REDUCTION OF ENTRANCE AND EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS
    1.
    发明申请
    REDUCTION OF ENTRANCE AND EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS 有权
    减少入口和退出标记由基板处理的菜单

    公开(公告)号:US20130061879A1

    公开(公告)日:2013-03-14

    申请号:US13671459

    申请日:2012-11-07

    IPC分类号: B08B1/02 B08B3/04

    摘要: A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.

    摘要翻译: 将衬底放置在载体的开口内的多个支撑销上,使得在衬底的径向周边和载体之间存在间隙。 衬底和载体在线性方向上通过在上和下邻近头的相应面之间产生的弯液面。 上和下邻近头中的每一个包括多个弯液面喷嘴,其构造成向液面供应液体。 多个真空端口形成在每个上下接近头的相应面上,并且被布置成完全包围多个弯液面喷嘴。 弯液面的液体从衬底的径向周边和载体之间的间隙排出,以便减小衬底上的入口或出口标记中的至少一个的尺寸和频率。

    Reduction of entrance and exit marks left by a substrate-processing meniscus
    2.
    发明授权
    Reduction of entrance and exit marks left by a substrate-processing meniscus 有权
    减少由基板处理半月板留下的入口和出口痕迹

    公开(公告)号:US08623152B2

    公开(公告)日:2014-01-07

    申请号:US13671459

    申请日:2012-11-07

    IPC分类号: B08B1/02

    摘要: A substrate is moved in a linear direction simultaneously between a processing face of an upper proximity head and a processing face of a lower proximity head. As the substrate is moved, a first meniscus of processing liquid is generated between the processing face of the upper proximity head and a top surface of the substrate, and a second meniscus of processing liquid is generated between the processing face of the lower proximity head and a bottom surface of the substrate. The first meniscus has a meniscus protrusion extending in the linear direction in which the substrate is moved and positioned on a trailing side of the first meniscus relative to the linear direction in which the substrate is moved. The meniscus protrusion is centered on the substrate relative to a diameter of the substrate as measured perpendicular to the linear direction in which the substrate is moved.

    摘要翻译: 基板在上接近头的处理面和下邻近头的处理面之间同时沿线性方向移动。 当衬底移动时,在上接近头的处理面和衬底的上表面之间产生处理液体的第一弯月面,并且在下邻近头的处理面和 衬底的底表面。 第一弯液面具有弯曲面突起,其沿着线性方向延伸,在该方向上衬底相对于衬底移动的线性方向移动并定位在第一弯液面的后侧。 弯月面突起相对于垂直于衬底移动的线性方向测量的基底的直径在基底上居中。

    Reduction of entrance and exit marks left by a substrate-processing meniscus
    3.
    发明授权
    Reduction of entrance and exit marks left by a substrate-processing meniscus 有权
    减少由基板处理半月板留下的入口和出口痕迹

    公开(公告)号:US08317932B2

    公开(公告)日:2012-11-27

    申请号:US12725422

    申请日:2010-03-16

    IPC分类号: B08B5/04

    摘要: A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.

    摘要翻译: 将衬底放置在载体的开口内的多个支撑销上,使得在衬底的径向周边和载体之间存在间隙。 衬底和载体在线性方向上通过在上和下邻近头的相应面之间产生的弯液面。 上和下邻近头中的每一个包括多个弯液面喷嘴,其构造成向液面供应液体。 多个真空端口形成在每个上下接近头的相应面上,并且被布置成完全包围多个弯液面喷嘴。 弯液面的液体从衬底的径向周边和载体之间的间隙排出,以便减小衬底上的入口或出口标记中的至少一个的尺寸和频率。

    Reduction of Entrance and Exit Marks Left by a Substrate-Processing Meniscus
    4.
    发明申请
    Reduction of Entrance and Exit Marks Left by a Substrate-Processing Meniscus 有权
    减少由基板加工半月板留下的入口和出口标记

    公开(公告)号:US20100170539A1

    公开(公告)日:2010-07-08

    申请号:US12725422

    申请日:2010-03-16

    IPC分类号: B08B1/02

    摘要: A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.

    摘要翻译: 描述用于产生和维持用于处理衬底的弯液面的邻近头。 邻近头部包括形成在邻近头部的表面上的多个弯液面喷嘴,喷嘴被配置为向弯月面供应液体,形成在邻近头部的表面上的多个真空端口,真空端口被完全布置 围绕多个弯液面喷嘴,以及形成在邻近头部的表面上的多个气体喷嘴,气体喷嘴至少部分地围绕真空端口。 邻近头还包括用于通过帮助和鼓励来自弯液面的液体排出衬底和载体之间的间隙来减小衬底上的前缘和后缘处的入口和/或出口标记的尺寸和频率的装置。

    Reduction of entrance and exit marks left by a substrate-processing meniscus
    5.
    发明授权
    Reduction of entrance and exit marks left by a substrate-processing meniscus 有权
    减少由基板处理半月板留下的入口和出口痕迹

    公开(公告)号:US07703462B2

    公开(公告)日:2010-04-27

    申请号:US11612868

    申请日:2006-12-19

    IPC分类号: B08B3/00

    摘要: A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.

    摘要翻译: 描述用于产生和维持用于处理衬底的弯液面的邻近头。 邻近头部包括形成在邻近头部的表面上的多个弯液面喷嘴,喷嘴被配置为向弯月面供应液体,形成在邻近头部的表面上的多个真空端口,真空端口被完全布置 围绕多个弯液面喷嘴,以及形成在邻近头部的表面上的多个气体喷嘴,气体喷嘴至少部分地围绕真空端口。 邻近头还包括用于通过帮助和鼓励来自弯液面的液体排出衬底和载体之间的间隙来减小衬底上的前缘和后缘处的入口和/或出口标记的尺寸和频率的装置。

    REDUCTION OF ENTRANCE AND EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS
    6.
    发明申请
    REDUCTION OF ENTRANCE AND EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS 有权
    减少入口和退出标记由基板处理的菜单

    公开(公告)号:US20080078421A1

    公开(公告)日:2008-04-03

    申请号:US11612868

    申请日:2006-12-19

    摘要: A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.

    摘要翻译: 描述用于产生和维持用于处理衬底的弯液面的邻近头。 邻近头部包括形成在邻近头部的表面上的多个弯液面喷嘴,喷嘴被配置为向弯月面供应液体,形成在邻近头部的表面上的多个真空端口,真空端口被完全布置 围绕多个弯液面喷嘴,以及形成在邻近头部的表面上的多个气体喷嘴,气体喷嘴至少部分地围绕真空端口。 邻近头还包括用于通过帮助和鼓励来自弯液面的液体排出衬底和载体之间的间隙来减小衬底上的前缘和后缘处的入口和/或出口标记的尺寸和频率的装置。

    Multi-menisci processing apparatus
    7.
    发明授权
    Multi-menisci processing apparatus 失效
    多功能加工设备

    公开(公告)号:US07464719B2

    公开(公告)日:2008-12-16

    申请号:US11437891

    申请日:2006-05-18

    IPC分类号: B08B3/00 B08B7/04

    摘要: A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

    摘要翻译: 提供了基板制备装置。 该装置包括构造成安装在基板制造设备中的壳体。 壳体包括用于制备晶片表面的歧管。 歧管被配置为在歧管的第一部分中包括第一过程窗口。 第一流体弯液面能够在第一过程窗口内被定义。 还包括在歧管的第二部分中的第二处理窗口。 能够在第二过程窗口内限定第二流体弯月面。 臂与壳体一体化,并且臂联接到歧管,使得臂在操作期间能够将歧管定位在基板附近。 因此,该装置提供了使用单个歧管在基板的表面上形成多重半月板。

    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    9.
    发明申请
    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
    使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离

    公开(公告)号:US20070218653A1

    公开(公告)日:2007-09-20

    申请号:US11750960

    申请日:2007-05-18

    IPC分类号: H01L21/02

    摘要: Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

    摘要翻译: 提供了通过头部处理基板的方法,该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时,将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时,移除被处理,并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间,并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时,将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

    Multi-menisci processing apparatus
    10.
    发明申请
    Multi-menisci processing apparatus 失效
    多功能加工设备

    公开(公告)号:US20060207636A1

    公开(公告)日:2006-09-21

    申请号:US11437891

    申请日:2006-05-18

    IPC分类号: B08B3/00 B08B3/12

    摘要: A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process window. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

    摘要翻译: 提供了基板制备装置。 该装置包括构造成安装在基板制造设备中的壳体。 壳体包括用于制备晶片表面的歧管。 歧管被配置为在歧管的第一部分中包括第一过程窗口。 第一流体弯液面能够在第一过程窗口内被定义。 还包括在歧管的第二部分中的第二处理窗口。 能够在第二过程窗口内限定第二流体弯月面。 臂与壳体一体化,并且臂联接到歧管,使得臂在操作期间能够将歧管定位在基板附近。 因此,该装置提供了使用单个歧管在基板的表面上形成多重半月板。