant: Renesas Electronics Corporation

Inventor： Toshihiko AKIBA ,  Hiromi SHIGIHARA ,  Kei YAJIMA

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/525

CPC classification number: H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

公开(公告)号：US20160133484A1

公开(公告)日：2016-05-12

申请号：US14886088

申请日：2015-10-18

Applicant: Renesas Electronics Corporation

Inventor： Toshihiko AKIBA ,  Hiromi SHIGIHARA ,  Kei YAJIMA

IPC: H01L21/48

CPC classification number: H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

Abstract translation: 提供了可以实现尺寸减小的可靠性提高的半导体器件。 提供一种半导体晶片，其具有第一绝缘构件，该第一绝缘构件具有暴露于电极焊盘的上表面的开口。 随后，在半导体晶片的主表面上形成第二绝缘构件之后，形成另一个开口以露出电极焊盘的上表面。 然后，使探针与电极焊盘接触，将数据写入半导体晶片的主表面的存储电路。 在用导电覆盖膜覆盖电极焊盘的上表面之后，形成重定位布线。 在Y方向上，位于电极焊盘正上方的位移线的宽度等于或小于形成在第一绝缘构件中的开口的宽度。