Facilitated Processing for Controlling Bonding Between Sheet and Carrier
    7.
    发明申请
    Facilitated Processing for Controlling Bonding Between Sheet and Carrier 有权
    用于控制片材和载体之间的粘合的便利处理

    公开(公告)号:US20150306847A1

    公开(公告)日:2015-10-29

    申请号:US14651720

    申请日:2013-12-13

    IPC分类号: B32B17/06 B32B3/04 B32B7/12

    摘要: A method of forming an article from a glass sheet (20) having a glass-sheet bonding surface (24) and a glass carrier (10) having a carrier bonding surface (14). At least one of the glass sheet and carrier bonding surfaces is coated with a surface modification layer (30), and then the glass sheet is connected with the carrier via the surface modification layer. From the perimeter of the glass sheet and the carrier while connected, there is removed a portion of the surface modification layer so as to expose a portion (19, 29) of the bonding surface on each of the glass sheet and the carrier. The glass sheet and carrier are then heated at a temperature ≧400° C. so as to bond the perimeter of the glass sheet (26) with the perimeter of the carrier (16).

    摘要翻译: 一种从具有玻璃板接合面(24)的玻璃板(20)和具有载体接合面(14)的玻璃载体(10)形成物品的方法。 玻璃板和载体接合面中的至少一个涂覆有表面改性层(30),然后玻璃板经由表面改性层与载体连接。 从连接的玻璃板和载体的周边起,除去一部分表面改性层,以便露出玻璃板和载体上的每一个上的接合表面的部分(19,29)。 然后将玻璃板和载体在≥400℃的温度下加热,以便将玻璃板(26)的周边与载体(16)的周边粘合。

    Method of exocasting an article of semiconducting material
    8.
    发明授权
    Method of exocasting an article of semiconducting material 有权
    分离半导体材料制品的方法

    公开(公告)号:US08591795B2

    公开(公告)日:2013-11-26

    申请号:US12631054

    申请日:2009-12-04

    IPC分类号: C30B28/04

    摘要: A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.

    摘要翻译: 制造半导体材料制品的方法包括选择制品的目标厚度,然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层,其中 固体层的厚度基本上等于目标厚度。 浸入时间被选择为基本上等于转变时间,其从具有特定属性的模具的实心层厚度对浸没时间的图确定,包括模具成分,模具厚度和初始模具温度。 过渡时间,从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。