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    High-K metal gate electrode structures formed by early cap layer adaptation
    1.
    发明授权
    High-K metal gate electrode structures formed by early cap layer adaptation 有权
    通过早期盖层适应形成的高K金属栅电极结构

    公开(公告)号：US08664057B2

    公开(公告)日：2014-03-04

    申请号：US13565970

    申请日：2012-08-03

    申请人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

    发明人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

    IPC分类号： H01L21/8238 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/28 ,  H01L21/44 ,  H01L21/8234

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823828

    摘要： When forming high-k metal gate electrode structures in transistors of different conductivity type while also incorporating an embedded strain-inducing semiconductor alloy selectively in one type of transistor, superior process uniformity may be accomplished by selectively reducing the thickness of a dielectric cap material of a gate layer stack above the active region of transistors which do not receive the strain-inducing semiconductor alloy. In this case, superior confinement and thus integrity of sensitive gate materials may be accomplished in process strategies in which the sophisticated high-k metal gate electrode structures are formed in an early manufacturing stage, while, in a replacement gate approach, superior process uniformity is achieved upon exposing the surface of a placeholder electrode material.

    摘要翻译： 当在不同导电类型的晶体管中形成高k金属栅极电极结构时，同时在一种类型的晶体管中选择性地并入嵌入式应变诱导半导体合金，可以通过选择性地减小介电帽材料的厚度来实现优异的工艺均匀性 栅极层堆叠在不接收应变诱导半导体合金的晶体管的有源区上方。 在这种情况下，可以在早期制造阶段中形成复杂的高k金属栅极电极结构的工艺策略中实现优异的限制和因此敏感栅极材料的完整性，而在替代栅极方法中，优良的工艺均匀性是 在暴露观察者电极材料的表面时实现。

    HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER ADAPTATION
    2.
    发明申请
    HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER ADAPTATION 有权
    高K金属电极结构由早期盖层适应形成

    公开(公告)号：US20130034942A1

    公开(公告)日：2013-02-07

    申请号：US13565970

    申请日：2012-08-03

    申请人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

    发明人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823828

    摘要： When forming high-k metal gate electrode structures in transistors of different conductivity type while also incorporating an embedded strain-inducing semiconductor alloy selectively in one type of transistor, superior process uniformity may be accomplished by selectively reducing the thickness of a dielectric cap material of a gate layer stack above the active region of transistors which do not receive the strain-inducing semiconductor alloy. In this case, superior confinement and thus integrity of sensitive gate materials may be accomplished in process strategies in which the sophisticated high-k metal gate electrode structures are formed in an early manufacturing stage, while, in a replacement gate approach, superior process uniformity is achieved upon exposing the surface of a placeholder electrode material.

    摘要翻译： 当在不同导电类型的晶体管中形成高k金属栅极电极结构时，同时在一种类型的晶体管中选择性地并入嵌入式应变诱导半导体合金，可以通过选择性地减小介电帽材料的厚度来实现优异的工艺均匀性 栅极层堆叠在不接收应变诱导半导体合金的晶体管的有源区上方。 在这种情况下，可以在早期制造阶段中形成复杂的高k金属栅极电极结构的工艺策略中实现优异的限制和因此敏感栅极材料的完整性，而在替代栅极方法中，优良的工艺均匀性是 在暴露观察者电极材料的表面时实现。

    Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum
    7.
    发明授权
    Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum 有权
    通过使用镧在晶体管制造后的高K栅电极结构中的功函数调整

    公开(公告)号：US08653605B2

    公开(公告)日：2014-02-18

    申请号：US13689992

    申请日：2012-11-30

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L21/70 ,  H01L27/088

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum
    8.
    发明授权
    Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum 有权
    通过使用镧在晶体管制造后的高k栅电极结构中的功函数调整

    公开(公告)号：US08343837B2

    公开(公告)日：2013-01-01

    申请号：US12691192

    申请日：2010-01-21

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L21/8234 ,  H01L21/8238

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY AN OFFSET SPACER USED TO DETERMINE AN OFFSET OF A STRAIN-INDUCING SEMICONDUCTOR ALLOY
    9.
    发明申请
    MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY AN OFFSET SPACER USED TO DETERMINE AN OFFSET OF A STRAIN-INDUCING SEMICONDUCTOR ALLOY 有权
    通过用于确定应变诱导半导体合金的偏移的偏移间隔来保持高K栅极堆叠的完整性

    公开(公告)号：US20100244155A1

    公开(公告)日：2010-09-30

    申请号：US12748992

    申请日：2010-03-29

    申请人： Richard Carter ,  Sven Beyer ,  Martin Trentzsch

    发明人： Richard Carter ,  Sven Beyer ,  Martin Trentzsch

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/28

    CPC分类号： H01L29/66545 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

    摘要： In sophisticated transistor elements including a high-k gate metal stack, the integrity of the sensitive gate materials may be ensured by a spacer element that may be concurrently used as an offset spacer for defining a lateral offset of a strain-inducing semiconductor alloy. The cap material of the sophisticated gate stack may be removed without compromising integrity of the offset spacer by providing a sacrificial spacer element. Consequently, an efficient strain-inducing mechanism may be obtained in combination with the provision of a sophisticated gate stack with the required material integrity, while reducing overall process complexity compared to conventional strategies.

    摘要翻译： 在包括高k栅极金属堆叠的复杂晶体管元件中，敏感栅极材料的完整性可以通过间隔元件来确保，间隔元件可以同时用作用于限定应变诱导半导体合金的横向偏移的偏移间隔物。 可以通过提供牺牲间隔元件而不损害偏移间隔物的完整性来移除复杂栅极堆叠的盖材料。 因此，与常规策略相比，可以与提供具有所需材料完整性的复杂的栅极叠层相结合，同时降低总体工艺复杂性，可以获得有效的应变诱导机构。

    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM
    10.
    发明申请
    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
    通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整

    公开(公告)号：US20140015058A1

    公开(公告)日：2014-01-16

    申请号：US13689992

    申请日：2012-11-30

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L27/088

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。