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    Solid-state imaging device production method and solid-state imaging device
    1.
    发明授权
    Solid-state imaging device production method and solid-state imaging device 失效
    固态成像装置的制作方法和固态成像装置

    公开(公告)号：US06991951B2

    公开(公告)日：2006-01-31

    申请号：US10853129

    申请日：2004-05-26

    申请人： Rieko Nishio ,  Toshihiro Kuriyama

    发明人： Rieko Nishio ,  Toshihiro Kuriyama

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14687 ,  H01L27/14632 ,  H01L27/14806

    摘要： A solid-state imaging device production method is provided. A light-receiving section 12 is formed on a semiconductor substrate 1. A first insulating film 6 is formed on a light-receiving section 12 and the semiconductor substrate 1. A metal film for wiring is formed on the first insulating film 6. A protection film 8 is formed on the metal film. A resist film is formed on a predetermined region of the protection film. A portion of the protection film 8 and a portion of the metal film is removed by using the resist film to form a wire 7 whose upper face is covered by the protection film 8. A hydrogen-containing second insulating film 10 is formed on the wire 7 and the first insulating film 6. A heating process is performed for the second insulating film 10. An anisotropic etching process is performed for the entire surface of the second insulating film 10 to remove the second insulating film 10.

    摘要翻译： 提供了一种固态成像装置制造方法。 在半导体衬底1上形成光接收部分12。 第一绝缘膜6形成在受光部12和半导体基板1上。 在第一绝缘膜6上形成用于布线的金属膜。 在金属膜上形成保护膜8。 在保护膜的预定区域上形成抗蚀剂膜。 通过使用抗蚀剂膜来除去保护膜8的一部分和金属膜的一部分，以形成其上表面被保护膜8覆盖的电线7。 在导线7和第一绝缘膜6上形成含氢的第二绝缘膜10。 对第二绝缘膜10进行加热处理。 对第二绝缘膜10的整个表面进行各向异性蚀刻处理以去除第二绝缘膜10。

    Method for manufacturing solid-state imaging device
    2.
    发明授权
    Method for manufacturing solid-state imaging device 失效

    公开(公告)号：US06498103B2

    公开(公告)日：2002-12-24

    申请号：US09903411

    申请日：2001-07-11

    申请人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

    发明人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

    IPC分类号： H01L21311

    CPC分类号： H01L27/14692

    摘要： A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

    Solid state imaging device and method for producing the same
    5.
    发明授权
    Solid state imaging device and method for producing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US07323758B2

    公开(公告)日：2008-01-29

    申请号：US11080418

    申请日：2005-03-16

    申请人： Naoto Niisoe ,  Hiroe Ogata ,  Rieko Nishio ,  Toshihiko Yano ,  Hitoshi Doi

    发明人： Naoto Niisoe ,  Hiroe Ogata ,  Rieko Nishio ,  Toshihiko Yano ,  Hitoshi Doi

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14843

    摘要： On a light shielding film 7, an anti-oxidation layer 9 covering at least the light shielding film 7 is formed. The anti-oxidation layer 9 is formed under a condition which does not oxidize a surface of the light shielding film 7. The anti-oxidation layer 9 is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film 7 can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film 7 is not oxidized, the thickness of the light shielding film 7 can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

    摘要翻译： 在遮光膜7上形成有至少覆盖遮光膜7的抗氧化层9。 在不氧化遮光膜7的表面的状态下形成抗氧化层9。 抗氧化层9由具有遮光性的高熔点金属化合物膜或具有透光性的绝缘膜形成。 因此，遮光膜7的表面的入射光的散射比在所有像素中均匀，能够实现抑制灵敏度不均匀的固态成像装置。 由于遮光膜7的表面不被氧化，所以可以减小遮光膜7的厚度。 因此，本发明可以满足像素尺寸减小的需求。

    Solid state imaging device and method for producing the same
    6.
    发明申请
    Solid state imaging device and method for producing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US20060081848A1

    公开(公告)日：2006-04-20

    申请号：US11080418

    申请日：2005-03-16

    申请人： Naoto Niisoe ,  Hiroe Ogata ,  Rieko Nishio ,  Toshihiko Yano ,  Hitoshi Doi

    发明人： Naoto Niisoe ,  Hiroe Ogata ,  Rieko Nishio ,  Toshihiko Yano ,  Hitoshi Doi

    IPC分类号： G03B17/26

    CPC分类号： H01L27/14623 ,  H01L27/14685 ,  H01L27/14843

    摘要： On a light shielding film 7, an anti-oxidation layer 9 covering at least the light shielding film 7 is formed. The anti-oxidation layer 9 is formed under a condition which does not oxidize a surface of the light shielding film 7. The anti-oxidation layer 9 is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film 7 can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film 7 is not oxidized, the thickness of the light shielding film 7 can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

    摘要翻译： 在遮光膜7上形成有至少覆盖遮光膜7的抗氧化层9。 抗氧化层9在不会使遮光膜7的表面氧化的状态下形成。抗氧化层9由具有遮光性的高熔点金属化合物膜或具有遮光性的绝缘膜形成， 透光性。 因此，遮光膜7的表面的入射光的散射率在所有像素中都可以是均匀的，结果，可以实现具有抑制的灵敏度不均匀性的固态成像装置。 由于遮光膜7的表面不被氧化，所以可以减小遮光膜7的厚度。 因此，本发明可以满足像素尺寸减小的需求。