摘要:
A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.
摘要:
A substrate is moved in a linear direction simultaneously between a processing face of an upper proximity head and a processing face of a lower proximity head. As the substrate is moved, a first meniscus of processing liquid is generated between the processing face of the upper proximity head and a top surface of the substrate, and a second meniscus of processing liquid is generated between the processing face of the lower proximity head and a bottom surface of the substrate. The first meniscus has a meniscus protrusion extending in the linear direction in which the substrate is moved and positioned on a trailing side of the first meniscus relative to the linear direction in which the substrate is moved. The meniscus protrusion is centered on the substrate relative to a diameter of the substrate as measured perpendicular to the linear direction in which the substrate is moved.
摘要:
A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.
摘要:
A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.
摘要:
A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.
摘要:
A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.
摘要:
A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.
摘要:
A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.
摘要:
Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.
摘要:
A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process window. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.