METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    1.
    发明申请
    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
    使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离

    公开(公告)号:US20070218653A1

    公开(公告)日:2007-09-20

    申请号:US11750960

    申请日:2007-05-18

    IPC分类号: H01L21/02

    摘要: Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

    摘要翻译: 提供了通过头部处理基板的方法,该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时,将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时,移除被处理,并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间,并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时,将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

    Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
    4.
    发明授权
    Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 失效
    使用保持在晶片表面附近的多个入口和出口干燥半导体晶片表面的方法

    公开(公告)号:US07387689B2

    公开(公告)日:2008-06-17

    申请号:US11750960

    申请日:2007-05-18

    IPC分类号: B08B3/00 F26B5/04

    摘要: Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

    摘要翻译: 提供了通过头部处理基板的方法,该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时,将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时,移除被处理,并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间,并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时,将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

    Apparatuses and methods for cleaning a substrate
    6.
    发明申请
    Apparatuses and methods for cleaning a substrate 失效
    用于清洁基底的装置和方法

    公开(公告)号:US20050133061A1

    公开(公告)日:2005-06-23

    申请号:US10816337

    申请日:2004-03-31

    IPC分类号: B08B3/00 H01L21/00 B08B1/02

    摘要: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

    摘要翻译: 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上方,并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸,并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。

    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
    7.
    发明授权
    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
    使用压缩和/或加压泡沫,气泡和/或液体清洁半导体晶片的方法和设备

    公开(公告)号:US08535451B2

    公开(公告)日:2013-09-17

    申请号:US12240300

    申请日:2008-09-29

    IPC分类号: B08B1/04

    摘要: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    摘要翻译: 公开了一种装置和方法,其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件(或泡沫层)上,并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 形式与半导体晶圆之间的相对移动。 例如平行于和/或垂直于半导体晶片的顶表面的振荡。 然后在卡住的泡沫与半导体晶片接触的同时引发,以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。

    Apparatus for Contained Chemical Surface Treatment
    8.
    发明申请
    Apparatus for Contained Chemical Surface Treatment 审中-公开
    含化学表面处理装置

    公开(公告)号:US20110061687A1

    公开(公告)日:2011-03-17

    申请号:US12949762

    申请日:2010-11-18

    IPC分类号: B08B3/00

    摘要: Apparatuses for preparing a surface of a substrate using a proximity head includes a carrier to hold and move the substrate along an axis and a proximity head having a head surface with a plurality of outlet ports defined thereon. The proximity head is defined to be positioned proximate and over the carrier and the surface of the substrate. A length of the head surface of the proximity head is defined to be greater than a diameter of the substrate and at least partially overlapping over the carrier when the substrate is present. The proximity head includes a first set of outlet ports in a first region defining a first applicator that is configured to apply a non-Newtonian fluid between a surface of the carrier and the head surface of the proximity head. A second set of outlet ports in a second region of the proximity head defines a second applicator that is configured to apply a first chemistry to the surface of the substrate when present. The second region is adjacent to the first region. A third set of outlet ports in a third region of the proximity head defines a third applicator that is configured to apply the non-Newtonian fluid between the head surface of the proximity head and the surface of the substrate when present. The third region is defined adjacent to the second region. A fourth set of outlet ports is defined in the second region of the proximity head to substantially remove the first chemistry from the surface of the substrate when present.

    摘要翻译: 用于使用接近头来制备基底表面的装置包括:载体,用于沿着轴保持和移动基底;以及接近头,具有头表面,其上限定有多个出口。 接近头被限定为位于载体和基底的表面附近和上方。 接近头部的头表面的长度被限定为大于衬底的直径,并且当衬底存在时至少部分地重叠在载体上。 邻近头部包括在第一区域中的第一组出口端口,所述第一区域限定第一施用器,其被构造成在载体的表面和邻近头部的头部表面之间施加非牛顿流体。 在邻近头部的第二区域中的第二组出口端口限定第二施加器,其被配置为当存在时将第一化学物质施加到衬底的表面。 第二区域与第一区域相邻。 接近头部的第三区域中的第三组出口限定了第三施加器,其被配置为当存在时将非牛顿流体施加在邻近头部的头部表面和基底表面之间。 第三区域被定义为与第二区域相邻。 第四组出口端口限定在邻近头部的第二区域中,以在存在时从衬底的表面基本上移除第一化学物质。

    Two-Phase Substrate Cleaning Material
    9.
    发明申请
    Two-Phase Substrate Cleaning Material 失效
    两相基材清洗材料

    公开(公告)号:US20100317556A1

    公开(公告)日:2010-12-16

    申请号:US12862072

    申请日:2010-08-24

    IPC分类号: C11D3/43

    摘要: A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.

    摘要翻译: 公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。 清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。 液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。 在一个实施方案中,液体中羧酸固体组分的浓度在约3重量%至约5重量%的范围内。 在一个实施方案中,羧酸固体组分由至少四个的碳数定义。 羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。 清洁化合物是粘稠的并且可以形成为凝胶。