公开(公告)号：US08772788B2

公开(公告)日：2014-07-08

申请号：US14122823

申请日：2012-04-23

申请人： Ryo Ikegami ,  Masao Uchida ,  Yuki Tomita ,  Masahiko Niwayama

发明人： Ryo Ikegami ,  Masao Uchida ,  Yuki Tomita ,  Masahiko Niwayama

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L21/8213 ,  H01L21/823412 ,  H01L21/823487 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7828

摘要： A semiconductor device disclosed in the present application includes: a semiconductor substrate; a first silicon carbide semiconductor layer located on a principal surface of the semiconductor substrate, the first silicon carbide semiconductor layer including a drift region of a first conductivity type, a body region of a second conductivity type, and an impurity region of a first conductivity type; a trench provided in the first silicon carbide semiconductor layer so as to reach inside of the drift region; a second silicon carbide semiconductor layer of the first conductivity type located at least on a side surface of the trench so as to be in contact with the impurity region and the drift region; a gate insulating film; a gate electrode; a first ohmic electrode; and a second ohmic electrode. The body region includes a first body region which is in contact with the second silicon carbide semiconductor layer on the side surface of the trench, and a second body region which is in contact with the drift region and has a smaller average impurity concentration than the first body region.

摘要翻译： 本申请中公开的半导体器件包括：半导体衬底; 位于所述半导体衬底的主表面上的第一碳化硅半导体层，所述第一碳化硅半导体层包括第一导电类型的漂移区，第二导电类型的体区和第一导电类型的杂质区 ; 设置在所述第一碳化硅半导体层中以便到达所述漂移区域内部的沟槽; 所述第一导电类型的第二碳化硅半导体层至少位于所述沟槽的侧表面上以与所述杂质区域和所述漂移区域接触; 栅极绝缘膜; 栅电极; 第一欧姆电极; 和第二欧姆电极。 主体区域包括与沟槽侧表面上的第二碳化硅半导体层接触的第一体区域和与漂移区域接触并且具有比第一区域更小的平均杂质浓度的第二体区域 身体区域。

公开(公告)号：US20130082285A1

公开(公告)日：2013-04-04

申请号：US13701016

申请日：2011-08-29

申请人： Chiaki Kudou ,  Masahiko Niwayama ,  Ryo Ikegami

发明人： Chiaki Kudou ,  Masahiko Niwayama ,  Ryo Ikegami

IPC分类号： H01L29/16

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/45 ,  H01L29/4933 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7828

摘要： A semiconductor device according to the present invention includes a contact region 201 of a second conductivity type which is provided in a body region 104. The contact region 201 includes a first region 201a in contact with a first ohmic electrode 122 and a second region 201b located at a position deeper than that of the first region 201a and in contact with the body region 104. The first region 201a and the second region 201b each have at least one peak of impurity concentration. The peak of impurity concentration in the first region 201a has a higher value than that of the peak of impurity concentration in the second region 201b.

摘要翻译： 根据本发明的半导体器件包括设置在体区104中的第二导电类型的接触区域201.接触区域201包括与第一欧姆电极122接触的第一区域201a和位于第二区域201b的第二区域201b 在比第一区域201a更深的位置处并且与主体区域104接触。第一区域201a和第二区域201b各自具有至少一个杂质浓度峰。 第一区域201a中的杂质浓度的峰值比第二区域201b中的杂质浓度的峰值高。

公开(公告)号：US08653535B2

公开(公告)日：2014-02-18

申请号：US13701016

申请日：2011-08-29

申请人： Chiaki Kudou ,  Masahiko Niwayama ,  Ryo Ikegami

发明人： Chiaki Kudou ,  Masahiko Niwayama ,  Ryo Ikegami

IPC分类号： H01L29/15

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/45 ,  H01L29/4933 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7828

摘要： A semiconductor device according to the present invention includes a contact region 201 of a second conductivity type which is provided in a body region 104. The contact region 201 includes a first region 201a in contact with a first ohmic electrode 122 and a second region 201b located at a position deeper than that of the first region 201a and in contact with the body region 104. The first region 201a and the second region 201b each have at least one peak of impurity concentration. The peak of impurity concentration in the first region 201a has a higher value than that of the peak of impurity concentration in the second region 201b.

摘要翻译： 根据本发明的半导体器件包括设置在体区104中的第二导电类型的接触区域201.接触区域201包括与第一欧姆电极122接触的第一区域201a和位于第二区域201b的第二区域201b 在比第一区域201a更深的位置处并且与主体区域104接触。第一区域201a和第二区域201b各自具有至少一个杂质浓度峰。 第一区域201a中的杂质浓度的峰值比第二区域201b中的杂质浓度的峰值高。

公开(公告)号：US08408604B2

公开(公告)日：2013-04-02

申请号：US13340845

申请日：2011-12-30

申请人： Hiroshi Yamada ,  Kazushige Sakazaki ,  Takahiro Shibata ,  Ryo Ikegami ,  Hisashi Terayama

发明人： Hiroshi Yamada ,  Kazushige Sakazaki ,  Takahiro Shibata ,  Ryo Ikegami ,  Hisashi Terayama

IPC分类号： F16L39/00

CPC分类号： F16L37/133 ,  F16L37/088 ,  F16L37/0985 ,  F16L37/144 ,  F16L2201/10 ,  F16L2201/20

摘要： A quick connector capable of surely confirming that a pipe body is engaged by a retainer when an elastically-deformable claw of the retainer and an elastically-deformable claw of a checker are adjacently arranged in an axial direction. Checker-axis direction elastically-deformable claws have distal-end sides formed flexibly deformable in the axial direction, maintain a state of being engaged by a second engagement portion of a retainer body by having deflective deformation regulated by a retainer diameter-expanding elastically-deformable claw in a state in which the retainer diameter-expanding elastically-deformable claw is expanded diametrically, and regulate sliding from a first position with respect to the retainer body toward a set radial direction by being engaged by the second engagement portion of the retainer body.

摘要翻译： 当保持器的可弹性变形的爪和校验器的可弹性变形的爪在轴向方向上相邻布置时，能够可靠地确认管体与保持器接合的快速连接器。 检查轴方向的可弹性变形爪具有在轴向方向上可挠曲地变形的远端侧，通过具有由保持器直径扩张弹性变形的挠曲变形保持与保持体的第二接合部接合的状态 爪处于保持器直径膨胀弹性变形爪沿径向扩径的状态，并且通过与保持器主体的第二接合部接合而将相对于保持器主体的第一位置的滑动调节到设定的径向。