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    III-Nitride Metal Insulator Semiconductor Field effect Transistor
    1.
    发明申请
    III-Nitride Metal Insulator Semiconductor Field effect Transistor 有权
    III-Nitride金属绝缘子半导体场效应晶体管

    公开(公告)号：US20130026495A1

    公开(公告)日：2013-01-31

    申请号：US13456039

    申请日：2012-04-25

    申请人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

    发明人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

    IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/205

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/2006 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/66522 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78

    摘要： A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.

    摘要翻译： 场效应晶体管（FET）包括III-氮化物沟道层，沟道层上的III-氮化物阻挡层，其中该阻挡层具有比该沟道层大的能带隙，该电极与III 氮化物层，电耦合到III族氮化物层之一的漏电极，用于将栅极电极与阻挡层电绝缘的栅极绝缘体层堆叠和沟道层，栅极绝缘体层堆叠包括绝缘体层，例如 SiN和AlN层，栅极电极在源电极和漏电极之间的区域中并与绝缘体层接触，并且其中AlN层与III-氮化物层之一接触。

    III-nitride metal insulator semiconductor field effect transistor
    2.
    发明授权
    III-nitride metal insulator semiconductor field effect transistor 有权
    III族氮化物金属绝缘子半导体场效应晶体管

    公开(公告)号：US08853709B2

    公开(公告)日：2014-10-07

    申请号：US13456039

    申请日：2012-04-25

    申请人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

    发明人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

    IPC分类号： H01L29/778 ,  H01L29/20

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/2006 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/66522 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78

    摘要： A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.

    摘要翻译： 场效应晶体管（FET）包括III-氮化物沟道层，沟道层上的III-氮化物阻挡层，其中该阻挡层具有比该沟道层大的能带隙，该电极与III 氮化物层，电耦合到III族氮化物层之一的漏电极，用于将栅极电极与阻挡层电绝缘的栅极绝缘体层堆叠和沟道层，栅极绝缘体层堆叠包括绝缘体层，例如 SiN和AlN层，栅电极在源电极和漏电极之间的区域中并与绝缘体层接触，并且其中AlN层与III-氮化物层之一接触。

    Shaver
    4.
    外观设计
    Shaver 有权

    公开(公告)号：USD856583S1

    公开(公告)日：2019-08-13

    申请号：US29650205

    申请日：2018-06-05

    申请人： Xu Chen

    设计人： Xu Chen

    Method for preparing graphene by using two-dimensional confined space between the layers of inorganic layered materials
    6.
    发明授权
    Method for preparing graphene by using two-dimensional confined space between the layers of inorganic layered materials 有权
    通过使用无机层状材料层之间的二维密闭空间来制备石墨烯的方法

    公开(公告)号：US08906337B2

    公开(公告)日：2014-12-09

    申请号：US13980715

    申请日：2012-03-27

    申请人： Wensheng Yang ,  Jie Sun ,  Haimei Liu ,  Xu Chen ,  Xue Duan

    发明人： Wensheng Yang ,  Jie Sun ,  Haimei Liu ,  Xu Chen ,  Xue Duan

    IPC分类号： C01B31/04

    CPC分类号： C01B31/0446 ,  C01B32/192 ,  C01B32/22 ,  Y10S977/789

    摘要： The present invention relates to a method for preparing graphene using the two-dimensional confined space between the layers of inorganic layered materials. Such method comprises the following steps: mix a soluble salt of a divalent metal ion M2+, a soluble salt of a trivalent metal ion M′3+, a soluble salt of a chain alkyl anion A− and a carbon source molecule C and dissolve them in deionized and CO2-eliminated water to prepare a mixed salt solution; mix the mixed salt solution with an alkali solution under nitrogen protection and subject them to reaction and crystallization under nitrogen, and filter the suspension obtained thereafter and wash the filter cake with deionized water until the pH of the filtrate is 7 to 7.5, and then dry the filter cake to obtain layered double hydroxides with an intercalated structure; under an inert atmosphere or a reducing atmosphere, calcinate the layered double hydroxides with an intercalated structure to provide a calcinated product; add the calcinated product into a hydrochloric acid solution for ultrasonic treatment, and separate the solution by centrifugation and wash the precipitate obtained by centrifugation with deionized water until the pH of the filtrate is 6.5 to 7 to obtain the graphene.

    摘要翻译： 本发明涉及使用无机层状材料层之间的二维密闭空间来制备石墨烯的方法。 该方法包括以下步骤：将二价金属离子M2 +的可溶性盐，三价金属离子M'3 +的可溶性盐，链烷基阴离子A的可溶性盐和碳源分子C混合并溶解 在去离子水和二氧化碳消除的水中制备混合盐溶液; 在氮气保护下将混合盐溶液与碱溶液混合，并在氮气下进行反应和结晶，过滤后得到的悬浮液，用去离子水洗涤滤饼直到滤液的pH为7至7.5，然后干燥 滤饼得到具有插层结构的层状双氢氧化物; 在惰性气氛或还原气氛下，以层间结构煅烧层状双氢氧化物，得到煅烧产物; 将煅烧后的产物加入到盐酸溶液中进行超声波处理，离心分离溶液，用去离子水离心洗涤沉淀，直到滤液的pH值达到6.5〜7，得到石墨烯。

    Transient subscription records
    7.
    发明授权
    Transient subscription records 有权
    临时订阅记录

    公开(公告)号：US08838791B2

    公开(公告)日：2014-09-16

    申请号：US13035512

    申请日：2011-02-25

    申请人： Kevin Cutler ,  Xu Chen ,  Kalyan Siddam

    发明人： Kevin Cutler ,  Xu Chen ,  Kalyan Siddam

    IPC分类号： G06F15/173

    CPC分类号： H04M15/66 ,  H04L12/1407

    摘要： Various exemplary embodiments relate to a method and related network node including one or more of the following: receiving, at the session management node, an initial request message, the initial request message including at least one subscription identifier; determining that the session management node does not have access to a subscription record associated with the at least one subscription identifier; generating a transient subscription record based on the initial request message; and processing the initial request message based on the initial request message and the transient subscription record.

    摘要翻译： 各种示例性实施例涉及包括以下一个或多个的方法和相关网络节点：在会话管理节点处接收初始请求消息，初始请求消息包括至少一个订阅标识符; 确定所述会话管理节点不具有对与所述至少一个订阅标识符相关联的订阅记录的访问; 基于初始请求消息生成临时订阅记录; 以及基于所述初始请求消息和所述临时订阅记录来处理所述初始请求消息。

    MANUFACTURE METHOD OF SENSOR
    8.
    发明申请
    MANUFACTURE METHOD OF SENSOR 有权
    传感器的制造方法

    公开(公告)号：US20130143350A1

    公开(公告)日：2013-06-06

    申请号：US13704769

    申请日：2012-11-08

    申请人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

    发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18 ,  H01L27/14658 ,  H01L27/14692

    摘要： An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

    摘要翻译： 本发明的实施例公开了一种传感器的制造方法，包括：在基板上准备栅极扫描线; 在栅极扫描线上沉积栅极绝缘层; 依次沉积栅极绝缘薄膜，有源层薄膜，欧姆接触层薄膜，第一导电层薄膜和光电转换层薄膜，并且在沉积之后，将薄膜的层叠结构用 灰色蒙版板获得开关器件和光电传感器件; 然后顺序地制备第一钝化层，偏置线和第二钝化层。

    MANUFACTURING METHOD FOR A THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY
    10.
    发明申请
    MANUFACTURING METHOD FOR A THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY 有权
    薄膜晶体管液晶显示器的制造方法

    公开(公告)号：US20120034722A1

    公开(公告)日：2012-02-09

    申请号：US13273460

    申请日：2011-10-14

    申请人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

    发明人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

    IPC分类号： H01L33/16 ,  H01L21/336

    CPC分类号： H01L27/1288 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/1214

    摘要： A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.

    摘要翻译： 公开了一种TFT-LCD阵列基板的像素单元及其制造方法。 在该制造方法中，除了第一绝缘层和钝化层之外，还采用第二绝缘层覆盖栅极岛，并且在栅极岛上形成开口，以露出沟道区域，源极区域和漏极区域 TFT。 利用灰度色调掩模和光致抗蚀剂剥离工艺进行图案化，从而可以用三个掩模实现TFT-LCD阵列基板。