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公开(公告)号：US20190204743A1
公开(公告)日：2019-07-04
申请号：US16236725
申请日：2018-12-31
发明人： Joshua Kaitz , Tomas Marangoni , Emad Aqad , Amy M. Kwok , Mingqi Li , Thomas Cardolaccia , Choong-Bong Lee , Ke Yang , Cong Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/038 , G03F7/039 , C09D133/16 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , C08F220/28 , C08F220/24
CPC分类号： G03F7/11 , C08F220/24 , C08F220/28 , C08F2220/283 , C09D133/16 , G03F7/0045 , G03F7/038 , G03F7/039 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/322 , G03F7/38
摘要： New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).
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公开(公告)号：US09482948B2
公开(公告)日：2016-11-01
申请号：US14919822
申请日：2015-10-22
发明人： Young Cheol Bae , Deyan Wang , Thomas Cardolaccia , Seokho Kang , Rosemary Bell
IPC分类号： G03F7/004 , G03F7/40 , G03F7/038 , H01L21/027 , C07C69/54 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32 , G03F7/16 , C08F220/28
CPC分类号： G03F7/0382 , C07C69/54 , C07C2603/74 , C08F2220/283 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/0276
摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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公开(公告)号：US11809077B2
公开(公告)日：2023-11-07
申请号：US17198749
申请日：2021-03-11
发明人： Thomas Cardolaccia , Jason A. DeSisto , Choong-Bong Lee , Mingqi Li , Tomas Marangoni , Chunyi Wu , Cong Liu , Gregory P. Prokopowicz
IPC分类号： G03F7/004 , C08F220/28 , C08F220/18 , G03F7/027
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/281 , G03F7/027
摘要： A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1):
and a solvent.-
公开(公告)号：US11829069B2
公开(公告)日：2023-11-28
申请号：US16236725
申请日：2018-12-31
发明人： Joshua Kaitz , Tomas Marangoni , Emad Aqad , Amy M. Kwok , Mingqi Li , Thomas Cardolaccia , Choong-Bong Lee , Ke Yang , Cong Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/16 , G03F7/32 , G03F7/38 , C09D133/16 , C08F220/24 , C08F220/28 , C08F220/18
CPC分类号： G03F7/11 , C08F220/24 , C08F220/283 , C09D133/16 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/039 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/322 , G03F7/38 , C08F220/1808
摘要： New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).
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