公开(公告)号：US20160133484A1

公开(公告)日：2016-05-12

申请号：US14886088

申请日：2015-10-18

Applicant: Renesas Electronics Corporation

Inventor： Toshihiko AKIBA ,  Hiromi SHIGIHARA ,  Kei YAJIMA

IPC: H01L21/48

CPC classification number: H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

Abstract translation: 提供了可以实现尺寸减小的可靠性提高的半导体器件。 提供一种半导体晶片，其具有第一绝缘构件，该第一绝缘构件具有暴露于电极焊盘的上表面的开口。 随后，在半导体晶片的主表面上形成第二绝缘构件之后，形成另一个开口以露出电极焊盘的上表面。 然后，使探针与电极焊盘接触，将数据写入半导体晶片的主表面的存储电路。 在用导电覆盖膜覆盖电极焊盘的上表面之后，形成重定位布线。 在Y方向上，位于电极焊盘正上方的位移线的宽度等于或小于形成在第一绝缘构件中的开口的宽度。

公开(公告)号：US20130313708A1

公开(公告)日：2013-11-28

申请号：US13952596

申请日：2013-07-27

Applicant: Renesas Electronics Corporation

Inventor： Hiromi SHIGIHARA ,  Hiroshi TSUKAMOTO ,  Akira YAJIMA

IPC: H01L23/498 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract translation: 在用于车辆用途的半导体集成电路器件中，半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片，经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜（金基金属镀膜），以及 用于在电镀表面膜和设置在布线板（布线基板）上的外部引线之间互连的金接合线（金基接合线）。

公开(公告)号：US20170278722A1

公开(公告)日：2017-09-28

申请号：US15621226

申请日：2017-06-13

Applicant: Renesas Electronics Corporation

Inventor： Toshihiko AKIBA ,  Hiromi SHIGIHARA ,  Kei YAJIMA

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/525

CPC classification number: H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

公开(公告)号：US20160240484A1

公开(公告)日：2016-08-18

申请号：US15139825

申请日：2016-04-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/532 ,  H01L23/29 ,  H01L23/00

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。

公开(公告)号：US20140021618A1

公开(公告)日：2014-01-23

申请号：US13924938

申请日：2013-06-24

Applicant: Renesas Electronics Corporation

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。