公开(公告)号：US11506981B2

公开(公告)日：2022-11-22

申请号：US16872878

申请日：2020-05-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  H01L21/027 ,  C08F212/14 ,  C08F220/18

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20220128906A1

公开(公告)日：2022-04-28

申请号：US17081258

申请日：2020-10-27

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Kevin Rowell

IPC: G03F7/039 ,  H01L21/027 ,  H01L21/311

Abstract: Photoresist pattern trimming compositions comprise: a polymer comprising as polymerized units a monomer comprising an acid-decomposable group, the decomposition of which group forms a carboxylic acid group on the polymer; a non-polymeric acid or a non-polymeric thermal acid generator; and an organic-based solvent system comprising one or more organic solvents. Methods of trimming photoresist patterns involve applying such pattern trimming compositions to a photoresist pattern that is formed from a photoresist composition comprising a photoacid generator and a polymer comprising acid-decomposable groups. The photoresist pattern trimming compositions and pattern formation methods find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

公开(公告)号：US11003074B2

公开(公告)日：2021-05-11

申请号：US15960825

申请日：2018-04-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Cong Liu ,  Irvinder Kaur

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/16 ,  G03F7/00 ,  C08F220/68 ,  H01L21/027 ,  C09D133/16 ,  C09D133/02 ,  G03F7/039 ,  G03F7/004 ,  C08F212/14

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20200379351A1

公开(公告)日：2020-12-03

申请号：US16872878

申请日：2020-05-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  C08F220/18 ,  C08F212/14 ,  H01L21/027

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US10684549B2

公开(公告)日：2020-06-16

申请号：US15846658

申请日：2017-12-19

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Xisen Hou ,  Mingqi Li

IPC: G03F7/40

Abstract: Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US10578969B2

公开(公告)日：2020-03-03

申请号：US16245631

申请日：2019-01-11

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38 ,  G03F7/20

Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20190204743A1

公开(公告)日：2019-07-04

申请号：US16236725

申请日：2018-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Joshua Kaitz ,  Tomas Marangoni ,  Emad Aqad ,  Amy M. Kwok ,  Mingqi Li ,  Thomas Cardolaccia ,  Choong-Bong Lee ,  Ke Yang ,  Cong Liu

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C09D133/16 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C08F220/28 ,  C08F220/24

CPC classification number: G03F7/11 ,  C08F220/24 ,  C08F220/28 ,  C08F2220/283 ,  C09D133/16 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

公开(公告)号：US10221131B2

公开(公告)日：2019-03-05

申请号：US15167223

申请日：2016-05-27

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Cheng-Bai Xu

IPC: G03F7/004 ,  C07C309/17 ,  C07D307/00 ,  C07D493/18 ,  C07C381/12 ,  H01L21/027 ,  C07C309/01 ,  G03F7/039

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

公开(公告)号：US20180118970A1

公开(公告)日：2018-05-03

申请号：US15730876

申请日：2017-10-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Doris Kang ,  Mingqi Li ,  Deyan Wang ,  Huaxing Zhou

IPC: C09D133/16 ,  C09D133/10 ,  C09D133/08 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32 ,  C08L33/16

CPC classification number: G03F7/11 ,  C08F20/34 ,  C08F222/40 ,  C08L33/16 ,  C08L2205/025 ,  C09D133/08 ,  C09D133/10 ,  C09D133/16 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/327 ,  H01L21/0274

Abstract: Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

公开(公告)号：US20170123314A1

公开(公告)日：2017-05-04

申请号：US15297556

申请日：2016-10-19

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Kevin Rowell ,  Gerhard Pohlers ,  Mingqi Li

IPC: G03F7/004 ,  C07D213/61 ,  C07D239/26 ,  G03F7/40 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C07C309/06 ,  C07C309/58

CPC classification number: G03F7/0045 ,  C07C309/01 ,  C07C309/28 ,  C07C309/33 ,  C07C309/39 ,  C07C309/40 ,  C07C309/58 ,  C07C2603/74 ,  C07D213/61 ,  C07D239/26 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2022 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405

Abstract: Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.