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    GAP-FILL METHODS
    2.
    发明申请
    GAP-FILL METHODS 有权
    GAP填充方法

    公开(公告)号：US20150348828A1

    公开(公告)日：2015-12-03

    申请号：US14582149

    申请日：2014-12-23

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Jae Hwan SIM ,  Jin Hong PARK ,  Jae-Bong LIM ,  Jung Kyu JO ,  Cheng-Bai XU ,  Jong Keun PARK ,  Mingqi LI ,  Phillip D. HUSTAD

    IPC: H01L21/762 ,  H01L21/3105

    CPC classification number: H01L21/76224 ,  H01L21/31058

    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元 式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇， 胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
    3.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20200379353A1

    公开(公告)日：2020-12-03

    申请号：US16871228

    申请日：2020-05-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder KAUR ,  Colin LIU ,  Xisen Hou ,  Kevin Rowell ,  Mingqi LI ,  Cheng-Bai Xu

    IPC: G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/311 ,  C07C309/28

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

    PHOTORESISTS COMPRISING AMIDE COMPONENT
    6.
    发明申请
    PHOTORESISTS COMPRISING AMIDE COMPONENT 审中-公开
    包含AMIDE组件的电影

    公开(公告)号：US20130344439A1

    公开(公告)日：2013-12-26

    申请号：US13926764

    申请日：2013-06-25

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Chunyi WU ,  Gerhard POHLERS ,  Gregory P. PROKOPOWICZ ,  Mingqi LI ,  Cheng-Bai XU

    IPC: G03F7/004

    Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer

    Abstract translation: 提供了新的光致抗蚀剂组合物，其包含包含酰胺基和多个羟基的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 和具有多个羟基的酰胺组分，其可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光生酸扩散的作用

    TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS
    7.
    发明申请
    TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS 审中-公开
    TOPCOAT组合物和光刻方法

    公开(公告)号：US20160130462A1

    公开(公告)日：2016-05-12

    申请号：US14929533

    申请日：2015-11-02

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Doris H. KANG ,  Deyan WANG ,  Cheng-Bai XU ,  Mingqi LI

    IPC: C09D133/16 ,  G03F7/11 ,  G03F7/20

    CPC classification number: C09D133/16 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041

    Abstract: A topcoat composition comprises: a matrix polymer; a surface active polymer comprising: a first unit comprising a group of the following general formula (I): wherein R1 represents H, F, C1 to C8 alkyl or C1 to C8 fluoroalkyl, optionally comprising one or more heteroatom; X1 represents oxygen, sulfur or NR2, wherein R2 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and a solvent. The surface active polymer is present in the composition in an amount less than the matrix polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

    Abstract translation: 面漆组合物包括：基质聚合物; 一种表面活性聚合物，其包含：包含以下通式（I）的基团的第一单元：其中R 1表示H，F，C 1至C 8烷基或C 1至C 8氟代烷基，任选地包含一个或多个杂原子; X 1表示氧，硫或NR 2，其中R 2选自氢和任选取代的C 1至C 10烷基; 和溶剂。 表面活性聚合物以小于基质聚合物的量存在于组合物中，并且表面活性聚合物具有比基质聚合物的表面能更低的表面能。 本发明在半导体器件的制造中作为光致抗蚀剂顶涂层的光刻工艺具有特别的适用性。

    GAP-FILL METHODS
    8.
    发明申请
    GAP-FILL METHODS 有权
    GAP填充方法

    公开(公告)号：US20150132921A1

    公开(公告)日：2015-05-14

    申请号：US14542428

    申请日：2014-11-14

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Jong Keun PARK ,  Cheng-Bai XU ,  Phillip D. Hustad ,  Mingqi LI

    IPC: H01L21/762

    CPC classification number: H01L21/76224

    Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 提供间隙填充方法。 所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团， 骨干 和（c）在温度下加热间隙填充组合物以使聚合物自交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

    DENDRITIC COMPOUNDS, PHOTORESIST COMPOSITIONS AND METHODS OF MAKING ELECTRONIC DEVICES
    9.
    发明申请
    DENDRITIC COMPOUNDS, PHOTORESIST COMPOSITIONS AND METHODS OF MAKING ELECTRONIC DEVICES 有权
    透明化合物，光电组合物和制造电子器件的方法

    公开(公告)号：US20140186770A1

    公开(公告)日：2014-07-03

    申请号：US14145551

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad AQAD ,  Cheng-Bai XU ,  Irvinder KAUR ,  Mingqi LI ,  Jibin SUN ,  Cecily ANDES

    IPC: G03C1/73 ,  G03F7/20

    CPC classification number: G03F7/004 ,  C07C303/32 ,  C07C2603/26 ,  G03F7/0042 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20

    Abstract: Dendritic compounds are provided. The dendritic compounds include an anionic dendron that has a focal point having an anionic group and a linking group, and a photoreactive cation. The dendritic compounds find particular use as photoacid generators. Also provided are photoresist compositions that include such a dendritic compound, as well as methods of forming electronic devices with the photoresist compositions. The dendritic compounds, photoresist compositions and methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供树枝状化合物。 树枝状化合物包括具有阴离子基团和连接基团的焦点的阴离子树突，以及光反应性阳离子。 树枝状化合物特别用作光致酸发生剂。 还提供了包括这种树枝状化合物的光致抗蚀剂组合物，以及用光致抗蚀剂组合物形成电子器件的方法。 树枝状化合物，光致抗蚀剂组合物和方法在半导体器件的制造中特别适用。

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