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    Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum
    1.
    发明授权
    Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum 有权
    通过使用镧在晶体管制造后的高K栅电极结构中的功函数调整

    公开(公告)号：US08653605B2

    公开(公告)日：2014-02-18

    申请号：US13689992

    申请日：2012-11-30

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L21/70 ,  H01L27/088

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum
    2.
    发明授权
    Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum 有权
    通过使用镧在晶体管制造后的高k栅电极结构中的功函数调整

    公开(公告)号：US08343837B2

    公开(公告)日：2013-01-01

    申请号：US12691192

    申请日：2010-01-21

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L21/8234 ,  H01L21/8238

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM
    3.
    发明申请
    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
    通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整

    公开(公告)号：US20140015058A1

    公开(公告)日：2014-01-16

    申请号：US13689992

    申请日：2012-11-30

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L27/088

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM
    4.
    发明申请
    WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
    通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整

    公开(公告)号：US20100193872A1

    公开(公告)日：2010-08-05

    申请号：US12691192

    申请日：2010-01-21

    申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

    IPC分类号： H01L27/088 ,  H01L21/8234

    CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

    摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

    摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

    REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL
    9.
    发明申请
    REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL 审中-公开
    通过执行低温天线降低场效应晶体管中高K电介质的等效厚度

    公开(公告)号：US20120238086A1

    公开(公告)日：2012-09-20

    申请号：US13422221

    申请日：2012-03-16

    申请人： Klaus Hempel ,  Robert Binder ,  Joachim Metzger

    发明人： Klaus Hempel ,  Robert Binder ,  Joachim Metzger

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28185 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

    摘要： When forming sophisticated high-k metal gate electrode structures, for instance on the basis of a replacement gate approach, superior interface characteristics may be obtained on the basis of using a thermally grown base material, wherein the electrically effective thickness may be reduced on the basis of a low temperature anneal process. Consequently, the superior interface characteristics of a thermally grown base material may be provided without requiring high temperature anneal processes, as are typically applied in conventional strategies using a very thin oxide layer formed on the basis of a wet oxidation chemistry.

    摘要翻译： 当形成复杂的高k金属栅极电极结构时，例如基于替代栅极方法，可以在使用热生长的基材的基础上获得优异的界面特性，其中可以基于 的低温退火工艺。 因此，可以提供热生长的基材的优异的界面特性，而不需要高温退火工艺，如通常在使用基于湿氧化学化学形成的非常薄的氧化物层的常规策略中应用的那样。