Vertical GaN-based metal insulator semiconductor FET
    1.
    发明授权
    Vertical GaN-based metal insulator semiconductor FET 失效
    垂直GaN基金属绝缘体半导体FET

    公开(公告)号:US08558242B2

    公开(公告)日:2013-10-15

    申请号:US13315705

    申请日:2011-12-09

    IPC分类号: H01L29/20

    摘要: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.

    摘要翻译: 半导体结构包括具有顶表面和相对底表面的III族氮化物衬底和与III族氮化物衬底的顶表面耦合的第一导电类型的第一III族氮化物层。 半导体结构还包括沿着垂直方向耦合到第一III族氮化物层的第二导电类型的第二III族氮化物层,以及沿着沿着垂直方向耦合到第二III族氮化物层的第三导电类型的第三III族氮化物层 垂直方向 半导体结构还包括延伸穿过第三III族氮化物层的一部分到第一III族氮化物层的第一沟槽,延伸穿过第三III族氮化物层的另一部分到第二III族氮化物层的第二沟槽,以及 耦合到第二和第三III族氮化物层的第一金属层。

    Vertical GaN-Based Metal Insulator Semiconductor FET
    2.
    发明申请
    Vertical GaN-Based Metal Insulator Semiconductor FET 失效
    垂直GaN基金属绝缘子半导体FET

    公开(公告)号:US20130146885A1

    公开(公告)日:2013-06-13

    申请号:US13315705

    申请日:2011-12-09

    IPC分类号: H01L29/20 H01L21/20

    摘要: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.

    摘要翻译: 半导体结构包括具有顶表面和相对底表面的III族氮化物衬底和与III族氮化物衬底的顶表面耦合的第一导电类型的第一III族氮化物层。 半导体结构还包括沿着垂直方向耦合到第一III族氮化物层的第二导电类型的第二III族氮化物层,以及沿着沿着垂直方向耦合到第二III族氮化物层的第三导电类型的第三III族氮化物层 垂直方向 半导体结构还包括延伸穿过第三III族氮化物层的一部分到第一III族氮化物层的第一沟槽,延伸穿过第三III族氮化物层的另一部分到第二III族氮化物层的第二沟槽,以及 耦合到第二和第三III族氮化物层的第一金属层。

    FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH
    4.
    发明申请
    FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH 失效
    使用选择性重制的浮动护环的制造

    公开(公告)号:US20130164893A1

    公开(公告)日:2013-06-27

    申请号:US13335355

    申请日:2011-12-22

    IPC分类号: H01L21/337 H01L21/20

    摘要: A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

    摘要翻译: 一种用于制造氮化镓(GaN)材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底,形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分,以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

    Fabrication of floating guard rings using selective regrowth
    9.
    发明授权
    Fabrication of floating guard rings using selective regrowth 失效
    使用选择性再生长制造浮动护环

    公开(公告)号:US08592298B2

    公开(公告)日:2013-11-26

    申请号:US13335355

    申请日:2011-12-22

    IPC分类号: H01L21/3205

    摘要: A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

    摘要翻译: 一种用于制造氮化镓(GaN)材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底,形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分,以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。