公开(公告)号：US5037626A

公开(公告)日：1991-08-06

申请号：US275329

申请日：1988-11-22

申请人： Phillman N. Ho ,  Roy T. Coyle

发明人： Phillman N. Ho ,  Roy T. Coyle

IPC分类号： C01B31/36 ,  C30B25/00 ,  C30B29/36 ,  C30B29/62

CPC分类号： C30B25/005 ,  C30B29/36

摘要： A processing for producing silicon carbide whiskers in which a source of silica is mixed with a residual oil or crude petroleum and the resultant mixture is heated in a substantially nonoxidizing atmosphere at temperature sufficiently high to carbonize the residual oil or crude petroleum, thereby forming an intimate mixture of carbon and silica. The intimate mixture is then heated in a nonoxidizing atmosphere in the presence of a seeding component comprising an element selected from the group consisting of boron, the rare earths, Group IA, Group IB, Group VB, Group VIB, Group VIIB and Group VIII of the Periodic Table of Elements at temperatures sufficiently high to induce the reaction between carbon and silica to form silicon carbide. The resultant silicon carbide product will contain a relatively high concentration of silicon carbide whiskers.

公开(公告)号：US4839150A

公开(公告)日：1989-06-13

申请号：US50157

申请日：1987-05-15

申请人： Roy T. Coyle ,  Phillman N. Ho

发明人： Roy T. Coyle ,  Phillman N. Ho

IPC分类号： C01B31/36 ,  C30B25/00

CPC分类号： C01B31/36 ,  C30B25/005 ,  C30B29/36 ,  C01P2002/88 ,  C01P2004/10 ,  C01P2004/50 ,  C01P2004/62 ,  C01P2006/12 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/90 ,  Y10S977/949

摘要： Silicon carbide is produced by a method which includes dipsersing silica in a residual oil, carbonizing the oil at elevated temperatures, and heating the carbonized dispersion to form silicon carbide. Preferably, the silica is an amorphous type. Preferred residual oils are produced by distilling away crude petroleum components at temperatures up to about 350.degree. C. The silicon carbide product typically contains a mixture of powder and whisker configurations, and has many particles with a dimension less than about 1 micrometer.

公开(公告)号：US4963286A

公开(公告)日：1990-10-16

申请号：US286271

申请日：1988-12-19

申请人： Roy T. Coyle ,  Phillman N. Ho

发明人： Roy T. Coyle ,  Phillman N. Ho

IPC分类号： C01B31/36 ,  C30B25/00

CPC分类号： C01B31/36 ,  C30B25/005 ,  C30B29/36 ,  C01P2002/88 ,  C01P2004/10 ,  C01P2004/50 ,  C01P2004/62 ,  C01P2006/12 ,  Y10S977/776 ,  Y10S977/895 ,  Y10S977/949 ,  Y10T428/12104 ,  Y10T428/30

摘要： Silicon carbide is produced by a method which includes dispersing silica in a residual oil, carbonizing the oil at elevated temperatures, and heating the carbonized dispersion to form silicon carbide. Preferably, the silica is an amorphous type. Preferred residual oils are produced by distilling away crude petroleum components at temperatures up to about 350.degree. C. The silicon carbide product typically contains a mixture of powder and whisker configurations, and has many particles with a dimension less than about 1 micrometer.

摘要翻译： 通过包括将二氧化硅分散在残余油中，在升高的温度下对油进行碳化并加热碳化分散体以形成碳化硅的方法来生产碳化硅。 优选地，二氧化硅是非晶型的。 优选的残油通过在高达约350℃的温度下蒸馏出粗石油组分来生产。碳化硅产品通常包含粉末和晶须构型的混合物，并且具有许多尺寸小于约1微米的颗粒。

公开(公告)号：US5221526A

公开(公告)日：1993-06-22

申请号：US705089

申请日：1991-05-24

申请人： Dongxin Qi ,  Roy T. Coyle ,  Richard D. Tait ,  Rick J. Orth

发明人： Dongxin Qi ,  Roy T. Coyle ,  Richard D. Tait ,  Rick J. Orth

IPC分类号： C30B25/00

CPC分类号： C30B25/005 ,  C30B29/36

摘要： A process for producing silicon carbide whiskers in which a particulate form of carbon is combined with a silicon component, a boron component and seeding component to form a mixture which is then subjected to temperatures above about 1300.degree. C. in a nonoxidizing atmosphere such that carbon reacts with silica to form silicon carbide whiskers. The preferred particulate carbon, silicon component, boron component and seeding component are, respectively, carbon black, fumed silica, boron oxide and cobalt, iron or nickel. The size and shape of the whiskers can be controlled by varying the size of the seeding component and the concentration of the boron component.

摘要翻译： 一种生产碳化硅晶须的方法，其中颗粒形式的碳与硅组分，硼组分和接种组分组合以形成混合物，然后将其在非氧化气氛中经受约1300℃以上的温度，使得碳 与二氧化硅反应形成碳化硅晶须。 优选的颗粒状碳，硅组分，硼组分和接种组分分别为炭黑，热解法二氧化硅，氧化硼和钴，铁或镍。 可以通过改变接种组分的尺寸和硼组分的浓度来控制晶须的尺寸和形状。