公开(公告)号：US20140015058A1

公开(公告)日：2014-01-16

申请号：US13689992

申请日：2012-11-30

申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

IPC分类号： H01L27/088

CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

公开(公告)号：US20100193872A1

公开(公告)日：2010-08-05

申请号：US12691192

申请日：2010-01-21

申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

公开(公告)号：US08653605B2

公开(公告)日：2014-02-18

申请号：US13689992

申请日：2012-11-30

申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

IPC分类号： H01L21/70 ,  H01L27/088

CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

公开(公告)号：US08343837B2

公开(公告)日：2013-01-01

申请号：US12691192

申请日：2010-01-21

申请人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

发明人： Richard Carter ,  Sven Beyer ,  Joachim Metzger ,  Robert Binder

IPC分类号： H01L21/8234 ,  H01L21/8238

CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

摘要翻译： 高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如 作为氮化钛。 为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

公开(公告)号：US20100327373A1

公开(公告)日：2010-12-30

申请号：US12787461

申请日：2010-05-26

申请人： Richard Carter ,  Falk Graetsch ,  Martin Trentzsch ,  Sven Beyer ,  Berthold Reimer ,  Robert Binder ,  Boris Bayha

发明人： Richard Carter ,  Falk Graetsch ,  Martin Trentzsch ,  Sven Beyer ,  Berthold Reimer ,  Robert Binder ,  Boris Bayha

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659

摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.

摘要翻译： 在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。 为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

公开(公告)号：US08445344B2

公开(公告)日：2013-05-21

申请号：US12787461

申请日：2010-05-26

申请人： Richard Carter ,  Falk Graetsch ,  Martin Trentzsch ,  Sven Beyer ,  Berthold Reimer ,  Robert Binder ,  Boris Bayha

发明人： Richard Carter ,  Falk Graetsch ,  Martin Trentzsch ,  Sven Beyer ,  Berthold Reimer ,  Robert Binder ,  Boris Bayha

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/8238

CPC分类号： H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659

摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.

摘要翻译： 在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。 为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

公开(公告)号：US08664057B2

公开(公告)日：2014-03-04

申请号：US13565970

申请日：2012-08-03

申请人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

发明人： Rohit Pal ,  Sven Beyer ,  Andy Wei ,  Richard Carter

IPC分类号： H01L21/8238 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/28 ,  H01L21/44 ,  H01L21/8234

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823828

摘要： When forming high-k metal gate electrode structures in transistors of different conductivity type while also incorporating an embedded strain-inducing semiconductor alloy selectively in one type of transistor, superior process uniformity may be accomplished by selectively reducing the thickness of a dielectric cap material of a gate layer stack above the active region of transistors which do not receive the strain-inducing semiconductor alloy. In this case, superior confinement and thus integrity of sensitive gate materials may be accomplished in process strategies in which the sophisticated high-k metal gate electrode structures are formed in an early manufacturing stage, while, in a replacement gate approach, superior process uniformity is achieved upon exposing the surface of a placeholder electrode material.

摘要翻译： 当在不同导电类型的晶体管中形成高k金属栅极电极结构时，同时在一种类型的晶体管中选择性地并入嵌入式应变诱导半导体合金，可以通过选择性地减小介电帽材料的厚度来实现优异的工艺均匀性 栅极层堆叠在不接收应变诱导半导体合金的晶体管的有源区上方。 在这种情况下，可以在早期制造阶段中形成复杂的高k金属栅极电极结构的工艺策略中实现优异的限制和因此敏感栅极材料的完整性，而在替代栅极方法中，优良的工艺均匀性是 在暴露观察者电极材料的表面时实现。

公开(公告)号：US20120193727A1

公开(公告)日：2012-08-02

申请号：US13444955

申请日：2012-04-12

申请人： Richard Carter ,  Martin Trentzsch ,  Sven Beyer ,  Rohit Pal

发明人： Richard Carter ,  Martin Trentzsch ,  Sven Beyer ,  Rohit Pal

IPC分类号： H01L27/088

CPC分类号： H01L21/823462 ,  H01L21/28176 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

摘要： Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.

摘要翻译： 复杂的栅极电极结构可以通过在进行用于稳定敏感栅极介电材料的处理之前提供包括可能扩散到栅极电介质材料中的所需物质的覆盖层来形成。 以这种方式，与常规策略相比，可以基于用于阈值调节物质的降低的温度和剂量来形成复杂的高k金属栅电极结构。 此外，可以为两种类型的晶体管沉积单个含金属的电极材料。

公开(公告)号：US08367495B2

公开(公告)日：2013-02-05

申请号：US12749112

申请日：2010-03-29

申请人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

发明人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

IPC分类号： H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

摘要翻译： 在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。 为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。 中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

公开(公告)号：US20110266625A1

公开(公告)日：2011-11-03

申请号：US12963253

申请日：2010-12-08

申请人： Richard Carter ,  Sven Beyer ,  Markus Lenski ,  Patrick Press

发明人： Richard Carter ,  Sven Beyer ,  Markus Lenski ,  Patrick Press

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/6656 ,  H01L21/28247 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： Gate failures in sophisticated high-k metal gate electrode structures formed in an early manufacturing stage may be reduced by forming a protective liner material after the incorporation of a strain-inducing semiconductor alloy and prior to performing any critical wet chemical processes. In this manner, attacks in the sensitive gate materials after the incorporation of the strain-inducing semiconductor material may be avoided, without influencing the further processing of the device. In this manner, very sophisticated circuit designs may be applied in sophisticated gate first approaches.

摘要翻译： 在早期制造阶段形成的复杂的高k金属栅电极结构中的栅极故障可以通过在引入应变诱导半导体合金之后并且在执行任何关键的湿化学工艺之前形成保护性衬垫材料来减少。 以这种方式，可以避免在引入应变诱导半导体材料之后在敏感栅极材料中的攻击，而不影响器件的进一步处理。 以这种方式，非常复杂的电路设计可以应用于复杂的门第一方法。