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    Solar Energy Conversion Apparatus, and Methods of Making and Using the Same
    1.
    发明申请
    Solar Energy Conversion Apparatus, and Methods of Making and Using the Same 审中-公开
    太阳能转换装置及其使用方法

    公开(公告)号：US20160043260A1

    公开(公告)日：2016-02-11

    申请号：US14823132

    申请日：2015-08-11

    Applicant: Robert J. Nemanich ,  Franz A.M. Koeck ,  Tianyin Sun

    Inventor： Robert J. Nemanich ,  Franz A.M. Koeck ,  Tianyin Sun

    IPC: H01L31/074 ,  H01L31/18 ,  H01L31/065

    CPC classification number: H01J40/06

    Abstract: Apparatuses and methods are provided for converting solar energy. The apparatus can include an emitter electrode, a collector electrode, a vacuum gap, and an electronic circuit. The emitter electrode can include a first light absorbing layer in direct contact with a first low work function layer. The vacuum gap can be disposed between the emitter and the collector. The vacuum gap can be in direct contact with the first low function layer. The electronic circuit can be coupled to the emitter electrode and the collector electrode. The first low work function layer can be disposed at least partially between the first light absorbing layer and the vacuum gap.

    Abstract translation: 提供了用于转换太阳能的装置和方法。 该装置可以包括发射极，集电极，真空间隙和电子电路。 发射电极可以包括与第一低功函数层直接接触的第一光吸收层。 真空间隙可以设置在发射极和集电极之间。 真空间隙可以与第一低功能层直接接触。 电子电路可以耦合到发射极和集电极。 第一低功函数层可以至少部分地设置在第一光吸收层和真空间隙之间。

    High temperature rectifying contact
    2.
    发明授权
    High temperature rectifying contact 失效
    高温修复接触

    公开(公告)号：US5212401A

    公开(公告)日：1993-05-18

    申请号：US735602

    申请日：1991-07-25

    Applicant: Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das

    Inventor： Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das

    IPC: H01L29/16 ,  H01L29/47

    CPC classification number: H01L29/1602 ,  H01L29/47

    Abstract: A rectifying contact for use at high temperatures including a monocrystalline semiconducting diamond layer on a substrate and a heteroepitaxial metal layer thereon. The metal layer has a lattice match with the diamond and is deposited on the diamond substantially in atomic registry therewith. The metal and diamond form a rectifying contact which has good mechanical adhesion and provides stable rectifying operation at elevated temperatures. The metal layer may be formed by deposition in an ultra-high vacuum. In alternate embodiments, the metal layer may be formed on a monocrystalline semiconducting diamond substrate or on at least one monocrystalline diamond area of a textured polycrystalline layer.

    Abstract translation: 在高温下使用的整流接触件，包括衬底上的单晶半导体金刚石层和其上的异质外延金属层。 金属层与金刚石具有晶格匹配，并且基本上以原子对准的方式沉积在金刚石上。 金属和金刚石形成整流接触，其具有良好的机械粘附性并且在升高的温度下提供稳定的整流操作。 金属层可以通过在超高真空中沉积而形成。 在替代实施例中，金属层可以形成在单晶半导体金刚石衬底上或纹理化多晶层的至少一个单晶金刚石区域上。

    High temperature refractory silicide rectifying contact
    5.
    发明授权
    High temperature refractory silicide rectifying contact 失效
    高温耐火硅化物整流接触

    公开(公告)号：US5155559A

    公开(公告)日：1992-10-13

    申请号：US735534

    申请日：1991-07-25

    Applicant: Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das ,  Dale G. Thompson, Jr. ,  Scott R. Sahaida

    Inventor： Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das ,  Dale G. Thompson, Jr. ,  Scott R. Sahaida

    IPC: H01L21/285 ,  H01L29/16 ,  H01L29/47

    CPC classification number: H01L29/1602 ,  H01L21/28537 ,  H01L29/16 ,  H01L29/47

    Abstract: A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between the diamond layer and the refractory metal silicide layer. The annealed interface region is preferably a non-abrupt interface comprising material selected from the group consisting of silicon carbide, the carbide of the refractory metal and mixtures thereof. The present invention also provides a method for making a rectifying contact on a semiconducting diamond layer comprising the steps of forming a refractory metal silicide on the diamond layer, and annealing the refractory metal silicide and diamond layer. Preferably, the step of annealing comprises the step of heating the diamond layer and refractory metal silicide at temperature of at least about 450.degree. C.

    Abstract translation: 包括半导体金刚石层（例如单晶或多晶），与金刚石层相邻的难熔金属硅化物层以形成与其整流接触的半导体器件以及金刚石层与难熔金属硅化物层之间的退火界面区域。 退火的界面区优选是非突变界面，其包括选自碳化硅，难熔金属的碳化物及其混合物的材料。 本发明还提供了一种在半导体金刚石层上制造整流接触的方法，包括在金刚石层上形成难熔金属硅化物，以及对难熔金属硅化物和金刚石层进行退火的步骤。 优选地，退火步骤包括在至少约450℃的温度下加热金刚石层和难熔金属硅化物的步骤。

    Ohmic contacts for hydrogenated amorphous silicon
    6.
    发明授权
    Ohmic contacts for hydrogenated amorphous silicon 失效
    氢化非晶硅的欧姆接触

    公开(公告)号：US4529619A

    公开(公告)日：1985-07-16

    申请号：US631414

    申请日：1984-07-16

    Applicant: Robert J. Nemanich ,  Malcolm J. Thompson

    Inventor： Robert J. Nemanich ,  Malcolm J. Thompson

    IPC: H01L31/04 ,  H01L21/28 ,  H01L21/285 ,  H01L29/40 ,  H01L29/45 ,  H01L31/10 ,  H01L21/324

    CPC classification number: H01L21/28518 ,  H01L29/456

    Abstract: A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.

    Abstract translation: 一种在非晶硅氢化物半导体和衬底之间形成欧姆接触的方法，其包括在衬底上涂覆钯膜并用形成薄钯硅化物层的非晶硅氢化物薄膜涂覆钯。 非晶硅氢化物通过退火脱氢，形成高度缺陷的非晶硅层和较厚的钯硅化物层，载流子可以容易地穿过其中。 然后将非晶硅氢化物半导体涂覆在非晶硅层上至所需的厚度。

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