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    PHOTORESIST PATTERN TRIMMING METHODS
    2.
    发明申请
    PHOTORESIST PATTERN TRIMMING METHODS 审中-公开
    光电图案修剪方法

    公开(公告)号：US20130171574A1

    公开(公告)日：2013-07-04

    申请号：US13731940

    申请日：2012-12-31

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Cheng-Bai XU

    IPC: G03F7/38

    CPC classification number: G03F7/38 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/31138

    Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

    Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括在光致抗蚀剂图案上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包括基质聚合物，具有氟取代的游离酸和溶剂，修剪组合物不含交联剂。 涂覆的半导体衬底被加热以在抗蚀剂图案的表面区域中引起抗蚀剂聚合物的极性变化。 光致抗蚀剂图案与显影液接触以除去光刻胶图案的表面区域。 该方法在半导体器件的制造中特别适用于形成非常细的光刻特征。

    PHOTORESIST PATTERN TRIMMING METHODS
    3.
    发明申请
    PHOTORESIST PATTERN TRIMMING METHODS 审中-公开
    光电图案修剪方法

    公开(公告)号：US20170045822A1

    公开(公告)日：2017-02-16

    申请号：US15243937

    申请日：2016-08-22

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai XU

    IPC: G03F7/38 ,  H01L21/027 ,  H01L21/311

    CPC classification number: G03F7/38 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/31138

    Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

    Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括在光致抗蚀剂图案上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包括基质聚合物，具有氟取代的游离酸和溶剂，修剪组合物不含交联剂。 涂覆的半导体衬底被加热以在抗蚀剂图案的表面区域中引起抗蚀剂聚合物的极性变化。 光致抗蚀剂图案与显影液接触以除去光刻胶图案的表面区域。 该方法在半导体器件的制造中特别适用于形成非常细的光刻特征。

    PHOTORESIST PATTERN TRIMMING METHODS
    4.
    发明申请
    PHOTORESIST PATTERN TRIMMING METHODS 有权

    公开(公告)号：US20160141171A1

    公开(公告)日：2016-05-19

    申请号：US14938348

    申请日：2015-11-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai XU

    IPC: H01L21/027

    CPC classification number: H01L21/0273 ,  G03F7/0392 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/308

    Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

    ION IMPLANTATION METHODS
    5.
    发明申请
    ION IMPLANTATION METHODS 有权
    离子植入方法

    公开(公告)号：US20150214056A1

    公开(公告)日：2015-07-30

    申请号：US14145674

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai XU ,  Cheng Han WU ,  Dong Won CHUNG ,  Yoshihiro YAMAMOTO ,  George G. BARCLAY ,  Gerhard POHLERS

    IPC: H01L21/266 ,  H01L21/02 ,  H01L21/3105

    CPC classification number: H01L21/266 ,  G03F7/091 ,  G03F7/405 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

    Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了在半导体器件中形成离子注入区域的方法。 所述方法包括：（a）提供具有要离子注入的多个区域的半导体衬底; （b）在半导体衬底上形成光致抗蚀剂图案，其中光致抗蚀剂图案由包含具有酸不稳定基团的基质聚合物，光致酸产生剂和溶剂的化学放大光致抗蚀剂组合物形成; （c）在所述光致抗蚀剂图案上涂覆去除组合物，其中所述去除组合物包含：基体聚合物; 选自热酸发生剂，光酸产生剂及其组合的酸发生剂; 和溶剂; （d）将所述涂覆的半导体衬底暴露于所述除酸组合物中从所述酸产生器产生酸的条件; （e）使涂覆的半导体衬底与漂洗剂接触以从衬底去除残留的去除组合物和浮渣; 和（f）使用光刻胶图案作为植入物掩模离子注入半导体衬底的多个区域。 该方法在半导体器件的制造中具有特别的适用性。

    PATTERN FORMATION METHODS
    7.
    发明申请
    PATTERN FORMATION METHODS 有权

    公开(公告)号：US20210200081A1

    公开(公告)日：2021-07-01

    申请号：US17110441

    申请日：2020-12-03

    Applicant: Rohm and Haas Electronic Materials LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Cheng-Bai XU ,  Cong Liu ,  James Field Cameron ,  Jae-Bong Lim ,  Xisen Hou ,  Jae-Hwan Sim

    IPC: G03F7/00 ,  G03F7/039 ,  G03F7/038

    Abstract: Pattern formation methods comprise: (a) forming an underlayer on a substrate, wherein the underlayer has a thickness of 5 microns or more; (b) forming a photoresist layer on the underlayer, wherein the photoresist layer is formed from a photoresist composition comprising a silicon-containing polymer, a photoacid generator, and a solvent, wherein the silicon-containing polymer comprises as polymerized units a monomer of formula (I): wherein: R1 is independently chosen from H, F, OH, C1-C6 alkyl, C1-C6 haloalkyl, C1-C6 hydroxy-haloalkyl, C1-C6 alkoxy, or C1-C6 haloalkoxy; R2 is independently chosen from H or F; R3 is independently chosen from H, F, CH3, CF3, CHF2, or CH2F; comprises an acid cleavable group; and m is an integer from 0 to 2; (c) patternwise exposing the photoresist layer to activating radiation; (d) developing the exposed photoresist layer to form a photoresist pattern; and (f) transferring the pattern of the photoresist pattern into the underlayer using the photoresist pattern as an etch mask. The invention has particular applicability in the formation of three-dimensional patterns such as staircase patterns used in the formation of semiconductor devices.

    PATTERN FORMATION METHODS
    8.
    发明申请
    PATTERN FORMATION METHODS 审中-公开
    模式形成方法

    公开(公告)号：US20160124309A1

    公开(公告)日：2016-05-05

    申请号：US14927354

    申请日：2015-10-29

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Choong-Bong LEE ,  Stefan J. CAPORALE ,  Jason A. DeSISTO ,  Jong Keun PARK ,  Cong LIU ,  Cheng-Bai XU ,  Cecily ANDES

    IPC: G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/16

    CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/281 ,  C08F2220/283 ,  C09D133/08 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38

    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

    Abstract translation: 形成电子器件的方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一个或多个层上形成光致抗蚀剂层，其中光致抗蚀剂层由组合物形成，所述组合物包括：包含具有酸不稳定基团的单元的基质聚合物; 光致酸发生器; 和有机溶剂; （c）在光致抗蚀剂层上涂覆光致抗蚀剂外涂层组合物，其中外涂层组合物包含：基体聚合物; 添加剂聚合物; 一个基本的猝灭剂; 和有机溶剂; 其中所述添加剂聚合物具有比所述基体聚合物的表面能更低的表面能，并且其中所述添加剂聚合物以所述外涂层组合物的总固体为基准存在于所述外涂层组合物中的量为1至20重量％; （d）将光致抗蚀剂层暴露于活化辐射; （e）在曝光后烘烤过程中加热基材; 和（f）用有机溶剂显影剂显影曝光的膜。 该方法在半导体制造业中具有特殊的适用性。

    GAP-FILL METHODS
    9.
    发明申请
    GAP-FILL METHODS 有权
    GAP填充方法

    公开(公告)号：US20150348828A1

    公开(公告)日：2015-12-03

    申请号：US14582149

    申请日：2014-12-23

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Jae Hwan SIM ,  Jin Hong PARK ,  Jae-Bong LIM ,  Jung Kyu JO ,  Cheng-Bai XU ,  Jong Keun PARK ,  Mingqi LI ,  Phillip D. HUSTAD

    IPC: H01L21/762 ,  H01L21/3105

    CPC classification number: H01L21/76224 ,  H01L21/31058

    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元 式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇， 胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

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