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    Thermal isolation for hybrid thermal detectors
    1.
    发明授权
    Thermal isolation for hybrid thermal detectors 失效

    公开(公告)号：US5572029A

    公开(公告)日：1996-11-05

    申请号：US488390

    申请日：1995-06-07

    申请人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    发明人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    IPC分类号： G01J5/20 ,  H01L37/02 ,  G01J5/10

    CPC分类号： G01J5/20 ,  H01L37/02

    摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

    Thermal isolation for hybrid thermal detectors
    2.
    发明授权
    Thermal isolation for hybrid thermal detectors 失效
    混合热探测器的热隔离

    公开(公告)号：US5574282A

    公开(公告)日：1996-11-12

    申请号：US268365

    申请日：1994-06-30

    申请人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    发明人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    IPC分类号： G01J5/20 ,  H01L37/02 ,  G01J5/06

    CPC分类号： G01J5/20 ,  H01L37/02

    摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

    摘要翻译： 混合热检测器（10,110）包括焦平面阵列（20,120），热隔离结构（40,140）和集成电路衬底（60,160）。 焦平面阵列（20,120）包括热传感器（30,130）。 热隔离结构（40,140）包括提供聚焦平面阵列的热隔离，信号传输和结构支撑的未整形的台面型结构（44,146,148）和台面状导体（42,142,144） 20，120）安装在集成电路基板（60,160）上。 混合式热检测器（10）包括向所有热传感器（30）提供偏置电压的公共电极（28）。 混合热检测器（110）具有电隔离的热传感器（130），每个热传感器（130）由台面状导体（142,144）支撑，其向热传感器（130）提供偏置电压并从其接收信号电压 ）。 为了改进像素 - 衬底和像素间隔热隔离，台状导体（42,142,144）和公共电极（28）可以由绝热材料例如金属陶瓷或半导电材料形成。 可以各向异性地蚀刻未成像的台面型结构（44,146,148）以去除多余的台面材料并改善像素 - 衬底热隔离。

    Thermal isolation for hybrid thermal detectors
    3.
    发明授权
    Thermal isolation for hybrid thermal detectors 失效

    公开(公告)号：US5578826A

    公开(公告)日：1996-11-26

    申请号：US468159

    申请日：1995-06-06

    申请人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    发明人： William K. Walker ,  John P. Long ,  Robert A. Owen ,  Bert T. Runnels ,  Gail D. Shelton

    IPC分类号： G01J5/20 ,  H01L37/02 ,  G01J5/10

    CPC分类号： G01J5/20 ,  H01L37/02

    摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

    Thermal isolation structure for hybrid thermal detectors
    4.
    发明授权
    Thermal isolation structure for hybrid thermal detectors 失效
    用于混合热探测器的隔热结构

    公开(公告)号：US5426303A

    公开(公告)日：1995-06-20

    申请号：US235068

    申请日：1994-04-29

    申请人： Robert A. Owen ,  John P. Long ,  Bert T. Runnels ,  Gail D. Shelton ,  William K. Walker

    发明人： Robert A. Owen ,  John P. Long ,  Bert T. Runnels ,  Gail D. Shelton ,  William K. Walker

    IPC分类号： H01L37/02 ,  H04N5/33

    CPC分类号： H01L37/02

    摘要： A thermal detection system (10, 110, 210) includes a focal plane array (20, 120, 220), a thermal isolation structure (40, 140, 240), and an integrated circuit substrate (60, 160, 260). The focal plane array (20, 120, 220) includes a plurality of thermal sensors (30, 130, 230). The thermal isolation structure (40, 140, 240) includes mesa-type formations (44, 146, 148, 244) and bridge structures (42, 142, 144, 242) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120, 220) when mounted on the integrated circuit substrate (60, 160, 260). Thermal detection system (10) includes an infrared absorber and common electrode assembly (22) which provides a bias voltage to all thermal sensors (30). Thermal detection system (110) has a plurality of electrically isolated thermal sensors (130), each thermal sensor (130) is supported by bridge structures (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). Thermal detection system ( 220) has a plurality of electrically isolated thermal sensors (230), each thermal sensor (230) is electrically coupled to a pair of leads (246, 247), which are supported by a reinforcing layer (245). Bridge structures (42, 142, 144, 242) may be formed from a low thermal conductivity and adequate electrical conductivity material, such as silicon monoxide and chromium or other selected cermets.

    摘要翻译： 热检测系统（10,110,210）包括焦平面阵列（20,120,220），热隔离结构（40,140,​​240）和集成电路衬底（60,160,260）。 焦平面阵列（20,120,220）包括多个热传感器（30,130,230）。 热隔离结构（40,140,​​240）包括提供热隔离，信号传输和结构支撑的台面型结构（44,146,148,244）和桥结构（42,142,144,242） 焦平面阵列（20,120,220），当安装在集成电路基板（60,160,260）上时。 热检测系统（10）包括向所有热传感器（30）提供偏置电压的红外吸收器和公共电极组件（22）。 热检测系统（110）具有多个电隔离的热传感器（130），每个热传感器（130）由桥结构（142,144）支撑，其提供偏置电压并从热传感器接收信号电压 （130）。 热检测系统（220）具有多个电隔离的热传感器（230），每个热传感器（230）电耦合到由加强层（245）支撑的一对引线（246,247）。 桥结构（42,142,144,242）可以由低热导率和足够的导电性材料（例如一氧化硅和铬或其它选择的金属陶瓷）形成。

    Thermal isolation of hybrid thermal detectors through an anisotropic etch
    6.
    发明授权
    Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
    通过各向异性蚀刻对混合热探测器进行热隔离

    公开(公告)号：US5478242A

    公开(公告)日：1995-12-26

    申请号：US236778

    申请日：1994-04-29

    申请人： William K. Walker ,  Steven N. Frank ,  Charles M. Hanson ,  Robert J. S. Kyle ,  Edward G. Meissner ,  Robert A. Owen ,  Gail D. Shelton

    发明人： William K. Walker ,  Steven N. Frank ,  Charles M. Hanson ,  Robert J. S. Kyle ,  Edward G. Meissner ,  Robert A. Owen ,  Gail D. Shelton

    IPC分类号： H01L27/146 ,  H01L37/02 ,  H01L31/18

    CPC分类号： H01L37/02 ,  H01L27/1465

    摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

    摘要翻译： 热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。 热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26） 电路基板（12）。 在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 （24），用于改善热隔离。 凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。 导体（108）沿着通孔（110）的壁和覆盖接触垫（104）沉积在台面型结构（102）的顶部上。 使用导体（108）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料（118）以改善热隔离。

    Thermal isolation of hybrid thermal detectors through an anisotropic etch
    8.
    发明授权
    Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
    通过各向异性蚀刻对混合热探测器进行热隔离

    公开(公告)号：US5572059A

    公开(公告)日：1996-11-05

    申请号：US477718

    申请日：1995-06-07

    申请人： William K. Walker ,  Steven N. Frank ,  Charles M. Hanson ,  Robert J. S. Kyle ,  Edward G. Meissner ,  Robert A. Owen ,  Gail D. Shelton

    发明人： William K. Walker ,  Steven N. Frank ,  Charles M. Hanson ,  Robert J. S. Kyle ,  Edward G. Meissner ,  Robert A. Owen ,  Gail D. Shelton

    IPC分类号： H01L27/146 ,  H01L37/02 ,  H01L27/095

    CPC分类号： H01L37/02 ,  H01L27/1465

    摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

    摘要翻译： 热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。 热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26） 电路基板（12）。 在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 （24），用于改善热隔离。 凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。 导体（108）沿着通孔（110）的壁和覆盖接触焊盘（104）沉积在台面型结构（102）的顶部上。 使用导体（108）作为蚀刻掩模的无捻蚀刻去除多余的台面材料（118）以改善热隔离。

    Hybrid integrated circuit
    10.
    发明授权
    Hybrid integrated circuit 失效
    混合集成电路

    公开(公告)号：US5548118A

    公开(公告)日：1996-08-20

    申请号：US477750

    申请日：1995-06-07

    申请人： William K. Walker

    发明人： William K. Walker

    IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L25/16 ,  G01J5/34

    CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L25/16 ,  H01L2224/13099 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041

    摘要： This is a new hybrid integrated circuit. The device may be an uncooled infrared detector, with the detector comprising: uncooled infrared elements on a first substrate; internal IC structures on a second substrate to be connected to the uncooled infrared elements: IC interlevel insulation on top of the internal IC structures: IC top level metal connections on top of the IC interlevel insulation: a protective overcoat over the IC top level metal and the IC interlevel insulation; a dry etch protective layer over the protective overcoat; thermal isolation mesas on the protective layer; and local interconnects over the thermal isolation mesas and the substrate, wherein the uncooled infrared detectors are connected to the internal IC structures through the local interconnects. In addition, the protective layer may include a photosensitive polyimide, a plasma deposited silicon dioxide (SiO.sub.2), a colloidal SiO.sub.2, a PMMA or a PIRL.

    摘要翻译： 这是一个新的混合集成电路。 该装置可以是非制冷的红外检测器，其中检测器包括：在第一基板上的未冷却的红外元件; 内部IC结构要连接到未冷却的红外元件的第二个基板上：内部IC结构顶部的IC层间绝缘：集成电路层间绝缘顶部的IC顶层金属连接：IC顶层金属上的保护外层， IC层间绝缘; 保护性外涂层上的干蚀刻保护层; 保护层上的隔热台面; 以及在隔热台面和基板上的局部互连，其中非制冷红外检测器通过局部互连连接到内部IC结构。 此外，保护层可以包括光敏聚酰亚胺，等离子体沉积二氧化硅（SiO 2），胶体SiO 2，PMMA或PIRL。