公开(公告)号：US20200379353A1

公开(公告)日：2020-12-03

申请号：US16871228

申请日：2020-05-11

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder KAUR ,  Colin LIU ,  Xisen Hou ,  Kevin Rowell ,  Mingqi LI ,  Cheng-Bai Xu

IPC: G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/311 ,  C07C309/28

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

公开(公告)号：US20200004152A1

公开(公告)日：2020-01-02

申请号：US16449955

申请日：2019-06-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder KAUR ,  Cong Liu ,  Doris Kang ,  Chunyi Wu

IPC: G03F7/11 ,  C08F220/28 ,  C08F220/38 ,  C09D133/16 ,  C09D133/14

Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20150212414A1

公开(公告)日：2015-07-30

申请号：US13691689

申请日：2012-11-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Gerhard POHLERS ,  Cong LIU ,  Cheng-Bai XU ,  Kevin ROWELL ,  Irvinder KAUR

IPC: G03F7/039 ,  G03F7/30 ,  G03F7/16 ,  C07D333/48 ,  G03F7/20

CPC classification number: G03F7/40 ,  C07C309/03 ,  C07C309/06 ,  C07D239/26 ,  C07D241/12 ,  C07D263/32 ,  C07D277/22 ,  C07D333/48 ,  G03F7/0397 ,  G03F7/09 ,  G03F7/091 ,  G03F7/11 ,  G03F7/30 ,  G03F7/405

Abstract: New ionic thermal acid generator compounds are provided. Also provided are photoresist compositions, antireflective coating compositions, and chemical trim overcoat compositions, and methods of using the compositions.

Abstract translation: 提供新的离子热酸发生剂化合物。 还提供了光致抗蚀剂组合物，抗反射涂料组合物和化学修饰外涂层组合物，以及使用该组合物的方法。

公开(公告)号：US20140186770A1

公开(公告)日：2014-07-03

申请号：US14145551

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad AQAD ,  Cheng-Bai XU ,  Irvinder KAUR ,  Mingqi LI ,  Jibin SUN ,  Cecily ANDES

IPC: G03C1/73 ,  G03F7/20

CPC classification number: G03F7/004 ,  C07C303/32 ,  C07C2603/26 ,  G03F7/0042 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20

Abstract: Dendritic compounds are provided. The dendritic compounds include an anionic dendron that has a focal point having an anionic group and a linking group, and a photoreactive cation. The dendritic compounds find particular use as photoacid generators. Also provided are photoresist compositions that include such a dendritic compound, as well as methods of forming electronic devices with the photoresist compositions. The dendritic compounds, photoresist compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供树枝状化合物。 树枝状化合物包括具有阴离子基团和连接基团的焦点的阴离子树突，以及光反应性阳离子。 树枝状化合物特别用作光致酸发生剂。 还提供了包括这种树枝状化合物的光致抗蚀剂组合物，以及用光致抗蚀剂组合物形成电子器件的方法。 树枝状化合物，光致抗蚀剂组合物和方法在半导体器件的制造中特别适用。