公开(公告)号：US6060871A

公开(公告)日：2000-05-09

申请号：US174222

申请日：1998-10-16

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: G05F1/56 ,  G05F1/565 ,  G05F1/575 ,  G05F1/40

CPC classification number: G05F1/565 ,  G05F1/575

Abstract: A stable voltage regulator circuit of simple circuit configuration 174,222 includes a differential amplifier (M2, M3) which is powered from a supply line (1) at a nominal voltage level (Vin), by being coupled between the supply line and a return line (2). A reference device (M1) is coupled to a first input (4) of the differential amplifier (M2, M3) for defining a desired output voltage (Vca) on an output line (3) coupled to an output (6) of the differential amplifier (M2, M3). The differential amplifier (M2, M3) is coupled to the return line (2) by a varying current source (M4) which feeds a varying bias current to the differential amplifier (M2, M3) and which is controlled from the supply line (1) in accordance with variations in the nominal voltage level (Vin) on the supply line (1). The varying bias current to the differential amplifier (M2, M3) provides a first-order compensation of the output voltage (Vca) for these voltage variations on the supply line (1). A second-order compensation is provided by a feedback coupling (R7, R8) from the output line (3) to the second input (5) of the differential amplifier (M2, M3).

Abstract translation: 简单电路配置174,222的稳定稳压电路包括通过耦合在供电线和返回线之间的以标称电压电平（Vin）从供电线（1）供电的差动放大器（M2，M3） 2）。 参考装置（M1）耦合到差分放大器（M2，M3）的第一输入端（4），用于在耦合到差分放大器的输出端（6）的输出线（3）上限定期望输出电压（Vca） 放大器（M2，M3）。 差分放大器（M2，M3）通过改变的电流源（M4）耦合到返回线（2），该电流源将变化的偏置电流馈送到差分放大器（M2，M3），并且从供电线（1 ）根据电源线（1）上的额定电压电平（Vin）的变化。 到差分放大器（M2，M3）的变化的偏置电流为电源线（1）上的这些电压变化提供了输出电压（Vca）的一阶补偿。 通过从差分放大器（M2，M3）的输出线（3）到第二输入（5）的反馈耦合（R7，R8）提供二阶补偿。

公开(公告)号：US06144085A

公开(公告)日：2000-11-07

申请号：US377359

申请日：1999-08-19

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/0696 ,  H01L27/0211 ,  H01L29/7395 ,  H01L29/7802

Abstract: A power transistor device, for example a MOSFET or an IGBT, comprises a semiconductor body (10) which accommodates an array (11) of parallel device cells (1a) in which heat is generated in operation of the device. A hot-location temperature sensor (Mh) is located inside the array (11), and a cool-location temperature sensor (Mc) is located outside the array (11). These sensors each comprises at least one sensor cell (1b; 1c) which is of the same transistor type as the device cells (1a). The sensor cells (1b; 1c) have a cellular region structure (12,13,14,15) similar to that of the device cells (1a), but each sensor (Mh; Mc) has a respective output electrode (31; 32) separate from electrodes (22,23,25) of the device cells (1a). A detection circuit (100,101) is coupled to the respective output electrodes (31; 32) of the hot-location and cool-location temperature sensors (Mh; Mc) for detecting a temperature difference between the hot and cool locations by comparing voltage signals (dV(T)) from the output electrodes (31; 32).

Abstract translation: 功率晶体管器件，例如MOSFET或IGBT，包括半导体本体（10），其容纳并联器件单元（1a）的阵列（11），在器件的操作中产生热量。 热位置温度传感器（Mh）位于阵列（11）的内部，并且冷却位置温度传感器（Mc）位于阵列（11）外部。 这些传感器每个包括与器件单元（1a）相同晶体管类型的至少一个传感器单元（1b; 1c）。 传感器单元（1b; 1c）具有类似于器件单元（1a）的细胞区域结构（12,13,14,15），但每个传感器（Mh; Mc）具有相应的输出电极（31; 32） ）与器件单元（1a）的电极（22,23,25）分离。 检测电路（100,101）耦合到热定位和冷定位温度传感器（Mh; Mc）的相应输出电极（31; 32），用于通过比较电压信号（...）来检测热位置与冷位置之间的温度差 dV（T））。

公开(公告)号：US07932769B2

公开(公告)日：2011-04-26

申请号：US12315649

申请日：2008-12-05

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: H03K17/687

CPC classification number: H03K17/0822 ,  Y10T307/74

Abstract: A power insulated gate field effect transistor has main cells (2) controlled by a main cell insulated gate and sense cells (4) controlled by a sense cell insulated gate. A sample and hold circuit (10, 50) is arranged to operate in a plurality of states including at least one sample state and a hold state to sense the current flowing through the sense cells (4) when in the at least one sample state but not in the hold state. The sample states may be used in a feedback loop to control a drive amplifier (20) driving the gates of the main and sense cells (2,4) and/or to mirror the current in the sense cells (4) on a measurement output terminal (58).

Abstract translation: 功率绝缘栅场效应晶体管具有由主单元绝缘栅极和由感测单元绝缘栅极控制的感测单元（4）控制的主单元（2）。 采样和保持电路（10,50）被布置成在包括至少一个采样状态和保持状态的多个状态下工作，以在至少一个采样状态下感测流过感测单元（4）的电流，但是 不在保持状态。 采样状态可以用在反馈回路中以控制驱动主单元和感测单元（2,4）的栅极的驱动放大器（20）和/或在测量输出上镜像感测单元（4）中的电流 端子（58）。

公开(公告)号：US06717787B2

公开(公告)日：2004-04-06

申请号：US10068920

申请日：2002-02-07

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: H02H308

CPC classification number: H03K17/0822 ,  H03K17/0828

Abstract: A power MOSFET has a main current carrying section and a sense current carrying section, with separate source electrodes. The source electrode of the main section is connected to the device source terminal. The source electrode of the sense section is connected through a current sensing resistance to the same terminal. Both sections have separate gate electrodes. By comparing a reference voltage with the sense voltage across the sensing resistance, a first control signal is provided for the gate electrode of the sense section. A control circuit includes an adjustment circuit coupled to the first control signal and to the sense voltage and provides a second control signal to the gate electrode of the main section. This second control signal maintains the gate-source voltage of the main section equal to the gate source voltage of the sense section.

Abstract translation: 功率MOSFET具有主电流承载部分和感测电流承载部分，具有单独的源电极。 主部分的源电极连接到器件源极端子。 感测部分的源极通过电流感测电阻连接到同一个端子。 两部分都具有分离的栅电极。 通过将参考电压与感测电阻两端的感测电压进行比较，为感测部分的栅电极提供第一控制信号。 控制电路包括耦合到第一控制信号和感测电压的调节电路，并向主部分的栅电极提供第二控制信号。 该第二控制信号保持主部分的栅极 - 源极电压等于感测部分的栅极源极电压。

公开(公告)号：US5259930A

公开(公告)日：1993-11-09

申请号：US788694

申请日：1991-11-06

Applicant: Richard J. Barker ,  Frank A. DiGiacomo ,  James M. Hardy ,  Robert F. Lamm ,  Allen S. Malsbury

Inventor： Richard J. Barker ,  Frank A. DiGiacomo ,  James M. Hardy ,  Robert F. Lamm ,  Allen S. Malsbury

IPC: B01J3/03 ,  C10B25/10 ,  F27D1/18 ,  C10B33/00

CPC classification number: C10B25/10 ,  B01J3/03 ,  F27D1/1808

Abstract: An automated top head cover and stem guide assembly adapted for covering a top opening in vertical vessels such as coking drums, and a method for remotely operating the assembly. The top head assembly includes a flanged connector unit attached pressure-tightly to a top flange opening of a coking drum and a top cover device including a cover unit pivotally attached to the flanged connector unit, so that the cover unit can be pivotally lifted and moved aside. A stem guide device is also pivotally attached to the top flange unit, so that a stem guide unit can be pivotally moved downwardly into place over the top flange unit opening, after a stem member is inserted into the vessel. Following coke removal from the drum, the stem member is withdrawn, the stem guide unit is pivotally moved upwardly, and the head cover unit is moved downwardly to cover the coking drum flanged unit. The invention also discloses method steps for operating the head cover and stem guide devices of the assembly.

Abstract translation: 适于覆盖垂直容器（例如焦化鼓）中的顶部开口的自动顶部顶盖和杆引导组件以及用于远程操作组件的方法。 顶部头部组件包括压力连接到焦化鼓的顶部凸缘开口的凸缘连接器单元和顶盖装置，顶盖装置包括可旋转地连接到带凸缘的连接器单元的盖单元，使得盖单元可以枢转地提升和移动 在旁边。 杆引导装置也可枢转地附接到顶部凸缘单元，使得在杆构件插入容器中之后，杆引导单元可以在顶部凸缘单元开口上向下枢转地向下移动到适当位置。 在从滚筒取出焦炭之后，杆构件被抽出，杆引导单元枢转地向上运动，并且头盖单元向下移动以覆盖焦化鼓凸缘单元。 本发明还公开了用于操作组件的头盖和杆引导装置的方法步骤。

公开(公告)号：US20090179687A1

公开(公告)日：2009-07-16

申请号：US12315649

申请日：2008-12-05

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: H03K17/687

CPC classification number: H03K17/0822 ,  Y10T307/74

Abstract: A power insulated gate field effect transistor has main cells (2) controlled by a main cell insulated gate and sense cells (4) controlled by a sense cell insulated gate. A sample and hold circuit (10, 50) is arranged to operate in a plurality of states including at least one sample state and a hold state to sense the current flowing through the sense cells (4) when in the at least one sample state but not in the hold state. The sample states may be used in a feedback loop to control a drive amplifier (20) driving the gates of the main and sense cells (2,4) and/or to mirror the current in the sense cells (4) on a measurement output terminal (58).

Abstract translation: 功率绝缘栅场效应晶体管具有由主单元绝缘栅极和由感测单元绝缘栅极控制的感测单元（4）控制的主单元（2）。 采样和保持电路（10,50）被布置成在包括至少一个采样状态和保持状态的多个状态下工作，以在至少一个采样状态下感测流过感测单元（4）的电流，但是 不在保持状态。 样本状态可以用在反馈回路中，以控制驱动主单元和感测单元（2,4）的栅极的驱动放大器（20）和/或将测量单元（4）中的电流镜像在测量输出 端子（58）。

公开(公告)号：US07477089B2

公开(公告)日：2009-01-13

申请号：US10552947

申请日：2004-04-08

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: H03K17/687

CPC classification number: H03K17/0822 ,  Y10T307/74

Abstract: A power insulated gate field effect transistor has main cells (2) controlled by a main cell insulated gate and sense cells (4) controlled by a sense cell insulated gate. A sample and hold circuit (10,50) is arranged to operate in a plurality of states including at least one sample state and a hold state to sense the current flowing through the sense cells (4) when in the at least one sample state but not in the hold state. The sample states may be used in a feedback loop to control a drive amplifier (20) driving the gates of the main and sense cells (2,4) and/or to mirror the current in the sense cells (4) on a measurement output terminal (58).

Abstract translation: 功率绝缘栅场效应晶体管具有由主单元绝缘栅极和由感测单元绝缘栅极控制的感测单元（4）控制的主单元（2）。 采样和保持电路（10,50）被布置成在包括至少一个采样状态和保持状态的多个状态下工作，以在至少一个采样状态下感测流过感测单元（4）的电流，但是 不在保持状态。 采样状态可以用在反馈回路中以控制驱动主单元和感测单元（2,4）的栅极的驱动放大器（20）和/或在测量输出上镜像感测单元（4）中的电流 端子（58）。

公开(公告)号：US6084462A

公开(公告)日：2000-07-04

申请号：US129809

申请日：1998-08-06

Applicant: Richard J. Barker

Inventor： Richard J. Barker

IPC: G01K3/00 ,  G01K7/01 ,  H01L27/02 ,  H01L27/04 ,  H01L29/78 ,  H01L35/00

CPC classification number: G01K3/005 ,  G01K7/01 ,  H01L27/0248

Abstract: A temperature sensing circuit suitable for integration with a power semiconductor device (MOSFET/IGBT) includes temperature-sensing p-n diode means (D1, D2, etc . . . ) integrated together with first and second IGFETs (M1 and M2). A current path through the temperature-sensing p-n diode means (D1, D2, etc . . . ) provides a voltage drop (Vf) having a negative temperature coefficient. The IGFETs (M1 and M2) are coupled in separate current paths from each other so as to have separate gate-to-source voltage signals (Vgs1 and Vgs2) between their source and gate electrodes (s and g). The gate-to-source voltage (Vgs1) of the first IGFET (M1) has a negative temperature coefficient of greater magnitude than the temperature coefficient (if any) of the gate-to-source voltage (Vgs2) of the second IGFET (M2). One of the source and gate electrodes (s or g) of the first IGFET (M1) is coupled to the p-n diode means (D1, D2, etc . . . ), and the first and second IGFETs (M1 and M2) are coupled together as or with a comparator (COMP) to compare the voltage drop (Vf) from the p-n diode means (D1, D2, etc . . . ) with any difference between the gate-to-source voltages (Vgs1 and Vgs2) of the IGFETs (M1 and M2) and so provide a logic output signal (Tabs) indicative of a sensed temperature in relation to a temperature threshold. The IGFETs (M1 and M2) are of the same insulated gate field effect type as each other, typically an N-channel enhancement type, so that the second IGFET (M2) has a gate threshold value (V.sub.T) which balances that of the first IGFET (M1) and provides the comparator (COMP) with a precision reference level corresponding to the temperature threshold and less susceptible to variation in process parameters associated with the IGFET threshold voltages.

Abstract translation: 适用于与功率半导体器件（MOSFET / IGBT）集成的温度检测电路包括与第一和第二IGFET（M1和M2）集成在一起的温度感测p-n二极管装置（D1，D2等）。 通过温度感测p-n二极管装置（D1，D2等）的电流通路提供具​​有负温度系数的电压降（Vf）。 IGFET（M1和M2）在彼此分开的电流路径中耦合，以便在它们的源极和栅电极（s和g）之间具有单独的栅极 - 源极电压信号（Vgs1和Vgs2）。 第一IGFET（M1）的栅极 - 源极电压（Vgs1）具有比第二IGFET（M2）的栅极 - 源极电压（Vgs2）的温度系数（如果有的话）的温度系数大的负的温度系数 ）。 第一IGFET（M1）的源极和栅电极（s或g）之一耦合到pn二极管装置（D1，D2等），并且第一和第二IGFET（M1和M2）耦合 一起作为或与比较器（COMP）一起比较来自pn二极管装置（D1，D2等）的电压降（Vf）与栅极 - 源极电压（Vgs1和Vgs2）之间的任何差异 IGFET（M1和M2）因此提供指示相对于温度阈值的感测温度的逻辑输出信号（Tabs）。 IGFET（M1和M2）具有彼此相同的绝缘栅场效应类型，通常是N沟道增强型，使得第二IGFET（M2）具有栅极阈值（VT），其平衡第一 IGFET（M1）并且向比较器（COMP）提供与温度阈值对应的精确参考电平，并且不太容易受到与IGFET阈值电压相关联的过程参数的变化的影响。

公开(公告)号：US5931916A

公开(公告)日：1999-08-03

申请号：US849347

申请日：1997-06-09

Applicant: Richard J. Barker ,  Andrew M. Lucking ,  James C. T. Chapman

Inventor： Richard J. Barker ,  Andrew M. Lucking ,  James C. T. Chapman

IPC: H04L29/08 ,  H04L12/28 ,  H04L29/06 ,  G06F13/00

CPC classification number: H04L12/5692 ,  H04L29/06 ,  H04L69/14

Abstract: In a multi-processor environment, a plurality of nodes interconnected by a number of networks each run a number of users processes and messages transferred by the processes are transmitted sequentially from a transmitting node to a receiving node using a different network for each datagram to be transferred.

Abstract translation: PCT No.PCT / GB95 / 02886 Sec。 371日期：1997年6月9日 102（e）日期1997年6月9日PCT提交1995年12月8日PCT公布。 WO96 / 18256 PCT公开号 日期1996年6月13日在多处理器环境中，通过多个网络互连的多个节点通过不同的网络从发送节点依次发送到接收节点，每个节点运行多个用户进程和由进程传送的消息 为每个数据报要传输。

公开(公告)号：US5092963A

公开(公告)日：1992-03-03

申请号：US312186

申请日：1989-02-21

Applicant: Richard J. Barker ,  Frank A. DiGiacomo ,  James M. Hardy ,  Robert F. Lamm ,  Allen S. Malsbury

Inventor： Richard J. Barker ,  Frank A. DiGiacomo ,  James M. Hardy ,  Robert F. Lamm ,  Allen S. Malsbury

IPC: B01J3/03 ,  C10B25/10 ,  F27D1/18

CPC classification number: B01J3/03 ,  C10B25/10 ,  F27D1/1808

Abstract: An automated top head cover and stem guide assembly adapted for covering a top opening in vertical vessels such as coking drums, and a method for remotely operating the assembly. The top head assembly includes a flanged connector unit attached pressure-tightly to a top flange opening of a coking drum, and a top cover device including a cover unit pivotally attached to the flanged connector unit, so that the top cover unit can be pivotally lifted and moved aside. A stem guide device is also pivotally attached to the flanged connector unit, so that a stem guide unit can be pivotally moved downwardly into place over the top flange unit opening, after a stem member is inserted into the vessel. Following coke removal from the drum, the stem member is withdrawn, the stem guide unit is pivotally moved upwardly, and the head cover unit is moved downwardly to cover the coking drum flanged connector unit. The invention also discloses method steps for operating the head cover and stem guide devices of the assembly.

Abstract translation: 适于覆盖垂直容器（例如焦化鼓）中的顶部开口的自动顶部顶盖和杆引导组件以及用于远程操作组件的方法。 顶部头部组件包括压力连接到焦化鼓的顶部凸缘开口的凸缘连接器单元和顶盖装置，其包括可旋转地附接到带凸缘的连接器单元的盖单元，使得顶盖单元可枢转地提升 并移到一边。 杆引导装置也可转动地连接到带法兰的连接器单元，使得杆杆引导单元可以在杆构件插入容器中之后在顶部凸缘单元开口上向下枢转地向下移动到位。 在从滚筒取出焦炭之后，杆构件被抽出，杆引导单元枢转地向上运动，并且头盖单元向下移动以覆盖焦化鼓带凸缘的连接器单元。 本发明还公开了用于操作组件的头盖和杆引导装置的方法步骤。