公开(公告)号：US20140087066A1

公开(公告)日：2014-03-27

申请号：US13624946

申请日：2012-09-23

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Deyan WANG ,  Jibin SUN ,  Peng-Wei CHUANG ,  Peter TREFONAS, III ,  Cong LIU

IPC: B05D5/12 ,  C08F30/04

CPC classification number: C08F220/10 ,  C08F220/18 ,  G03F7/091 ,  G03F7/094

Abstract: Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

Abstract translation: 提供了包含适合用作旋涂金属硬掩模的某些有机金属低聚物的组合物，其中可以调整这些组合物以提供具有一定范围的蚀刻选择性的金属氧化物硬掩模。 还提供了使用本发明组合物沉积金属氧化物硬掩模的方法。

公开(公告)号：US20130115559A1

公开(公告)日：2013-05-09

申请号：US13668218

申请日：2012-11-03

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Young Cheol BAE ,  Jibin SUN ,  Seung-Hyun LEE ,  Jong Keun PARK ,  Cecily ANDES

IPC: G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I): wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供通过负色调显影形成光刻图案的方法。 所述方法采用光致抗蚀剂组合物，其包含具有下列通式（I）的单元的聚合物：其中：R1表示氢或C1至C3烷基; a表示1〜3的整数， 并且b表示0或1.该方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20130302735A1

公开(公告)日：2013-11-14

申请号：US13668217

申请日：2012-11-03

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Jibin SUN ,  Young Cheol BAE ,  Jong Keun PARK ,  Seung-Hyun LEE ,  Cecily ANDES

IPC: G03F7/027 ,  G03F7/004

CPC classification number: G03F7/027 ,  G03F7/0041 ,  G03F7/0397 ,  G03F7/2041

Abstract: Provided are monomers, polymers, photoresist compositions and coated substrates which find use in the formation of photolithographic patterns by negative tone development. The monomers are of the following general formula (I): wherein: R1 represents hydrogen or methyl. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供单体，聚合物，光致抗蚀剂组合物和涂覆的基底，其通过负色调发展用于形成光刻图案。 单体具有以下通式（I）：其中：R1表示氢或甲基。 该方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20150210793A1

公开(公告)日：2015-07-30

申请号：US14588385

申请日：2014-12-31

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jong Keun PARK ,  Jibin SUN ,  Christopher D. GILMORE ,  Jieqian ZHANG ,  Phillip D. HUSTAD ,  Peter TREFONAS, III ,  Kathleen M. O'Connell

IPC: C08F212/08 ,  C08F212/12 ,  C09D133/10 ,  C09D133/12 ,  C09D125/16 ,  C08F220/18 ,  C09D125/14

CPC classification number: C08F212/08 ,  C08F12/22 ,  C08F12/26 ,  C08F12/30 ,  C08F12/32 ,  C08F212/12 ,  C09D125/14 ,  C09D125/16 ,  C09D133/06 ,  C08F212/32 ,  C08F2220/302

Abstract: A crosslinkable polymer comprising: a first unit of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X1 is a monovalent electron donating group; X2 is a divalent electron donating group; Ar1 and Ar2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar1 or Ar2; m and n are each an integer of 1 or more; and each R1 is independently a monovalent group; and a second unit chosen from general formulae (III) and (IV): wherein R7 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl, R8 is chosen from optionally substituted C1 to C10 alkyl, and Ar3 is an optionally substituted aryl group. Underlayer compositions comprise the crosslinkable polymer and a solvent. The crosslinkable polymers and underlayer compositions find particular applicability in the manufacture of semiconductor devices or data storage devices for the formation of high resolution patterns.

Abstract translation: 一种可交联聚合物，其包含：以下通式（I-A）或（I-B）的第一单元：其中：P为可聚合官能团; L是单键或m + 1价连接基团; X1是单价给电子基团; X2是二价给电子基团; Ar1和Ar2分别为三价和二价芳基，环丁烯环的碳原子与Ar1或Ar2的相同芳环上的相邻碳原子键合; m和n分别为1以上的整数， 并且每个R 1独立地是一价基团; 和选自通式（III）和（IV）的第二单元：其中R 7选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟烷基，R 8选自任选取代的C 1至C 10烷基，Ar 3是 任选取代的芳基。 底层组合物包含可交联聚合物和溶剂。 可交联聚合物和底层组合物特别适用于制造用于形成高分辨率图案的半导体器件或数据存储装置。

公开(公告)号：US20140186770A1

公开(公告)日：2014-07-03

申请号：US14145551

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad AQAD ,  Cheng-Bai XU ,  Irvinder KAUR ,  Mingqi LI ,  Jibin SUN ,  Cecily ANDES

IPC: G03C1/73 ,  G03F7/20

CPC classification number: G03F7/004 ,  C07C303/32 ,  C07C2603/26 ,  G03F7/0042 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20

Abstract: Dendritic compounds are provided. The dendritic compounds include an anionic dendron that has a focal point having an anionic group and a linking group, and a photoreactive cation. The dendritic compounds find particular use as photoacid generators. Also provided are photoresist compositions that include such a dendritic compound, as well as methods of forming electronic devices with the photoresist compositions. The dendritic compounds, photoresist compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供树枝状化合物。 树枝状化合物包括具有阴离子基团和连接基团的焦点的阴离子树突，以及光反应性阳离子。 树枝状化合物特别用作光致酸发生剂。 还提供了包括这种树枝状化合物的光致抗蚀剂组合物，以及用光致抗蚀剂组合物形成电子器件的方法。 树枝状化合物，光致抗蚀剂组合物和方法在半导体器件的制造中特别适用。