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公开(公告)号：US07456945B2
公开(公告)日：2008-11-25
申请号：US10693795
申请日：2003-10-24
申请人： Robert Shih , Chun Lei , John Chen
发明人： Robert Shih , Chun Lei , John Chen
IPC分类号： G01B11/26
CPC分类号： H01L31/0203 , G02B6/4206 , H01S5/02212 , H01S5/02288
摘要： A photonic device package with a passively aligned lens cap is disclosed. The lens cap is positioned with an unobstructed view of the lens portion of the lens cap. A header holding a photonic device, is moved relative to the cap or vice versa until the video display system indicates that the photonic device is aligned to the lens. The cap is held in alignment by forming at least one weld point between the cap and the header. A subsequent hermetic sealing process can be used to permanently seal the cap to the header.
摘要翻译： 公开了一种具有被动对准的透镜盖的光子器件封装。 透镜盖定位成透镜盖的透镜部分的无阻挡视图。 保持光子器件的头部相对于盖子移动，反之亦然，直到视频显示系统指示光子器件与透镜对准。 通过在盖和集管之间形成至少一个焊接点来将盖保持对准。 随后的气密密封过程可用于将盖永久地密封到集管。
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2.发明申请公开(公告)号：US20050101039A1
公开(公告)日：2005-05-12
申请号：US10695641
申请日：2003-10-27
申请人： John Chen , Chun Lei , Robert Shih
发明人： John Chen , Chun Lei , Robert Shih
IPC分类号： H01L21/00
CPC分类号： H01S5/4025 , H01S5/028 , H01S5/405
摘要： An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.
摘要翻译： 公开了一种用于堆叠光子器件的装置。 设备可以包括设置在基座上的底座，第一和第二间隔开的轨道部分，以及设置在轨道部分之间的底座上的真空引导件，用于形成将多个光子器件和间隔杆拉到一起的真空梯度， 。 可选地，间隔开的光子器件支撑件可以放置在轨道部分之间的基部上，以将光子器件提升离开基座的表面。 该设备还可以包括夹持系统以将堆叠保持就位，使得可以使用气相沉积工艺将涂层施加到光子器件。 在一个示例性实施例中，光子器件可以是激光条。
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公开(公告)号：US20060187454A1
公开(公告)日：2006-08-24
申请号：US10693795
申请日：2003-10-24
申请人： Robert Shih , Chun Lei , John Chen
发明人： Robert Shih , Chun Lei , John Chen
IPC分类号： G01B11/00
CPC分类号： H01L31/0203 , G02B6/4206 , H01S5/02212 , H01S5/02288
摘要： A photonic device package with a passively aligned lens cap is disclosed. The lens cap is positioned with an unobstructed view of the lens portion of the lens cap. A header holding a photonic device, is moved relative to the cap or vice versa until the video display system indicates that the photonic device is aligned to the lens. The cap is held in alignment by forming at least one weld point between the cap and the header. A subsequent hermetic sealing process can be used to permanently seal the cap to the header.
摘要翻译： 公开了一种具有被动对准的透镜盖的光子器件封装。 透镜盖定位成透镜盖的透镜部分的无阻挡视图。 保持光子器件的头部相对于盖子移动，反之亦然，直到视频显示系统指示光子器件与透镜对准。 通过在盖和集管之间形成至少一个焊接点来将盖保持对准。 随后的气密密封过程可用于将盖永久地密封到集管。
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公开(公告)号：US07272161B1
公开(公告)日：2007-09-18
申请号：US10670876
申请日：2003-09-25
申请人： John Chen , Robert Shih , Chun Lei
发明人： John Chen , Robert Shih , Chun Lei
IPC分类号： H01S3/08
CPC分类号： H01S5/22
摘要： A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.
摘要翻译： 由半导体晶片形成的半导体激光器具有有源层，最后两个光学包覆层和脊状波导。 脊状波导的脊顶表面从半导体激光晶片的第一表面沉积第一高度。 多个半导体台面形成在半导体激光晶片上，并且具有从第一表面设置大于第一高度的第二高度的台面顶面，使得多个半导体台面屏蔽脊波导免受机械损坏。
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5.发明授权公开(公告)号：US07268005B2
公开(公告)日：2007-09-11
申请号：US10695641
申请日：2003-10-27
申请人： John Chen , Chun Lei , Robert Shih
发明人： John Chen , Chun Lei , Robert Shih
CPC分类号： H01S5/4025 , H01S5/028 , H01S5/405
摘要： An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.
摘要翻译： 公开了一种用于堆叠光子器件的装置。 设备可以包括设置在基座上的底座，第一和第二间隔开的轨道部分，以及设置在轨道部分之间的底座上的真空引导件，用于形成将多个光子器件和间隔杆拉到一起的真空梯度， 。 可选地，间隔开的光子器件支撑件可以放置在轨道部分之间的基部上，以将光子器件提升离开基座的表面。 该设备还可以包括夹持系统以将堆叠保持就位，使得可以使用气相沉积工艺将涂层施加到光子器件。 在一个示例性实施例中，光子器件可以是激光条。
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公开(公告)号：US06643304B1
公开(公告)日：2003-11-04
申请号：US09626444
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01S500
CPC分类号： H01L33/46
摘要： A Gallium Nitride based Light Emitting Diode (LED) includes both a transparent substrate and a window for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window or at the face of the transparent substrate. An external optical reflector is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window is being utilized, a Distributed Bragg Reflector (DBR) is formed directly on the “backside” of the substrate. However, if light through the substrate is being utilized, a Distributed Bragg Reflector is formed directly on the light emitting portion of the window.
摘要翻译： 基于氮化镓的发光二极管（LED）包括透明基板和用于退出由LED产生的光的窗口。 可以在窗口的正面或透明基板的表面使用有用量的光。 直接在LED的外表面上形成外部光学反射器，该外部面并不用于退出有用的光。 如果使用来自窗口的光，则直接在基板的“背面”上形成分布式布拉格反射器（DBR）。 然而，如果利用通过基板的光，则分布式布拉格反射器直接形成在窗口的发光部分上。
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公开(公告)号：US06642549B2
公开(公告)日：2003-11-04
申请号：US10197614
申请日：2002-07-15
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L3300
摘要： A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
摘要翻译： 用于氮化镓（GaN）的发光二极管（LED）的窗结构包括GaN化合物的Mg +掺杂p窗口层; 薄的半透明金属接触层; 以及形成在所述接触层上的非晶电流扩散层。 接触层由NiOx / Au形成，电流扩散层由氧化铟锡形成。 二极管的p电极包括与电流扩展层形成欧姆连接的钛粘合层和与Mg +掺杂窗口层的肖特基二极管连接。
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公开(公告)号：US06459098B1
公开(公告)日：2002-10-01
申请号：US09626441
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L2715
摘要： A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.
摘要翻译： 由AlGaInP化合物构成的发光二极管（LED）包括提高二极管效率的多层窗口。 窗口按顺序形成包括由p掺杂的GaP形成的轻掺杂的第一层; 由p GaAs形成的低阻抗第二层; 由氧化铟锡（ITO）形成的非晶导电层和钛\金接触。 在一个实施例中，触点与第二和第三层形成欧姆连接; 和第一层的肖特基二极管连接。 在第二实施例中，触点与第三层形成欧姆连接; 并且与第一层直接接触绝缘。
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公开(公告)号：US06580096B2
公开(公告)日：2003-06-17
申请号：US10167698
申请日：2002-06-13
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L2715
摘要： A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.
摘要翻译： 由AlGaInP化合物构成的发光二极管（LED）包括多层窗口，其按顺序形成由p掺杂的GaP形成的轻掺杂的第一层; 由p GaAs形成的低阻抗第二层; 由铟锡氧化物（ITO）形成的非晶导电层和钛/金接触。 在一个实施例中，触点与第二和第三层形成欧姆连接; 和与第一层的肖特基二极管连接。 在第二实施例中，触点与第三层形成欧姆连接; 并且与第一层直接接触绝缘。
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公开(公告)号：US06420736B1
公开(公告)日：2002-07-16
申请号：US09626445
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L3300
摘要： A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
摘要翻译： 用于氮化镓（GaN）的发光二极管（LED）的窗结构包括GaN化合物的Mg +掺杂p窗口层; 薄的半透明金属接触层; 以及形成在所述接触层上的非晶电流扩散层。 接触层由NiOx / Au形成，电流扩散层由氧化铟锡形成。 二极管的p电极包括与电流扩展层形成欧姆连接的钛粘合层和与Mg +掺杂窗口层的肖特基二极管连接。
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